2004 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 175C
100
V
V
DGR
T
J
= 25
C to 175C; R
GS
= 1 M
100
V
V
GSM
20
V
I
D25
T
C
= 25
C
170
A
I
D(RMS)
External lead current limit
75
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
350
A
I
AR
T
C
= 25
C
60
A
E
AR
T
C
= 25
C
80
mJ
E
AS
T
C
= 25
C
2.0
J
dv/dt
I
S
I
DM
, di/dt
100 A/s, V
DD
V
DSS
,
10
V/ns
T
J
150C, R
G
= 4
P
D
T
C
= 25
C
714
W
T
J
-55 ... +175
C
T
JM
175
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
M
d
Mounting torque
(TO-3P)
1.13/10 Nm/lb.in.
Weight
TO-3P
5.5
g
TO-264
10
g
TO-268
5.0
g
G = Gate
D = Drain
S = Source
TAB = Drain
DS99176A(11/04)
PolarHT
TM
Power MOSFET
IXTQ 170N10P V
DSS
= 100 V
IXTT 170N10P I
D25
= 170 A
IXTK 170N10P
R
DS(on)
= 9.0 m
N-Channel Enhancement Mode
Features
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
TO-3P (IXTQ)
G
D
S
(TAB)
TO-268 (IXTT)
G
S
D (TAB)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min. Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
= 250
A
100
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
2.5
5.0
V
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
DSS
25
A
V
GS
= 0 V
T
J
= 125
C
250
A
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
9.0
m
V
GS
= 15 V, I
D
= 350A
7.0
m
Pulse test, t
300 s, duty cycle d 2 %
Preliminary Data Sheet
S
G
D
(TAB)
TO-264 (IXTK)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
Symbol
Test Conditions Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
50
72
S
C
iss
6000
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
2340
pF
C
rss
730
pF
t
d(on)
35
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 60 A
50
ns
t
d(off)
R
G
= 3.3
(External)
90
ns
t
f
33
ns
Q
g(on)
198
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
39
nC
Q
gd
107
nC
R
thJC
0.21 K/W
R
thCK
(TO-3P)
0.21
K/W
(TO-264)
0.15
K/W
Source-Drain Diode Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
Min.
typ.
Max.
I
S
V
GS
= 0 V
170
A
I
SM
Repetitive
350
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300 s, duty cycle d 2 %
t
rr
I
F
= 25 A
120
ns
-di/dt = 100 A/
s
Q
RM
V
R
= 50 V
2.0
C
IXTK 170N10P IXTQ 170N10P
IXTT 170N10P
TO-268 Outline
TO-3P (IXTQ) Outline
TO-264 Outline
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.82
5.13
.190
.202
A1
2.54
2.89
.100
.114
A2
2.00
2.10
.079
.083
b
1.12
1.42
.044
.056
b1
2.39
2.69
.094
.106
b2
2.90
3.09
.114
.122
c
0.53
0.83
.021
.033
D
25.91
26.16
1.020
1.030
E
19.81
19.96
.780
.786
e
5.46 BSC
.215 BSC
J
0.00
0.25
.000
.010
K
0.00
0.25
.000
.010
L
20.32
20.83
.800
.820
L1
2.29
2.59
.090
.102
P
3.17
3.66
.125
.144
Q
6.07
6.27
.239
.247
Q1
8.38
8.69
.330
.342
R
3.81
4.32
.150
.170
R1
1.78
2.29
.070
.090
S
6.04
6.30
.238
.248
T
1.57
1.83
.062
.072
Dim.
2004 IXYS All rights reserved
Fig. 2. Extended Output Characteristics
@ 25
C
0
40
80
120
160
200
240
280
320
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
7V
6V
8V
9V
Fig. 3. Output Characteristics
@ 150
C
0
20
40
60
80
100
120
140
160
180
0
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
9V
5V
6V
7V
8V
Fig. 1. Output Characteristics
@ 25
C
0
20
40
60
80
100
120
140
160
180
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
9V
7V
6V
8V
Fig. 4. R
DS(on
)
Norm alized to 0.5 I
D25
Value vs. Junction Tem perature
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
-50
-25
0
25
50
75
100
125
150
175
T
J
- Degrees Centigrade
R
D
S
(
o n )
-
N
o
rm
a
l
i
z
e
d
I
D
= 170A
I
D
= 85A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Tem perature
0
10
20
30
40
50
60
70
80
90
-50
-25
0
25
50
75
100
125
150
175
T
C
- Degrees Centigrade
I
D
-
A
m
per
es
External Lead Current Limit
Fig. 5. R
DS(on)
Norm alized to 0.5 I
D25
Value vs. Drain Current
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
2.75
0
50
100
150
200
250
300
350
I
D
- Amperes
R
D
S
(
o n )
-
N
o
rm
a
l
i
z
e
d
T
J
= 25
C
V
GS
= 10V
T
J
= 175
C
V
GS
= 15V
IXTK 170N10P IXTQ 170N10P
IXTT 170N10P
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
Fig. 11. Capacitance
100
1000
10000
100000
0
5
10
15
20
25
30
35
40
V
DS
- Volts
Capac
i
t
anc
e -
pi
c
o
F
a
r
ads
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0
20
40
60
80
100 120 140 160 180 200
Q
G
- nanoCoulombs
V
G S
-
V
o
l
t
s
V
DS
= 50V
I
D
= 85A
I
G
= 10mA
Fig. 7. Input Adm ittance
0
30
60
90
120
150
180
210
240
270
300
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5
V
G S
- Volts
I
D
-
A
m
per
es
T
J
= 150
C
25
C
-40
C
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
100
110
0
40
80
120
160
200
240
280
320
I
D
- Amperes
g
f s
-
S
i
em
ens
T
J
= -40
C
25
C
150
C
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
50
100
150
200
250
300
350
0.4
0.6
0.8
1
1.2
1.4
1.6
V
S D
- Volts
I
S
-
A
m
per
es
T
J
= 150
C
T
J
= 25
C
Fig. 12. Forw ard-Bias
Safe Operating Area
10
100
1000
1
10
100
1000
V
D S
- Volts
I
D
-
A
m
per
es
100s
1ms
DC
T
J
= 175
C
T
C
= 25
C
R
DS(on)
Limit
10ms
IXTK 170N10P IXTQ 170N10P
IXTT 170N10P
2004 IXYS All rights reserved
F ig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e
0 . 0 1
0 . 1 0
1 . 0 0
0 . 1
1
1 0
1 0 0
1 0 0 0
Pu ls e W id th - m illis e c o n d s
R
( t h ) J
C
-
C
/ W
IXTK 170N10P IXTQ 170N10P
IXTT 170N10P
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