2004 IXYS All rights reserved
G = Gate
D = Drain
S = Source
TAB = Drain
DS99115A(10/04)
PolarHT
TM
Power MOSFET
IXTQ52N30P
V
DSS
= 300 V
IXTT52N30P
I
D25
= 52 A
R
DS(on)
= 66 m
Advanced Technical Information
N-Channel Enhancement Mode
Features
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
TO-268 (IXTT)
G
S
D (TAB)
TO-3P (IXTQ)
G
C
E
(TAB)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min. Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
= 250
A
300
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
A
2.5
5.0
V
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
DSS
25
A
V
GS
= 0 V
T
J
= 125
C
250
A
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
57
66
m
Pulse test, t
300 s, duty cycle d 2 %
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150C
300
V
V
DGR
T
J
= 25
C to 150C; R
GS
= 1 M
300
V
V
GSS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C
52
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
150
A
I
AR
T
C
= 25
C
52
A
E
AR
T
C
= 25
C
30
mJ
E
AS
T
C
= 25
C
1.0
J
dv/dt
I
S
I
DM
, di/dt
100 A/s, V
DD
V
DSS
,
10
V/ns
T
J
150C, R
G
= 4
P
D
T
C
= 25
C
400
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
C
M
d
Mounting torque
(TO-3P)
1.13/10 Nm/lb.in.
Weight
TO-3P
5.5
g
TO-268
5.0
g
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTQ 52N30P
IXTT 52N30P
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min.
Typ. Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
20
30
S
C
iss
3490
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
550
pF
C
rss
130
pF
t
d(on)
24
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
D25
22
ns
t
d(off)
R
G
= 4
(External)
60
ns
t
f
20
ns
Q
g(on)
110
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
25
nC
Q
gd
53
nC
R
thJC
0.31
K/W
R
thCK
(TO-3P)
0.21
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
52
A
I
SM
Repetitive
150
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300 s, duty cycle d 2 %
T
rr
I
F
= 25A
-di/dt = 100 A/
s
V
R
= 100V
Q
RM
250
3.0
ns
C
TO-268 Outline
TO-3P (IXTQ) Outline
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
2004 IXYS All rights reserved
IXTQ 52N30P
IXTT 52N30P
Fig. 2. Extended Output Characteristics
@ 25 deg. C
0
25
50
75
100
125
150
0
5
10
15
20
25
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
9V
5V
6V
7V
8V
Fig. 3. Output Characteristics
@ 125 Deg. C
0
5
10
15
20
25
30
35
40
45
50
55
0
1
2
3
4
5
6
7
8
9
10
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
8V
7V
5V
6V
Fig. 1. Output Characteristics
@ 25 Deg. C
0
5
10
15
20
25
30
35
40
45
50
55
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
8V
5V
6V
7V
Fig. 4. R
DS(on)
Norm alized to I
D25
Value vs.
Junction Tem perature
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
R
D S
(
o
n
)
- N
o
rm
a
l
i
z
e
d
I
D
= 52A
I
D
= 26A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Tem perature
0
5
10
15
20
25
30
35
40
45
50
55
-50
-25
0
25
50
75
100
125
150
T
C
- Degrees Centigrade
I
D
- A
m
p
e
r
e
s
Fig. 5. R
DS(on)
Norm alized to I
D25
Value vs. I
D
0.6
1
1.4
1.8
2.2
2.6
3
3.4
3.8
0
25
50
75
100
125
150
I
D
- Amperes
R
D
S
(
on)
- N
o
rm
a
l
i
z
e
d
T
J
= 125C
T
J
= 25C
V
GS
= 10V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTQ 52N30P
IXTT 52N30P
Fig. 11. Capacitance
100
1000
10000
0
5
10
15
20
25
30
35
40
V
D S
- Volts
Cap
a
c
i
t
a
nc
e -
p
F
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0
20
40
60
80
100
120
Q
G
- nanoCoulombs
V
G S
-
V
o
l
t
s
V
DS
= 150V
I
D
= 26A
I
G
= 10mA
Fig. 7. Input Adm ittance
0
10
20
30
40
50
60
70
80
90
100
4
4.5
5
5.5
6
6.5
7
7.5
8
V
G S
- Volts
I
D
- A
m
p
e
re
s
T
J
= 125C
25C
-40C
Fig. 8. Transconductance
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
80
90
100
I
D
- Amperes
g
f s
-
S
i
em
en
s
T
J
= -40C
25C
125C
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
25
50
75
100
125
150
0.4
0.6
0.8
1
1.2
1.4
V
S D
- Volts
I
S
- A
m
p
e
r
e
s
T
J
= 125C
T
J
= 25C
Fig. 12. Forw ard-Bias Safe
Operating Area
1
10
100
1000
10
100
1000
V
D S
- Volts
I
D
- A
m
p
e
re
s
25s
1ms
DC
T
C
= 25C
R
DS
(on)
Limit
10ms
2004 IXYS All rights reserved
IXTQ 52N30P
IXTT 52N30P
Fig. 13. Maximum Transient Therm al Resistance
0.01
0.10
1.00
1
10
100
1000
Pulse Width - milliseconds
R
(t
h
)
J
C
-
(C/W)
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