2002 IXYS All rights reserved
1 - 2
I
RMS
= 175 A
V
RRM
= 800-1600 V
V
RSM
V
RRM
Type
V
DSM
V
DRM
V
V
800
800
MMO 175-08io7
MLO 175-08io7
1200
1200
MMO 175-12io7
MLO 175-12io7
1600
1600
MMO 175-16io7
MLO 175-16io7
Features
Thyristor controller for AC (circuit
W1C acc. to IEC) for mains frequency
Isolation voltage 3000 V~
Planar glass passivated chips
Low forward voltage drop
Lead suitable for PC board solering
Applications
Switching and control of single and
three phase AC circuits
Light and temperature control
Softstart AC motor controller
Solid state switches
Advantages
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling
High power density
Small and light weight
MMO 175
MLO
175
Symbol
Conditions
Maximum Ratings
I
RMS
T
C
= 85C, 50 - 400 Hz, (per single controller)
175
A
I
TRMS
125
A
I
TAVM
T
C
= 85C; 180 sine
80
A
I
TSM
T
VJ
= 45C
t = 10 ms (50 Hz), sine
1500
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
1600
A
T
VJ
= 125C
t = 10 ms (50 Hz), sine
1350
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
1450
A
I
2
t
T
VJ
= 45C
t = 10 ms (50 Hz), sine
11200
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
10750
A
2
s
T
VJ
= 125C
t = 10 ms (50 Hz), sine
9100
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
8830
A
2
s
(di/dt)
cr
T
VJ
= 125C
repetitive, I
T
= 80 A
150
A/s
f = 50 Hz, t
P
= 200 s
V
D
=
2
/
3
V
DRM
I
G
= 0.45 A
non repetitive, I
T
= I
TAVM
500
A/s
di
G
/dt = 0.45 A/s
(dv/dt)
cr
T
VJ
= 125C; V
DR
=
2
/
3
V
DRM
1000
V/s
R
GK
=
; method 1 (linear voltage rise)
P
GM
T
VJ
= 125C
t
p
= 30 s
10
W
I
T
= I
TAVM
t
p
= 300 s
5
W
P
GAVM
0.5
W
V
RGM
10
V
T
VJ
-40...+150
C
T
VJM
150
C
T
stg
-40...+125
C
V
ISOL
50/60 Hz, RMS
t = 1 min
2500
V~
I
ISOL
1 mA
t = 1 s
3000
V~
M
d
Mounting torque (M4)
1.5...2.0/14...18 Nm/lb.in.
Weight
typ.
18
g
Data according to IEC 60747 and to a single thyristor/diode unless otherwise stated.
AC Controller Modules
Preliminary Data
241
I / H
G / F
G / F
I / H
A
N
MMO
(W1C)
MLO
(W1H)
A
2002 IXYS All rights reserved
2 - 2
Symbol
Conditions
Characteristic Values
I
D
, I
R
T
VJ
= 125C; V
R
= V
RRM
; V
D
= V
DRM
5
mA
V
T
I
T
= 200 A; T
VJ
= 25C
1.57
V
V
T0
For power-loss calculations only
0.85
V
r
T
3.7
m
V
GT
V
D
= 6 V
T
VJ
= 25C
1.5
V
T
VJ
= -40C
1.6
V
I
GT
V
D
= 6 V
T
VJ
= 25C
100
mA
T
VJ
= -40C
200
mA
V
GD
T
VJ
= 125C; V
D
=
2
/
3
V
DRM
0.2
V
I
GD
10
mA
I
L
T
VJ
= 25C; t
P
= 10 s
450
mA
I
G
= 0.45 A; di
G
/dt = 0.45 A/s
I
H
T
VJ
= 25C; V
D
= 6 V; R
GK
=
200
mA
t
gd
T
VJ
= 25C; V
D
= V
DRM
2
s
I
G
= 0.45 A; di
G
/dt = 0.45 A/s
R
thJC
per thyristor; DC
0.5
K/W
per module
0.25
K/W
R
thCH
per thyristor; sine 180 el
typ.
0.12
K/W
per module
typ.
0.06
K/W
d
S
Creeping distance on surface
11.2
mm
d
A
Creepage distance in air
17.0
mm
a
Max. allowable acceleration
50
m/s
2
MMO 175
MLO
175
10
100
1000
1
10
100
1000
10
0
10
1
10
2
10
3
10
4
0.1
1
10
I
G
V
G
mA
mA
I
G
1: I
GT
, T
VJ
= 125
C
2: I
GT
, T
VJ
= 25
C
3: I
GT
, T
VJ
= -40
C
s
t
gd
V
4: P
GAV
= 0.5 W
5: P
GM
= 5 W
6: P
GM
= 10 W
I
GD
, T
VJ
= 125
C
3
4
2
1
5
6
Limit
typ.
T
VJ
= 25
C
Fig. 1 Gate trigger characteristics
Fig. 2 Gate trigger delay time
Dimensions in mm (1 mm = 0.0394")
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