2000 IXYS All rights reserved
1 - 4
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions.
V
RRM
Type
V
1200
VUB 60-12 NO1
1600
VUB 60-16 NO1
IGBT
Fast Recovery Diode
Module
Rectifier Diodes
Symbol
Test Conditions
Maximum Ratings
V
RRM
1200 / 1600
V
I
dAV
T
H
= 110
C, sinusoidal 120
59
A
I
dAVM
limited by leads
70
A
I
FSM
T
VJ
= 45
C, t = 10 ms, V
R
= 0 V
530
A
T
VJ
= 150
C, t = 10 ms, V
R
= 0 V
475
A
I
2
t
T
VJ
= 45
C, t = 10 ms, V
R
= 0 V
1400
A
T
VJ
= 150
C, t = 10 ms, V
R
= 0V
1130
A
P
tot
T
H
= 80
C per diode
49
W
-
V
CES
T
VJ
= 25
C to 150
C
1200
V
V
GE
Continuous
20
V
I
C25
T
H
= 25
C, DC
31
A
I
C70
T
H
= 70
C, DC
23
A
I
C80
T
H
= 80
C, DC
21
A
I
CM
t
p
= Pulse width limited by T
VJM
62
A
P
tot
T
H
= 80
C
70
W
V
RRM
1200
V
I
FAV
T
H
= 80
C, rectangular d = 0.5
8
A
I
FRMS
T
H
= 80
C, rectangular d = 0.5
12
A
I
FRM
T
H
= 80
C, t
P
= 10 s, f = 5 kHz
90
A
I
FSM
T
VJ
= 45
C, t = 10 ms
75
A
T
VJ
= 150
C, t = 10 ms
60
A
P
tot
T
H
= 80
C
22
W
T
VJ
-40...+150
C
T
VJM
150
C
T
stg
-40...+125
C
V
ISOL
50/60 Hz
t = 1 min
3000
V~
I
ISOL
1 mA
t = 1 s
3600
V~
M
d
Mounting torque
(M5)
2-2.5
Nm
(10-32 unf)
18-22
lb.in.
Weight
typ.
35
g
Features
q
Soldering connections for PCB
mounting
q
Isolation voltage 3600 V~
q
Ultrafast freewheel diode
q
Convenient package outline
q
UL registered E 72873
q
Thermistor
Applications
q
Drive Inverters with brake system
Advantages
q
2 functions in one package
q
No external isolation
q
Easy to mount with two screws
q
Suitable for wave soldering
q
High temperature and power cycling
capability
Dimensions in mm (1 mm = 0.0394")
VUB 60
V
RRM
= 1200-1600 V
I
dAVM
= 70 A
Three Phase Rectifier Bridge
with IGBT and Fast Recovery Diode
for Braking System
1 2
4 5
6
7
9 10
2000 IXYS All rights reserved
2 - 4
VUB 60
I
R
V
R
= V
RRM
,
T
VJ
= 25
C
0.2
mA
V
R
= 800 V, T
VJ
=150
C
6
mA
V
F
I
F
= 12 A,
T
VJ
= 25
C
2.7
V
V
T0
For power-loss calculations only
1.65
V
r
T
T
VJ
= 150
C
46
m
W
I
RM
I
F
= 25 A,
-di
F
/dt = 100 A/
m
s
6.5
7
A
V
R
= 100 V
t
rr
I
F
= 1 A,
-di
F
/dt = 100 A/
m
s
50
70
ns
V
R
= 30 V
R
thJH
3.12 K/W
R
25
Siemens Typ S 891/2,2k/+9
2.2
k
W
d
S
Creep distance on surface
12.7 mm
d
A
Strike distance in air
9.4 mm
a
Maximum allowable acceleration
50 m/s
2
Symbol
Test Conditions
Characteristic Values
(T
VJ
= 25
C, unless otherwise specified)
min.
typ.
max.
Rectifier Diodes
V
BR(CES)
V
GS
= 0 V, I
C
= 3 mA
1200
V
V
GE(th)
I
C
= 10 mA
5
7.5
V
I
GES
V
GE
=
20 V
500
nA
I
CES
T
VJ
=
25
C,
V
CE
= 800 V
250
m
A
T
VJ
=
125
C, V
CE
= 800 V
1
mA
V
CEsat
V
GE
= 15 V, I
C
= 25 A
3.5
V
t
SC
V
GE
= 15 V, V
CE
= 600 V, T
VJ
=
125
C,
10
m
s
(SCSOA)
R
G
= 4.7
W
, non repetitive
RBSOA
V
GE
= 15 V, V
CE
= 800 V, T
VJ
=
125
C,
50
A
R
G
= 4.7
W
, Clamped Inductive load, L = 100
m
H
C
ies
V
CE
= 25 V, f = 1 MHz, V
GE
= 0 V
2.85
nF
t
d(on)
100
ns
t
d(off)
220
ns
t
fi
1600
ns
E
on
3.5
mJ
E
off
12
mJ
R
thJH
1 K/W
I
R
V
R
= V
RRM
,
T
VJ
= 25
C
0.1
mA
V
R
= V
RRM
,
T
VJ
= 150
C
3
mA
V
F
I
F
= 25 A,
T
VJ
= 25
C
1.3
V
V
T0
For power-loss calculations only
0.85
V
r
T
T
VJ
= 150
C
8.5
m
W
R
thJH
per diode
1.42 K/W
Rectifier Diodes
1
10
10
100
1000
10000
0.0
0.5
1.0
1.5
2.0
0
10
20
30
40
50
60
70
80
V
F
A
I
F
0.001
0.01
0.1
1
0
100
200
300
400
500
V
s
t
V
R
= 0.8V
RRM
T
VJ
= 45
C
T
VJ
= 150
C
I
2
t
A
2
s
A
I
FSM
ms
t
V
R
= 0 V
T
VJ
= 25
C
T
VJ
=150C
max.
T
VJ
= 150
C
T
VJ
= 45
C
typ.
Fig. 3 I
2
t versus time per rectifier diode
Fig. 2 Surge overload current per
rectifier diode
Fig. 1 Forward current versus voltage
drop per rectifier diode
Fast Recovery Diode
V
CE
= 600 V, I
C
= 25 A
V
GE
= 15 V, R
G
= 4.7
W
Inductive load; L = 100
m
H
T
VJ
=
125
C
IGBT
Module
NTC
2000 IXYS All rights reserved
3 - 4
VUB 60
R
G
0
20
40
60
80
100
0.9
1.0
1.1
1.2
1.3
0
40
80
120
160
0
10
20
30
40
50
60
70
80
I
C
0.0001
0.001
0.01
0.1
1
10
0
10
20
30
40
50
60
70
0
10
20
30
40
50
0.0
0.5
1.0
1.5
2.0
-50 -25
0
25 50 75 100 125 150
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
0
2
4
6
8
10
12
14
0
20
40
60
80
100
W
I
C
norm.
V
A
T
H
I
d(AV)M
C
V
CE(sat)
T
VJ
I
C
V
CE
A
0
10
20
30
40
50
60
70
0
20
40
60
80
100
120
140
P
tot
I
d(AV)M
A
W
T
A
V
GE
= 15V
T
VJ
= 25C
I
C
= 50A
E
off
t
fi
s
T
VJ
=125
C
I
C
= 25A
norm. to 4.7
W
0
40
80
120
160
C
R
thHA
[K/W]
0.5
1
1.5
2
3
4
6
V
GE
= 13V
V
GE
= 11V
V
GE
= 9V
A
D=0.1
D=0.3
D=0.2
D=0.7
D=0.4
C
I
C
= 25A
I
C
= 12.5A
E
off
t
fi
A
norm.
E
off
t
fi
E
off
t
fi
t
p
T
V
J
=125
C
R
G
= 4.7
W
norm.
V
GE
= 15V
T
H
= 80
C
D=0.5
Fig. 6 Output characteristics for
Fig. 7 Saturation voltage versus
Fig. 8 Turn-off energy per pulse and
braking (IGBT)
junction temperature
fall time versus collector
normalized (IGBT)
current, normalized (IGBT)
Fig. 9 Collector current versus pulse width and duty cycle (IGBT)
Fig.10 Turn-off energy per pulse and
fall time versus R
G
(IGBT)
T
H
Fig. 4 Power dissipation versus direct output current and ambient temperature
Fig. 5 Maximum forward current
(Rectifier bridge)
versus heatsink temperature
(Rectifier bridge)
2000 IXYS All rights reserved
4 - 4
VUB 60
1
10
100
1000
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
0
5
10
15
20
25
30
35
40
-di
F
/dt
0.001
0.01
0.1
1
10
100
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
100
200
300
400
0
5
10
15
20
25
30
0
100
200
300
400
0.0
0.2
0.4
0.6
0.8
1.0
0
40
80
120
160
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
400
800
1200
0.1
1
10
100
K
f
Z
thJH
K/W
t
-di
F
/dt
T
VJ
C
t
rr
m
s
0
100
200
300
400
500
0
20
40
60
80
100
0
1
2
3
4
5
V
FR
m
C
V
CE
I
C
A
V
F
I
F
I
RM
A
Q
R
V
A/
m
s
V
per Rectifier
Diode
Fast Diode
IGBT
I
F
= 11 A
I
F
= 22 A
I
F
= 11 A
I
F
= 5.5 A
V
-di
F
/dt
A/
m
s
s
V
FR
t
FR
t
FR
m
s
Q
rr
T
V
J
=100
C
V
R
= 540 V
T
V
J
=125
C
R
G
=4.7
W
A
max.
I
RM
I
F
= 11 A
I
F
= 22 A
I
F
= 11 A
I
F
= 5.5 A
T
V
J
=100
C
V
R
= 540 V
A/
m
s
-di
F
/dt
typ.
max.
I
F
= 11 A
I
F
= 22 A
I
F
= 11 A
I
F
= 5.5 A
T
V
J
=100
C
V
R
= 540 V
A/
m
s
T
V
J
=150
C
T
V
J
=25
C
typ.
max.
T
V
J
=125
C
I
F
=11A
typ.
Fig.11 Reverse biased safe operation
Fig. 12 Forward current versus
Fig. 13 Recovery charge versus
area (IGBT)
voltage drop (Fast Diode)
-di
F
/dt (Fast Diode)
Fig.14 Peak forward voltage and
Fig.15 Recovery time versus -di
F
/dt
Fig.16 Peak reverse current versus
recovery time versus -di
F
/dt
(Fast Diode)
-di
F
/dt (Fast Diode)
(Fast Diode)
Fig.17 Dynamic parameters versus
Fig.18 Transient thermal impedance junction to heatsink Z
thJH
junction temperature (Fast Diode)
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