2000 IXYS All rights reserved
1 - 3
V
CES
T
VJ
= 25C to 150C
1200
V
V
GE
Continuous
20
V
I
C25
T
case
= 25C, DC
78
A
I
C80
T
case
= 80C, DC
52
A
I
CM
t
p
= Pulse width limited by T
VJM
140
A
P
tot
T
case
= 80C
222
W
V
RRM
1200
V
I
F(AV)
T
case
= 80C, rectangular d
= 0.5
27
A
I
F(RMS)
T
case
= 80C, rectangular d = 0.5
38
A
I
FRM
T
case
= 80C, t
P
= 10 s, f = 5 kHz
tbd
A
I
FSM
T
VJ
= 45C, t = 10 ms
200
A
T
VJ
= 150C, t = 10 ms
180
A
P
tot
T
case
= 80C
64
W
Symbol
Conditions
Maximum Ratings
I
dAV
T
case
= 80C, sinusoidal 120
120
A
I
FRMS
/I
TRMS
T
case
= 80C, per leg
77
A
I
FSM
/I
TSM
T
VJ
= 25C, t = 10 ms, V
R
= 0 V
750
A
T
VJ
= 150C, t = 10 ms, V
R
= 0 V
670
A
I
2
t
T
VJ
= 25C, t = 10 ms, V
R
= 0 V
2810
A
T
VJ
= 150C, t = 10 ms, V
R
= 0V
2240
A
(di/dt)
cr
T
VJ
= T
VJM
repetitive, I
T
= 150 A
150
A/s
f = 50 Hz, t
P
= 200 s
V
D
=
2
/
3
V
DRM
I
G
= 0.45 A,
non repetitive, I
T
= I
d(AV)
/3
500
A/s
di
G
/dt = 0.45 A/s
(dv/dt)
cr
T
VJ
= T
VJM
; V
DR
=
2
/
3
V
DRM
1000
V/s
R
GK
=
; method 1 (linear voltage rise)
P
GM
T
VJ
= T
VJM
t
P
= 30 s
10
W
I
T
= I
d(AV)
/3
t
P
= 300 s
5
W
t
P
= 10 ms
1
W
P
GAVM
0.5
W
V
RRM
Type
V
1200
VVZB 120-12 io1
1400
VVZB 120-14 io1
1600
VVZB 120-16 io1
IGBT
Fast Recovery Diode
Rectifier Bridge
Features
Soldering connections for PCB
mounting
Isolation voltage 3600 V~
Ultrafast freewheel diode
Convenient package outline
Applications
Drive Inverters with brake system
Advantages
2 functions in one package
No external isolation
Easy to mount with two screws
Suitable for wave soldering
High temperature and power cycling
capability
VVZB 120
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions.
031
V
RRM
= 1200-1600 V
I
dAV
= 120 A
Three Phase Half Controlled
Rectifier Bridge
with IGBT and Fast Recovery Diode
for Braking System
2000 IXYS All rights reserved
2 - 3
VVZB 120
Symbol
Conditions
Characteristic Values
(T
VJ
= 25C, unless otherwise specified)
min.
typ.
max.
I
R
, I
D
V
R
= V
RRM
/V
DRM
,
0.3
mA
V
R
= V
RRM
/V
DRM
, T
VJ
= 150C
5
mA
V
F
, V
T
I
F
= 100 A,
1.47
V
V
T0
For power-loss calculations only
0.85
V
r
T
T
VJ
= 150C
5 m
W
V
GT
V
D
= 6 V;
T
VJ
= 25C
1.5
V
T
VJ
= -40C
1.6
V
I
GT
V
D
= 6 V;
T
VJ
= 25C
100
mA
T
VJ
= -40C
200
mA
V
GD
T
VJ
= T
VJM
; V
D
=
2
/
3
V
DRM
0.2
V
I
GD
T
VJ
= T
VJM
; V
D
=
2
/
3
V
DRM
10
mA
I
L
V
D
= 6 V; t
G
= 30 s
450
mA
di
G
/dt = 0.45 A/s; I
G
= 0.45 A
I
H
T
VJ
= T
VJM
; V
D
= 6 V; R
GK
=
200
mA
t
gd
V
D
= V
DRM
2
s
di
G
/dt = 0.45 A/s; I
G
= 0.45 A
t
q
T
VJ
= T
VJM
; V
R
= 100 V; V
D
=
2
/
3
V
DRM
; t
P
= 200 s
150
s
dv/dt = 10 V/s; I
T
= 120 A; -di/dt = 10 A/s
Q
S
T
VJ
= T
VJM
90
C
I
RM
-di/dt = 0.64 A/s; I
T
/I
F
= 50 A
11
A
R
thJC
per thyristor / diode; sine 120 el.
1 K/W
R
thJH
per thyristor / diode; sine 120 el.
1.3 K/W
V
BR(CES)
V
GS
= 0 V, I
C
= 1 mA
1200
V
V
GE(th)
I
C
= 10 mA
5
8
V
I
GES
V
GE
=
20 V
500
nA
I
CES
V
CE
= 0.8 V
CES
0.5
mA
V
CE
= 0.8 V
CES
,T
VJ
=
150C
3
mA
V
CEsat
V
GE
= 15 V, I
C
= 50 A
3.35
V
t
SC
V
GE
= 15 V, V
CE
= 0.6 V
CES
, T
VJ
=
125C,
10
s
(SCSOA)
R
G
= 11
W
, non repetitive
RBSOA
V
GE
= 15 V, V
CE
= 0.8 V
CES
, T
VJ
=
125C,
100
A
R
G
= 11
W
, Clamped Inductive load, L = 100 H
C
ies
V
CE
= 25 V, f = 1 MHz, V
GE
= 0 V
9
nF
t
d(on)
65
ns
t
d(off)
200
ns
t
ri
tbd
ns
t
fi
tbd
ns
E
on
4.1
mJ
E
off
5.7
mJ
R
thJC
0.32 K/W
R
thJH
0.45 K/W
IGBT
Rectifier Bridge
V
CE
= 0.6 V
CES
, I
C
= 25 A
V
GE
= 15 V, R
G
= 11
W
Inductive load; L = 100 H
T
VJ
=
125C
2000 IXYS All rights reserved
3 - 3
VVZB 120
Symbol
Conditions
Characteristic Values
(T
VJ
= 25C, unless otherwise specified)
min.
typ.
max.
I
R
V
R
= V
RRM
,
T
VJ
= 25C
0.75
mA
V
R
= 0.8 V
RRM
,T
VJ
= 150C
3
7
mA
V
F
I
F
= 30 A,
T
VJ
= 25C
2.55
V
V
T0
For power-loss calculations only
1.65
V
r
T
T
VJ
= 150C
18.2 m
W
I
RM
I
F
= 30 A,
-di
F
/dt = 240 A/s
16
18
A
V
R
= 100 V
t
rr
I
F
= 1 A,
-di
F
/dt = 100 A/s
40
60
ns
V
R
= 30 V
R
thJC
1.1 K/W
R
thJH
1.5 K/W
Common Specification
Maximum Ratings
T
VJ
-40...+150
C
T
VJM
150
C
T
stg
-40...+125
C
V
ISOL
50/60 Hz
t = 1 min
3000
V~
I
ISOL
1 mA
t = 1 s
3600
V~
M
d
Mounting torque
(M5)
2-2.5
Nm
(10-32 unf)
18-22
lb.in.
Weight
typ.
80
g
d
S
Creep distance on surface
12.7
mm
d
A
Strike distance in air
11
mm
a
Maximum allowable acceleration
50
m/s
2
R
25
Thermistor
2.1
k
W
B
25/100
3560
K
Fast Recovery Diode
Module
Dimensions in mm (1 mm = 0.0394")
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