JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
MMBTA13
14
TRANSISTOR
NPN
FEATURES
Power dissipation
P
CM
: 0.3W
Tamb=25
Collector current
I
CM
: 0.3A
Collector-base voltage
V
(BR)CBO
: 30V
Operating and storage junction temperature range
T
J
T
stg
: -55
to +150
ELECTRICAL CHARACTERISTICS
Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic= 100
A
I
E
=0
30
V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic= 100uA
I
B
=0
30
V
Collector-emitter breakdown voltage
V
(BR)EBO
I
E
= 100
A
I
c
=0
10
V
Collector cut-off current
I
CBO
V
CB
=30 V , I
E
=0
0.1
A
Emitter cut-off current
I
EBO
V
EB
= 10V , I
C
=0
0.1
A
h
FE(1)
*
V
CE
=5V, I
C
= 10mA MMBTA13
MMBTA14
5000
10000
DC current gain
h
FE(2)
*
V
CE
=5V, I
C
= 100mA MMBTA13
MMBTA14
10000
20000
Collector-emitter saturation voltage
V
CE (sat)
*
I
C
=100 mA, I
B
=0.1mA
1.5
V
Base-emitter voltage
V
BE
*
V
CE
=5V,I
C
= 100mA
2.0
V
Transition frequency
f
T
V
CE
=5V, I
C
= 10mA
f=
100MHz
125
MHz
*
Pulse Test : pulse width
Marking : MMBTA13:1M
MMBTA14
1N
Unit : mm
SOT
--
23
1. BASE
2. EMITTER
3. COLLECTOR
SOT-23 PACKAGE OUTLINE DIMENSIONS
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
Min
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
1.800
0.300
0
Max
1.100
0.100
1.000
0.500
0.150
3.000
1.400
2.550
2.000
0.500
8
Min
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.071
0.012
0
Max
0.043
0.004
0.039
0.020
0.006
0.118
0.055
0.100
0.079
0.020
8
Dimensions In Millimeters
Dimensions In Inches
0.037TPY
0.022REF
0.950TPY
0.550REF
D
E
1
A
1
A
2
A
E
L
1
L
b
e1
C
0.2
e
PDF 
ZIP
