2000. 2. 28
1/2
SEMICONDUCTOR
TECHNICAL DATA
BC817
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Complementary to BC807.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
Classification 16:100 250 , 25:160 400 , 40:250 630
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=20V, I
E
=0
-
-
0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
0.1
A
DC Current Gain (Note)
h
FE
(1)
V
CE
=1V, I
C
=100mA
100
-
630
h
FE
(2)
V
CE
=1V, I
C
=500mA
40
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=500mA, I
B
=50mA
-
-
0.7
V
Base-Emitter Voltage
V
BE
V
CE
=1V, I
C
=500mA
-
-
1.2
V
Transition Frequency
f
T
V
CE
=5V, I
C
=10mA, f=100MHz
100
-
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
5
-
pF
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
50
V
Collector-Emitter Voltage
V
CEO
45
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
800
mA
Emitter Current
I
E
-800
mA
Collector Power Dissipation
P
C
*
350
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
TYPE
BC817-16
BC817-25
BC817-40
MARK
6A
6B
6C
* : Package Mounted On 99.9% Alumina 10 8 0.6mm.
MARK SPEC
Type Name
Marking
Lot No.
2000. 2. 28
2/2
BC817
Revision No : 2
C
COLLECTOR CURRENT I (mA)
0
P (mW)
C
0
AMBIENT TEMPERATURE Ta ( C)
C
P - Ta
10
DC CURRENT GAIN h
FE
1k
300
3
1
COLLECTOR CURRENT I (mA)
C
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CE
C
I - V (LOW VOLTAGE REGION)
h - I
1
COLLECTOR CURRENT I (mA)
C
0.2
BASE-EMITTER VOLTAGE V (V)
BE
I - V
STATIC CHARACTERISTICS
B
BASE CURRENT
0.8
1.0
I (mA)
C
V - I
C
COLLECTOR CURRENT I (mA)
1
3
300
1k
0.01
CE(sat)
COLLECTOR-EMITTER SATURATION
COLLECTOR CURRENT
BASE-EMITTER
BE
VOLTAGE V (V)
I (mA)
VOLTAGE V (V)
COLLECTOR-EMITTER
CE
0.6
0.4
0.2
0
10
20
30
40
0.8
0.6
0.4
0.2
0
200
400
600
800
1k
COMMON
EMITTER
Ta=25 C
9
8
7
6
5
4
3
2
I =1mA
0
B
V =1V
CE
CE
V =1V
1
2
3
4
5
6
200
400
600
800
1000
1200
8
7
6
5
4
3
2
0
I =1mA
B
C
BE
0.4
0.6
0.8
1.0
3
10
30
100
300
1k
5k
COMMON EMITTER
V =1V
CE
Ta=100
C
Ta=2
5 C
Ta=
-25
C
FE
C
100
30
10
30
100
300
1k
3k
50
500
COMMON EMITTER
V =1V
CE
Ta=100 C
Ta=25 C
Ta=-25 C
CE(sat)
C
VOLTAGE V (V)
100
30
10
0.03
0.1
0.3
1
3
COMMON EMITTER
I /I =25
C B
Ta=1
00
C
Ta=25 C
Ta=-25 C
CE
V =5V
COMMON EMITTER
500
100
30
10
30
100
TRANSITION FREQUENCY
C
T
T
10
1k
300
3
1
COLLECTOR CURRENT I (mA)
C
f - I
f (MHz)
300
Ta=25 C
COLLECTOR POWER DISSIPATION
25
50
75
100
125
150
175
0
100
200
300
10
COMMON EMITTER
Ta=25 C
Ta=100 C
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