1998. 6. 15
1/2
SEMICONDUCTOR
TECHNICAL DATA
BCW68
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
HIGH CURRENT APPLICATION.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
+
_
* : Package Mounted On 99.9% Alumina 10 8 0.6mm.
Type Name
h Rank
FE
Marking
Lot No.
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-60
V
Collector-Emitter Voltage
V
CEO
-45
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-800
mA
Emitter Current
I
E
800
mA
Collector Power Dissipation
P
C
*
350
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
TYPE
MARK
BCW68F
DF
BCW68G
DG
MARK SPEC
1998. 6. 15
2/2
BCW68
Revision No : 1
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-10mA, I
B
=0
-45
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=10 A, I
C
=0
-5.0
-
-
V
Collector Cut-off Current
I
CES
V
EB
=0V, V
CE
=-45V
-
-
-20
nA
Ta=150 , V
EB
=0V, V
CE
=-45V
-
-
-20
A
Emitter Cut-off Current
I
EBO
I
C
=0, V
EB
=-4V
-
-
-20
nA
DC Current Gain
Group F
h
FE
V
CE
=-1V, I
C
=-10mA
75
-
-
Group G
120
-
-
Group F
V
CE
=-1V, I
C
=-100mA
100
-
250
Group G
160
-
400
Group F
V
CE
=-1V, I
C
=-500mA
35
-
-
Group G
60
-
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=-100mA, I
B
=-10mA
-
-
-1.25
V
I
C
=-500mA, I
B
=-50mA
-
-
-2.0
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-100mA, I
B
=-10mA
-
-
-0.3
V
I
C
=-500mA, I
B
=-50mA
-
-
-0.7
Transition Frequency
f
T
I
C
=-80mA, V
CE
=-10V, f=100MHz
100
-
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
-
18
pF
Collector Input Capacitance
C
ib
V
EB
=-0.5V, f=1MHz
-
-
80
pF
Noise Figure
NF
I
C
=-0.2mA, V
CE
=-5V,
Rg=1k , f=1kHz
-
2.0
10
dB
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