1998. 6. 15
1/2
SEMICONDUCTOR
TECHNICAL DATA
KDS2236M/S
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL LANAR DIODE
Revision No : 2
AFC APPLICATION FOR FM RECEIVER.
FEATURES
High Q : Q=70(Min.) (f=50MHz).
Low Reverse Current : I
R
=100nA(Max.) (V
R
=4V).
MAXIMUM RATING (Ta=25 )
1
2
TO-92M
DIM MILLIMETERS
A
B
C
D
E
F
G
H
J
K
1. ANODE
2. CATHODE
3.20 MAX
4.30 MAX
0.55 MAX
2.40 0.15
1.27
2.30
14.00 0.50
0.60 MAX
1.05
1.45
25
0.55 MAX
L
M
N
F
A
G
J
K
D
E
E
L
N
M
C
H
0.80
O
0.75
O
B
+
_
+
_
1
2
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Reverse Voltage
V
R
15
V
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Reverse Current
I
R
V
R
=4V
-
-
100
nA
Total Capacitance
C
T
V
R
=4V, f=1MHz
7.0
-
14
pF
Capacitance Ratio
K
(Note)
0.21
-
0.5
Figure of Merit
Q
V
R
=4V, f=50MHz
70
120
-
DIM
MILLIMETERS
1. NC
2. ANODE
3. CATHODE
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
2
1
3
+
_
Type Name
Marking
(for KDS2236S)
Lot No.
J 3
C
T
(@V
R
=2V, f=1MHz)-C
T
(@V
R
=4V, f=1MHz)
Note) K=
C
T
(@V
R
=4V, f=1MHz)
2236
A
Lot No.
ANODE
Marking (for KDS2236M)
A
C
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