2002. 7. 9
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SEMICONDUCTOR
TECHNICAL DATA
KRA316V~KRA322V
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
DIM MILLIMETERS
A
B
D
E
VSM
1.2 0.05
0.8 0.05
0.5 0.05
0.3 0.05
1.2 0.05
0.8 0.05
0.40
0.12 0.05
C
G
H
J
K
0.2 0.05
B
E
D
G
A
H
K
C
J
2
3
1
P
P
P
5
1. EMITTER
2. BASE
3. COLLECTOR
+
_
+
_
+
_
+
_
+
_
+
_
+
_
+
_
EQUIVALENT CIRCUIT
MAXIMUM RATING (Ta=25 )
MARK SPEC
R1
R2
COMMON(+)
OUT
IN
Type Name
Marking
TYPE NO.
R1(k )
R2(k )
KRA316V
1
10
KRA317V
2.2
2.2
KRA318V
2.2
10
KRA319V
4.7
10
KRA320V
10
4.7
KRA321V
47
10
KRA322V
100
100
CHARACTERISTIC
SYMBOL
RATING
UNIT
Output Voltage
KRA316V 322V
V
O
-50
V
Input Voltage
KRA316V
V
I
-10, 5
V
KRA317V
-12, 10
KRA318V
-12, 5
KRA319V
-20, 7
KRA320V
-30, 10
KRA321V
-40, 15
KRA322V
-40, 10
Output Current
KRA316V 322V
I
O
-100
mA
Power Dissipation
P
D
100
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
TYPE
KRA316V KRA317V KRA318V KRA319V KRA320V KRA321V KRA322V
MARK
P2
P4
P5
P6
P7
P8
P9