2002. 5. 14
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTA1663
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 3
HIGH CURRENT APPLICATION.
FEATURES
1W (Mounted on Ceramic Substrate).
Small Flat Package.
Complementary to KTC4375.
MAXIMUM RATING (Ta=25)
DIM
A
B
D
E
G
H
K
4.70 MAX
2.50 0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
1.50 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
SOT-89
C
J
G
D
1
2
3
2. COLLECTOR (HEAT SINK)
A
C
K
J
F
MILLIMETERS
H
1. BASE
3. EMITTER
B
E
F
F
D
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25)
Note : h
FE
Classification O:100200, Y:160320
P
C
* : KTA1663 mounted on ceramic substrate (250mm
2
x0.8t)
H
Type Name
h Rank
FE
Lot No.
Marking
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-30
V
Collector-Emitter Voltage
V
CEO
-30
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Current
I
C
-1.5
A
Base Current
I
B
-0.3
A
Collector Power Dissipation
P
C
500
mW
P
C
*
1
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=-30V, I
E
=0
-
-
-100
nA
Emitter Cut-off Current
I
EBO
V
EB
=-5V, I
C
=0
-
-
-100
nA
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=-10mA, I
B
=0
-30
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=-1mA, I
C
=0
-5.0
-
-
V
DC Current Gain
h
FE
(Note)
V
CE
=-2V, I
C
=-500mA
100
-
320
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=-1.5A, I
B
=-0.03A
-
-
-2.0
V
Base-Emitter Voltage
V
BE
V
CE
=-2V, I
C
=-500mA
-
-
-1.0
V
Transition Frequency
f
T
V
CE
=-2V, I
C
=-500mA
-
120
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
-
50
pF
2002. 5. 14
2/2
KTA1663
Revision No : 3
I - V
C
CE
CE
COLLECTOR-EMITTER VOLTAGE V (V)
C
C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
I
(
m
A
)
D
C
C
U
R
R
E
N
T
G
A
I
N
h
F
E
COLLECTOR CURRENT I (mA)
C
C
FE
h - I
C
O
L
L
E
C
T
O
R
-
E
M
I
T
T
E
R
S
A
T
U
R
A
T
I
O
N
C
E
(
s
a
t
)
COLLECTOR CURRENT I (mA)
C
C
CE(sat)
V - I
SAFE OPERATING AREA
CE
COLLECTOR-EMITTER VOLTAGE V (V)
C
C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
I
(
m
A
)
I - V
C
BE
BE
BASE-EMITTER VOLTAGE V (V)
C
C
O
L
L
E
C
T
O
R
C
U
R
R
E
N
T
I
(
A
)
V
O
L
T
A
G
E
V
(
V
)
C
O
L
L
E
C
T
O
R
P
O
W
E
R
D
I
S
S
I
P
A
T
I
O
N
P
(
W
)
C
0.2
20
0
AMBIENT TEMPERATURE Ta ( C)
Pc - Ta
40
60
80
100
120
140
160
0
0.4
0.6
0.8
1.0
1.2
1 MOUNTED ON CERAMIC
SUBSTRATE(250mm x0.8t)
2 Ta=25 C
2
1
2
0
-4
-8
-0.4
0
10
1k
-3
-1
-0.01
-1
-0.1
-10
-5
0
-0.8
-0.4
0
-12
-16
-0.8
-1.2
COMMON EMITTER
Ta=25 C
I =-1mA
B
-2mA
-3mA
-4mA
-6mA
-8m
A
-10
mA
0mA
-10
-30
-100
-300
-1k
-3k
30
50
100
300
500
COMMON EMITTER
V =-2V
CE
Ta=100 C
Ta=25 C
Ta=-25 C
-3
-10
-30
-100
-300
-1k
-3k
-0.03
-0.05
-0.1
-0.3
-0.5
-1
-3
COMMON EMITTER
I /I =50
B C
Ta=100 C
Ta=-25 C
Ta=25 C
-1.2
-1.6
-0.4
-0.8
-1.8
-1.2
COMMON EMITTER
V =-2V
CE
T
a=
10
0
C
T
a=
25
C
T
a=
-
25
C
-0.3
-1
-3
-10
-30
-100
-30
-50
-100
-300
-500
-1k
-3k
SINGLE NONREPETITIVE
PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
I MAX(PULSE)
C
I MAX
C
(CONTI-
NUOUS)
DC
OP
ER
AT
ION
1m
s
10
m
s
100m
s
1s
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