2001. 6. 28
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC3552T
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
DC-DC CONVERTERS RELAY DRIVERS, LAMP DRIVERS,
MOTOR DRIVERS, STROBES APPLICATION.
FEATURES
Adoption of FBET, MBIT Processes.
High Current Capacitance.
Low Collector-to-Emitter Saturation Voltage.
High-Speed Switching.
Ultrasmall Package Facilitates Miniaturization in end Products.
High Allowable Power Dissipation.
Complementary to KTA1552T.
MAXIMUM RATING (Ta=25 )
DIM MILLIMETERS
A
B
D
E
TSM
2.9 0.2
1.6+0.2/-0.1
0.70 0.05
0.4 0.1
2.8+0.2/-0.3
1.9 0.2
0.95
0.16 0.05
0.00-0.10
0.25+0.25/-0.15
C
F
G
H
I
J
K
0.60
L
0.55
A
F
G
G
D
K
B
E
C
L
H
J
J
I
2
1
3
+
_
+
_
+
_
+
_
+
_
1. EMITTER
2. BASE
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
80
V
Collector-Emitter Voltage
V
CES
80
V
V
CEO
50
Emitter-Base Voltage
V
EBO
6
V
Collector Current
DC
I
C
3
A
Pulse
I
CP
6
Base Current
I
B
600
mA
Collector Power Dissipation
P
C
*
0.9
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
* Package mounted on a ceramic board (600
0.8 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=40V, I
E
=0
-
-
0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=4V, I
C
=0
-
-
0.1
A
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=10 A, I
E
=0
80
-
-
V
Collector-Emitter Breakdown Voltage
V
(BR)CES
I
C
=100 A, V
BE
=0
80
-
-
V
V
(BR)CEO
I
C
=1mA, I
B
=0
50
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=10 A, I
C
=0
6
-
-
V
Collector-Emitter Saturation Voltage
V
CE(sat)1
I
C
=1A, I
B
=50mA
-
80
120
mV
V
CE(sat)2
I
C
=2A, I
B
=100mA
-
140
210
mV
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=2A, I
B
=100mA
-
0.88
1.2
V
DC Current Gain
h
FE
V
CE
=2V, I
C
=100mA
200
-
560
Transition Frequency
f
T
V
CE
=10V, I
C
=500mA
-
380
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, f=1MHz
-
13
-
pF
Swiitching
Time
Turn-On Time
t
on
-
35
-
nS
Storage Time
t
stg
-
300
-
Fall Time
t
f
-
22
-
Type Name
Marking
Lot No.
H L
I
B1
B2
I
INPUT
OUTPUT
50
100
F
PW=20
s
DC 1%
470
F
R
V
B
R
L
R
BE
V =-5V
CC
V =25V
10I =-10I =I =1A
B1
B2 C
<
=
2001. 6. 28
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KTC3552T
Revision No : 0
V - I
C
COLLECTOR CURRENT I (A)
C
COLLECTOR CURRENT I (A)
COLLECTOR-EMITTER VOLTAGE V (V)
0
CE
0
I - V
C
CE
0.4
0.8
1.2
1.6
2.0
1.0
2.0
3.0
4.0
5.0
0.5
1.5
2.5
3.5
4.5
CE(sat)
C
CE(sat)
COLLECTOR-EMITTER SATURATION
I =0mA
5.0mA
10mA
20mA
40mA
60mA
80mA
100mA
B
C
COLLECTOR CURRENT I (A)
BASE-EMITTER VOLTAGE V (V)
0
BE
0
I - V
C
BE
0.2
0.4
0.6
0.8
1.0
1.2
0.8
0.4
1.2
1.6
2.0
2.4
2.8
3.2
10
30
50
100
300
1K
500
VOLTAGE V (mV)
0.01
0.03
0.1
1
3
0.3
Ta=75
C
V =2V
CE
Ta=25
C
Ta=-2
5 C
10
30
50
100
300
1K
500
0.01
0.03
0.1
1
3
0.3
Ta=25 C
V =2V
CE
Ta=75 C
Ta=-25 C
Ta
=
75
C
Ta
=
25 C
Ta
=
-2
5 C
Ta=-25 C
Ta=25 C
Ta=75 C
10
30
50
100
300
1K
500
0.01
0.03
0.1
1
3
0.3
Ta=
75 C
I /I =50
C B
I /I =50
C B
I /I =20
C B
Ta=
25 C
Ta=-2
5 C
10
30
50
100
300
1K
500
0.01
0.03
0.1
1
3
0.3
V - I
C
COLLECTOR CURRENT I (A)
BE(sat)
C
BE(sat)
BASE-EMITTER SATURATION
VOLTAGE V (mV)
DC CURRENT GAIN h
FE
COLLECTOR CURRENT I (A)
C
h - I
FE
C
COLLECTOR-EMITTER SATURATION
CE(sat)
COLLECTOR CURRENT I (A)
C
V - I
CE(sat)
C
VOLTAGE V (mV)
2001. 6. 28
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KTC3552T
Revision No : 0
COLLECTOR OUTPUT CAPACITANCE
ob
COLLECTOR-BASE VOLTAGE V (V)
CB
C (pF)
C - V
ob
CB
TRANSITION FREQUENCY f (MHz)
T
COLLECTOR CURRENT I (A)
C
f - I
T
C
0.01
0.03
0.1
1
3
0.3
V =10V
CE
MOUNTED ON A CERAMIC BOARD
SINGLE NONREPETITIVE
PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
*
I MAX.(PULSED)
C
I MAX
(CONTIN-
UOUS)
C
100m
S*
10mS*
1mS*
500
S*
10
0
S*
DC
O
PE
RATI
ON
(600mm 0.8mm)
2
C
COLLECTOR POWER DISSIPATION
P (W)
AMBIENT TEMPERATURE Ta ( C)
0
0
Pc - Ta
20
40
60
80
100
120
140 160
0.2
0.4
0.6
0.8
1.0
MOUNTED ON A
CERAMIC BOARD
(600mm 0.8mm)
2
10
1K
30
50
100
300
500
1
3
5
10
30
50
100
f=1MHz
COLLECTOR-EMITTER VOLTAGE V (V)
SAFE OPERATING AREA
COLLECTOR CURRENT I (A)
0.01
C
CE
0.03
0.05
0.1
0.3
0.5
1
3
5
10
0.1
0.3
1
3
10
30
100
0.1
0.3
1
3
10
30
0.5
5
50
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