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Электронный компонент: KTD1510

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1999. 11. 16
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTD1510
TRIPLE DIFFUSED NPN TRANSISTOR
Revision No : 1
HIGH POWER AMPLIFIER
DARLINGTON TRANSISTOR.
FEATURES
Complementary to KTB2510.
Recommended for 60W Audio Amplifier Output Stage.
MAXIMUM RATING (Ta=25 )
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
TO-3P(N)
C
G
L
K
H
A
D
B
E
F
I
d
P
P
T
M
J
Q
1
2
3
A
15.9 MAX
MILLIMETERS
DIM
B
4.8 MAX
C
20.0 0.3
D
2.0 0.3
d
1.0+0.3/-0.25
E
2.0
F
1.0
G
3.3 MAX
H
9.0
I
4.5
J
2.0
K
1.8 MAX
L
20.5 0.5
P
5.45 0.2
Q
3.2 0.2
T
0.6+0.3/-0.1
2.8
M
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=160V, I
E
=0
-
-
100
A
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
100
A
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=30mA, I
B
=0
150
-
-
V
DC Current Gain
h
FE
V
CE
=4V, I
C
=7A
5000
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=7A, I
B
=7mA
-
-
2.5
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=7A, I
B
=7mA
-
-
3.0
V
Transition Frequency
f
T
V
CE
=12V, I
C
=2A
-
50
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, f=1MHz, I
E
=0
-
230
-
pF
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
160
V
Collector-Emitter Voltage
V
CEO
150
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
10
A
Base Current
I
B
1
A
Collector PowerDissipation (Tc=25 )
P
C
100
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
COLLECTOR
EMITTER
70
EQUIVALENT CIRCUIT
BASE
1999. 11. 16
2/3
KTD1510
Revision No : 1
C
COLLECTOR CURRENT I (A)
6
8
4
2
1
COLLECTOR-EMITTER SATURATION
0
CE(sat)
0.2
BASE CURRENT I (mA)
B
0
BASE-EMITTER VOLTAGE V (V)
BE
V - I
I - V
CE
COLLECTOR-EMITTER VOLTAGE V (V)
0
2
10
C
0
COLLECTOR CURRENT I (A)
6
4
6
2
4
8
CE
C
I =0.4mA
B
0.6mA
0.8mA
1.0mA
1.2mA
1.5mA
2.0mA
10
m
A 2.5mA
0.5
1
5 10
50 100 200
2
3
VOLTAGE V (V)
I =5A
C
1
2
2.5
10
125 C (CASE TEMP) 25 C (C
ASE T
EMP)
-30 C
(CA
SE
TEMP
)
CE(sat)
B
I - V
BE
C
R - t
TIME t (S)
10
3
th(t)
TRANSIENT THERMAL RESISTANCE
0.1
th(t)
0.5
1
1000
500
10
0.5
0.2
COLLECTOR CURRENT I (A)
C
h - I
FE
C
FE
DC CURRENT GAIN h
1
5
5000
10000
50000
125 C
25 C
-30 C
R ( C/W)
-3
10
-2
-1
10
1 2
T
TRANSITION FREQUENCY f (MHz)
COLLECTOR CURRENT I (A)
0.02
0
20
60
C
100
f - I
T
C
0.05 0.1
0.5 1
5 10
40
80
Typ.
V =12V
CE
V =4V
CE
CE
V =4V
I =7A
C
I =10A
C
1999. 11. 16
3/3
KTD1510
Revision No : 1
SAFE OPERATING AREA
CE
COLLECTOR-EMITTER VOLTAGE V (V)
3
5
10
50
C
COLLECTOR CURRENT I (A)
100
200
0.05
0.1
0.5
1
5
10
30
100mS
*
10mS
*
I MAX.(PULSED) *
C
DC O
PERAT
ION
Ta=25
C
* SINGLE NONREPETITIVE
50
Pc - Ta
AMBIENT TEMPERATURE Ta ( C)
C
COLLECTOR POWER DISSIPATION P (W)
0
25
3.5
50
100
100
75
125
150
(2)
(1)
(1) Tc = Ta
INFINITE HEAT SINK
(2) NO HEAT SINK
PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE