2003. 7. 3
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTD1898
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
GENERAL PURPOSE APPLICATION.
FEATURES
1W (Mounted on Ceramic Substrate).
Small Flat Package.
Complementary to KTB1260.
MAXIMUM RATING (Ta=25 )
DIM
A
B
D
E
G
H
K
4.70 MAX
2.50 0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
1.50 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
SOT-89
C
J
G
D
1
2
3
2. COLLECTOR (HEAT SINK)
A
C
K
J
F
MILLIMETERS
H
1. BASE
3. EMITTER
B
E
F
F
D
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
Classification O:70 140, Y:120 240, GR:200 400
* Mounted on ceramic substrate (250mm
2
0.8t)
Z
Type Name
h Rank
FE
Lot No.
Marking
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=80V, I
E
=0
-
-
1
A
Emitter Cut-off Current
I
EBO
V
EB
=4V, I
C
=0
-
-
1
A
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=1mA, I
B
=0
80
-
-
V
DC Current Gain
h
FE
(Note)
V
CE
=3V, I
C
=500mA
70
-
400
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=500mA, I
B
=20mA
-
-
0.4
V
Transition Frequency
f
T
V
CE
=10V, I
C
=50mA, f=100MHz
-
100
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
20
-
pF
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
100
V
Collector-Emitter Voltage
V
CEO
80
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
1
A
Emitter Current
I
E
-1
A
Collector Power Dissipation
P
C
500
mW
P
C
*
1
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
2003. 7. 3
2/3
KTD1898
Revision No : 1
C
0.1
0
BASE-EMITTER VOLTAGE V (V)
I - V
C
COLLECTOR CURRENT I (mA)
1
10
100
1000
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BE
BE
Ta=25 C
V =5V
CE
COLLECTOR-EMITTER VOLTAGE V (V)
COLLECTOR CURRENT I (mA)
0
C
CE
CE
C
I - V
0.2
0.4
0.6
0.8
1.0
DC CURRENT GAIN h
COLLECTOR CURRENT I (mA)
10
C
h - I
FE
100
30
300
1K
FE
C
V =3V
CE
V =1V
CE
COLLECTOR SATURATION
CE(sat)
0.01
COLLECTOR CURRENT I (mA)
C
C
CE(sat)
V - I
VOLTAGE V (V)
0.02
0.05
0.1
0.2
0.5
1.0
2.0
I /I =20/1
C B
I /I =10/1
B
C
Ta=25 C
TRANSITION FREQUENCY f (MHz)
T
1
EMITTER CURRENT I (mA)
C
f - I
T
E
1
2
5
10
20
50
100
200
500
1K
2
5
10
20
50 100 200
500 1K
Ta=25 C
V =-5V
CE
COLLECTOR OUTPUT CAPACITANCE C (pF)
0.1
1
10
0.2
ob
100
1000
COLLECTOR-BASE VOLTAGE V (V)
10
0.5
1
5
2
CB
20
50 100
C - V
ob
CB
Ta=25 C
f=1MHz
I =0A
E
1.8 2.0
0
2
4
6
8
10
12
0
10
100
1K
Ta=25 C
6mA
5mA
4mA
3mA
2mA
1mA
I =0mA
B
Ta=25 C
0
10
100
1000
I =0A
C
2003. 7. 3
3/3
KTD1898
Revision No : 1
COLLECTOR POWER DISSIPATION Pc (W)
0
0
AMBIENT TEMPERATURE Ta ( C)
Pc - Ta
20
40
60
80
100
120
140
160
0.2
0.4
0.6
0.8
1.0
1.2
MOUNTED ON CERAMIC
SUBSTRATE
(250mm x0.8t)
Ta=25 C
2
1
2
1
2
(CONTINUOUS)
DC OPERATION
COLLECTOR-EMITTER VOLTAGE V (V)
SAFE OPERATING AREA
COLLECTOR CURRENT I (A)
1m
3m
30m
3
10m
100m
300m
1
C
CE
0.1
0.3
1
3
10
30
100
100mS *
Pw=10ms *
I MAX.
I (Pulse) MAX. *
C
C
* SINGLE NONREPETITVE
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
PULSE Ta=25 C
PDF 
ZIP