2003. 6. 16
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTD882
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 4
AUDIO FREQUENCY POWER AMPLIFIER
LOW SPEED SWITCHING
FEATURES
Complementary to KTB772.
MAXIMUM RATING (Ta=25 )
TO-126
H
J
MILLIMETERS
C
E
F
G
D
A
B
DIM
A
C
E
F
G
H
J
K
M
O
P
N
L
D
1. EMITTER
2. COLLECTOR
3. BASE
K
L
M
N
O
P
8.3 MAX
5.8
0.7
3.2 0.1
3.5
11.0 0.3
2.9 MAX
1.0 MAX
1.9 MAX
0.75 0.15
2.3 0.1
0.65 0.15
1.6
3.4 MAX
B
1
2
3
+
_
+
_
+
_
15.5 0.5
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
* Pulse Test : Pulse Width 350 S, Duty Cycle 2% Pulsed
Note: h
FE
(2) Classification O:100 200 , Y:160 320 , GR:200 400
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
40
V
Collector-Emitter Voltage
V
CEO
30
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
DC
I
C
3
A
Pulse (Note)
I
CP
7
Base Current (DC)
I
B
0.6
A
Collector Power
Dissipation
Ta=25
P
C
1.5
W
Tc=25
10
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=30V, I
E
=0
-
-
1
A
Emitter-Cut-off Current
I
EBO
V
EB
=3V, I
C
=0
-
-
1
A
DC Current Gain *
h
FE
(1)
V
CE
=2V, I
C
=20mA
30
150
-
h
FE
(2) (Note)
V
CE
=2V, I
C
=1A
100
160
400
Collector-Emitter Saturation Voltage *
V
CE(sat)
I
C
=2A, I
B
=0.2A
-
0.3
0.5
V
Base-Emitter Saturation Voltage *
V
BE(sat)
I
C
=2V, I
B
=0.2A
-
1.0
2.0
V
Current Gain Bandwidth Product
f
T
V
CE
=5V, I
C
=0.1A
-
90
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
45
-
pF
Note : Pulse Width 10mS, Duty Cycle 50%.
2003. 6. 16
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KTD882
Revision No : 4
C
0
COLLECTOR CURRENT I (A)
CE
16
12
8
20
4
COLLECTOR-EMITTER VOLTAGE V (V)
0
CE
I - V
C
DC CURRENT GAIN h
FE
COLLECTOR CURRENT I (mA)
C
FE
h - I
C
SATURATION VOLTAGE V V (mV)
CE(sat),
COLLECTOR CURRENT I (mA)
C
CE(sat)
V ,V - I
C
0.4
0.8
1.2
1.6
2.0
1
5
10
30
50
100
300
0.01
1K
3
500
10
3
C
0.3
0.1
1
COLLECTOR CURRENT I (A)
C
f - I
T
T
CURRENT GAIN BANDWIDTH PRODUCT f (MHz)
I =1mA
B
I =2mA
B
I =3mA
B
I =4mA
B
I =5mA
B
B
I =6mA
B
I =7mA
I =8mA
B
I =9mA
B
I =10mA
B
BE(sat)
1
1
5
10
50
30
100
300
500
1K
3 5 10
30 50 100
300
1K
3K
V =2V
CE
1K
10
1
3
100
500
300
1K
5
30
50
100
30
300
3K
BE(sat)
I /I =10
C B
V (sat)
CE
V (sat)
BE
0.03
V =5V
CE
ob
CAPACITANCE C (pF)
1
1
3
10
5
100
50
30
COLLECTOR-BASE VOLTAGE V (V)
10
30
100
300
I =0
3K
1K
CB
E
1K
300
500
C - V
ob
CB
f=1MHz
5K
3
3
1
10
3
COLLECTOR CURRENT I (A)
C
3
5
1
COLLECTOR-EMITTER VOLTAGE V (V)
3
10
30
CE
SAFE OPERATING AREA
1
0.5
0.3
0.1
0.05
0.03
0.01
10
100
300
1K
SINGLE NONREPETITIVE
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
I MAX.
(PULSED)
C
I MAX.
(CONTINUOUS)
C
DC OPERATION
Tc=25 C
100
S
1mS
10mS
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