1999. 5. 4
1/5
SEMICONDUCTOR
TECHNICAL DATA
KTN2222S/AS
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Low Leakage Current
: I
CEX
=10nA(Max.) ; V
CE
=60V, V
EB(OFF)
=3V.
Low Saturation Voltage
: V
CE(sat)
=0.3V(Max.) ; I
C
=150mA, I
B
=15mA.
Complementary to the KTN2907S/2907AS.
DIM
MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
+
_
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
KTN2222S KTN2222AS
Collector-Base Voltage
V
CBO
60
75
V
Collector-Emitter Voltage
V
CEO
30
40
V
Emitter-Base Voltage
V
EBO
5
6
V
Collector Current
I
C
600
mA
Collector Power Dissipation
(Ta=25 )
P
C
350
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Note : P
C
* : Package Mounted on 99.5% alumina 10 8 0.6mm.
MARK SPEC
Type Name
Marking
Lot No.
ZB
Type Name
Lot No.
ZG
TYPE
MARK
KTN2222S
Z B
KTN2222AS
Z G
1999. 5. 4
2/5
KTN2222S/AS
Revision No : 2
ELECTRICAL CHARACTERISTICS (Ta=25 )
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
KTN2222AS
I
CEX
V
CE
=60V, V
EB(OFF)
=3V
-
-
10
nA
Collector Cut-off Current
KTN2222S
I
CBO
V
CB
=50V, I
E
=0
-
-
0.01
A
KTN2222AS
V
CB
=60V, I
E
=0
-
-
0.01
Emitter Cut-off Current
KTN2222AS
I
EBO
V
EB
=3V, I
C
=0
-
-
10
nA
Collector-Base
Breakdown Voltage
KTN2222S
V
(BR)CBO
I
C
=10 A, I
E
=0
60
-
-
V
KTN2222AS
75
-
-
Collector-Emitter *
Breakdown Voltage
KTN2222S
V
(BR)CEO
I
E
=10mA, I
B
=0
30
-
-
V
KTN2222AS
40
-
-
Emitter-Base
Breakdown Voltage
KTN2222S
V
(BR)EBO
I
E
=10 A, I
C
=0
5
-
-
V
KTN2222AS
6
-
-
DC Current Gain *
KTN2222S
KTN2222AS
h
FE
(1)
I
C
=0.1mA, V
CE
=10V
35
-
-
h
FE
(2)
I
C
=1mA, V
CE
=10V
50
-
-
h
FE
(3)
I
C
=10mA, V
CE
=10V
75
-
-
h
FE
(4)
I
C
=150mA, V
CE
=10V
100
-
300
KTN2222S
h
FE
(5)
I
C
=500mA, V
CE
=10V
30
-
-
KTN2222AS
40
-
-
Collector-Emitter *
Saturation Voltage
KTN2222S
V
CE(sat)
1
I
C
=150mA, I
B
=15mA
-
-
0.4
V
KTN2222AS
-
-
0.3
KTN2222S
V
CE(sat)
2
I
C
=500mA, I
B
=50mA
-
-
1.6
KTN2222AS
-
-
1
Base-Emitter *
Saturation Voltage
KTN2222S
V
BE(sat)
1
I
C
=150mA, I
B
=15mA
-
-
1.3
V
KTN2222AS
0.6
-
1.2
KTN2222S
V
BE(sat)
2
I
C
=500mA, I
B
=50mA
-
-
2.6
KTN2222AS
-
-
2.0
Transition Frequency
KTN2222S
f
T
V
CE
=20V, I
C
=20mA,
f=100MHz
250
-
-
MHz
KTN2222AS
300
-
-
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1.0MHz
-
-
8
pF
Input Capacitance
KTN2222S
C
ib
V
EB
=0.5V, I
C
=0, f=1.0MHz
-
-
30
pF
KTN2222AS
-
-
25
1999. 5. 4
3/5
KTN2222S/AS
Revision No : 2
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Input Impedance
KTN2222AS
h
ie
I
C
=1mA, V
CE
=10V, f=1kHz
2
-
8
k
I
C
=10mA, V
CE
=10V, f=1kHz
0.25
-
1.25
Voltage Feedback Ratio
KTN2222AS
h
re
I
C
=1mA, V
CE
=10V, f=1kHz
-
-
8
x10
-4
I
C
=10mA, V
CE
=10V, f=1kHz
-
-
4
Small-Singal Current Gain
KTN2222AS
h
fe
I
C
=1mA, V
CE
=10V, f=1kHz
50
-
300
I
C
=10mA, V
CE
=10V, f=1kHz
75
-
375
Collector Output Admittance
KTN2222AS
h
oe
I
C
=1mA, V
CE
=10V, f=1kHz
5
-
35
I
C
=10mA, V
CE
=10V, f=1kHz
25
-
200
Collector-Base Time Constant
KTN2222AS
C
c
rbb'
I
E
=20mA, V
CB
=20V, f=31.8MHz
-
-
150
pS
Noise Figure
KTN2222AS
NF
I
C
=100 A, V
CE
=10V,
Rg=1k , f=1kHz
-
-
4
dB
Switching Time
Delay Time
t
d
V
CC
=30V, V
BE(OFF)
=0.5V
I
C
=150mA, I
B1
=15mA
-
-
10
nS
Rise Time
t
r
-
-
25
Storage Time
t
stg
V
CC
=30V, I
C
=150mA
I
B1
=-I
B2
=15mA
-
-
225
Fall Time
t
f
-
-
60
1999. 5. 4
4/5
KTN2222S/AS
Revision No : 2
C
COLLECTOR CURRENT I (mA)
10
DC CURRENT GAIN h
FE
1
0.5
COLLECTOR CURRENT I (mA)
C
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CE
C
I - V
h - I
TRANSITION FREQUENCY f (MHz)
COLLECTOR CURRENT I (mA)
C
T
f - I
0.4
0.8
1.2
1.6
200
400
600
800
FE
C
30
50
100
300
500
1K
V =10V
CE
T
C
10
-1
100
-10
-100
-1k
-3k
Ta=25 C
V =10V
1000
CE
COMMON EMITTER
Ta=25 C
1.8
1000
I =2mA
B
3
10
30
100
300
1K
Ta=-25 C
Ta=25 C
Ta=75 C
100
0.5
1
0.6
0.4
0.2
0
COLLECTOR-EMITTER SATURATION
CE(sat)
10
3
30
V - I
CE(sat)
C
1k
300
I /I =10
C
VOLTAGE V (V)
COLLECTOR CURRENT I (mA)
C
V
CE(sat)
COMMON EMITTER
B
BASE-EMITTER SATURATION
VOLTAGE V (V)
COLLECTOR CURRENT I (mA)
3
0.2
0.5
BE(sat)
1
0
10
30
100
C
1k
300
0.4
I /I =10
COMMON EMITTER
V - I
BE(sat)
C B
C
0.6
0.8
1.0
1.2
1.4
1.6
V
BE(sat)
Ta=-25 C
Ta=25 C
Ta=75 C
COLLECTOR CURRENT I (mA)
0.2
0.05
BASE-EMITTER VOLTAGE V (V)
BE
C
0.3
0.4
0.5
0.6
0.1
0.3
1
3
10
30
100
300
500
0.7
0.8
0.9
1.0
I - V
C
BE
Ta=75 C
T
a=25
C
Ta=-25 C
COMMON EMITTER
V =10V
CE
6mA
4mA
8mA
10mA
12mA
14mA
16mA
18mA
20mA
V =1V
CE
V =2V
CE
Ta=25 C
30
300
-3
-30
-300
1999. 5. 4
5/5
KTN2222S/AS
Revision No : 2
COLLECTOR OUTPUT CAPACITANCE Cob (pF)
COLLECTOR-BASE VOLTAGE V (V)
CB
Cob - V
CB
1.0
-0.1
10
-1.0
-10
-100
-300
COMMON EMITTER
Ta=25 C
100
EMITTER-BASE VOLTAGE V (V)
EB
COLLECTOR INPUT CAPACITANCE Cib (pF)
3.0
30
Cib
Cob
f=1MHz,
EB
Cib - V
COLLECTOR POWER DISSIPATION
0
C
0
AMBIENT TEMPERATURE Ta ( C)
Pc - Ta
P (mW)
25
50
75
100
125
150
175
100
200
300
400
500
(1)
(2)
(1) MOUNTED ON
99.5% ALUMINA
10
x8x0.6mm
(2) Ta=25 C
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