1999. 11. 16
1/2
SEMICONDUCTOR
TECHNICAL DATA
TIP41C
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
GENERAL PURPOSE APPLICATION.
FEATURES
Complementary to TIP42C.
MAXIMUM RATING (Ta=25 )
DIM MILLIMETERS
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
TO-220AB
10.30 MAX
15.30 MAX
0.80
3.60 0.20
3.00
6.70 MAX
13.60 0.50
5.60 MAX
0.50
1.50 MAX
2.54
4.70 MAX
2.60
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
A
E
M
M
1
2
3
F
B
G
H
L
C
K
J
O
N
P
D
1.37 MAX
1.50 MAX
R
S
Q
C
T
Q
1.50
R
9.50 0.20
S
8.00 0.20
T
2.90 MAX
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
100
V
Collector-Emitter Voltage
V
CEO
100
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
DC
I
C
6
A
Pulse
I
CP
10
Base Current
I
B
2
A
Collector Power
Dissipation
Ta=25
P
C
2
W
Tc=25
65
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Emitter Sustaining Voltage
V
CEO(SUS)
I
C
=30mA, I
B
=0
100
-
-
V
Collector Cut-off Current
I
CEO
V
CE
=60V, I
B
=0
-
-
0.7
mA
Collector Cut-off Current
I
CES
V
CE
=100V, V
EB
=0
-
-
400
A
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
1
mA
DC Current Gain
h
FE
V
CE
=4V, I
C
=0.3A
30
-
-
V
CE
=4V, I
C
=3A
15
-
75
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=6A, I
B
=600mA
-
-
1.5
V
Base-Emitter On Voltage
V
BE(on)
V
CE
=4V, I
C
=6A
-
-
2.0
V
Transition Frequency
f
T
V
CE
=10V, I
C
=500mA
3.0
-
-
MHz
1999. 11. 16
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TIP41C
Revision No : 1
C
COLLECTOR POWER DISSIPATION P (W)
0
10
SATURATION VOLTAGE
CE(sat)
30
10
3
1
COLLECTOR CURRENT I (mA)
C
0
AMBIENT TEMPERATURE Ta ( C)
C
P - Ta
V , V - I
h - I
C
COLLECTOR CURRENT I (mA)
1
1k
FE
1
DC CURRENT GAIN h
COLLECTOR-EMITTER VOLTAGE V (V)
SAFE OPERATING AREA
COLLECTOR CURRENT I (A)
1
C
10
300
30
CE
FE
C
3
10
30
100
300
1k
3k
10k
3
10
30
100
300
CE(sat)
BE(sat)
C
V ,V (mV)
BE(sat)
100
300
1k
3k
10k
30
100
300
1k
3k
10k
V
BE(sat)
V
CE(sat)
50
100
150
200
10
20
30
40
50
60
70
80
3
1
00
0.1
0.3
1
3
10
30
I MAX.(PULSE)
C
C
I MAX.
(CONTINUOUS)
*
SINGLE NONREPETITIVE
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
*
0.5mS
1m
S
5m
S
*
*
*
DC
OPER
ATING
V =4V
CE
I /I =10
C B
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