Features
Perfect for 802.11B, HOP, SWAP, HOMERF,
Bluetooth, WDECT, MDS, MMDS
Single Positive Supply
Power Added Efficiency As High As 55 Percent
IP
3
= +43 dBm
Output Power 26.5 dBm @ 3.3 V
Output Power 28.5 dBm @ 5.0 V
100 Percent Duty Cycle
2200 to 2600 MHz Operation
8 Pin MSOP Full Downset Plastic Package
Operates Over Wide Ranges of Supply Voltage
Self-Aligned MSAG
-Lite MESFET Process
Description
The MA02303GJ is an RF power amplifier based on
M/A-COM's Self-Aligned MSAG
MESFET Process.
This product is designed for use in 2.4 GHz ISM
products. For booster applications, it features a low
power "bypass" mode and output power control
RF Power Amplifier IC
for 2.4 GHz ISM
MA02303GJ
Functional Schematic
Absolute Maximum Ratings
1
1. Beyond these limits, the device may be damaged or device reliability
reduced. Functional operation at absolute-maximum-rated conditions is
not implied.
Package bottom is electrical and thermal ground
PIN 1
PIN 8
PIN
Function
Description
1
V
D1
Drain voltage, first stage
2
RF
IN
/ V
G1
RF input and drain
voltage for first stage
3
GND
Ground
4
V
G2
Gate bias voltage,
second stage
5
V
G3
Gate bias voltage,
third stage
6
GND
Ground
7
RF
OUT
/ V
D3
RF output and drain
voltage for third stage
8
V
D2
Drain voltage for
second stage
PIN Configuration
Rating
Symbol
Value
Unit
DC Supply Voltage
V
DD
5.5
V
RF Input Power
P
IN
10
mW
Junction Temperature
T
J
150
C
Storage Temperature
T
STG
-40 to +150
C
Operating Temperature T
OPER
-40 to +100
C
Moisture Sensitivity
JEDEC Level 1
Ordering Information
Part Number
Description
MA02303GJ-R7
7 inch, 1000 piece reel
MA02303GJ-R13
13 inch, 3000 piece reel
MA02303GJ-SMB
Sample test board
RF Power Amplifier IC for 2.4 GHz ISM
MA02303GJ
Specifications subject to change without notice.
n
North America: Tel. (800) 366-2266
n
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Electrical Specifications: V
DD
= +3.3 V, P
IN
= -2 dBm, Duty Cycle = 100 %,
T
S
= 37 C (Note 1), measured on evaluation board shown in Figure 11.
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Frequency Range
2400
2500
MHz
Output Power,
= 2450 MHz
P
OUT
25.3
26.5
--
dBm
Power Added Efficiency,
= 2450 MHz
51
%
Current,
= 2450 MHz
I
DD
265
415
mA
Current for linear operation,
= 2450 MHz,
P
IN
adjusted for P
OUT
= 20.0 dBm +/- 0.2 dBm
I
DD
415
mA
Gain,
= 2450 MHz,
P
IN
adjusted for P
OUT
= 20.0 dBm +/- 0.2 dBm
G
29.5
dB
Harmonics,
= 2450 MHz
2, 3, 4
-40
dBc
Input VSWR,
= 2450 MHz
--
--
2.0:1
--
Off Isolation
(V
DD
=0 V)
--
40
dB
Thermal Resistance, junction to package bottom
R
TH
25
C/W
Third Order Intercept Point
IP
3
43
dBm
Load Mismatch
(V
DD
= 5.5 V, VSWR = 8:1, P
IN
= 0 dBm)
--
No Degradation in Power Output
Stability (P
IN
= -2 to 2 dBm, V
DD
= 0-5.5 V, Load VSWR = 5:1,
all phases)
--
All non-harmonically related outputs more
than 60 dB below desired signal
2
1. T
S
is the temperature measured at the soldering point of the downset paddle on the bottom of the IC.
RF Power Amplifier IC for 2.4 GHz ISM
MA02303GJ
Specifications subject to change without notice.
n
North America: Tel. (800) 366-2266
n
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
0
10
20
30
40
50
60
0
50
100
150
200
250
300
-10
-5
0
5
PAE
P
OUT
I
DD
B
I
DD
(mA)
P
IN
(dBm)
P
OUT
(dBm), PAE (%)
V
DD1, 2, 3
= 3.3 V
F = 2450 MHz
0
10
20
30
40
50
60
0.05
0.10
0.15
0.20
0.25
0.30
0.35
1
2
3
4
5
PAE
I
DD
P
OUT
B
I
DD
(A)
P
IN
(dBm)
P
OUT
(dBm), PAE (%)
I
DD
PAE
P
OUT
P
IN
= -2 dBm
F = 2450 MHz
Typical Characteristics
(Measured data from process nominal devices)
Output Power, Drain Current and Efficiency
vs. Supply Voltage
3
0
10
20
30
40
50
60
-30
-25
-20
-15
-10
-5
0
2200
2300
2400
2500
2600
PAE
P
OUT
IRL
B
IRL (dB)
FREQUENCY (MHz)
P
OUT
(dBm), PAE (%)
P
IN
= - 2 dBm
V
DD
= 3.3 V
0
5
10
15
20
25
30
35
0
50
100
150
200
250
300
350
-50
0
50
100
P
OUT
I
DD
B
I
DD
(mA)
Temperature, T
S
(
o
C)
P
OUT
(dBm)
P
IN
= - 2 dBm
V
DD
- 3.0 V
F = 2450 MHz
Output Power, Drain Current and
Efficiency vs. Input Power
Output Power, Input Return Loss and
Efficiency vs. Frequency
Output Power and Drain Current vs.
Temperature at V
DD
= +3.0 V
0
2
4
6
8
10
12
0
50
100
150
200
250
300
-10
-5
0
5
PAE
P
OUT
I
DD
B
I
DD
(mA)
P
IN
(dBm)
P
OUT
(dBm), PAE (%)
V
DD1, 2
= 3.3 V, V
DD3
= 0.0 V
F = 2450 MHz
Output Power, and Drain Current vs. Input
Power for Low Current "Bypass" Mode
(V
DD1,2
= 3.3 V, V
DD3
= 0.0 V)
0
5
10
15
20
25
30
0
100
200
300
400
500
600
0.0
0.5
1.0
1.5
2.0
2.5
3.0
P
OUT
I
DD1
I
DD2
P
OUT
(dBm)
I
DD1
, I
DD2
(mA)
V
DD1
(V)
Output Power, Drain Current and Efficiency
vs. V
DD1
for Power Control
RF Power Amplifier IC for 2.4 GHz ISM
MA02303GJ
Specifications subject to change without notice.
n
North America: Tel. (800) 366-2266
n
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Typical Characteristics (Cont'd)
(Measured data from process nominal devices)
4
- 2 0
- 1 5
- 1 0
- 5
0
5
1 0
1 5
2 0
2 5
3 0
0
2 0
3 0
4 0
P
OUT
(dBm)
P
I N
= - 2 d B m
0
= 2 4 5 0 M H z
V
D D
= 3 . 3 V
0
1
2
3
4
5
6
-50
0
50
100
150
P
DISS
(W) = I
DD
* V
DD3
- P
OUT
Temperature T
S
(
o
C)
Maximum Operating Temperature (Ts) to
Maintain <150 C Junction Temperature.
Harmonics
0
5
10
15
20
25
30
35
0
50
100
150
200
250
300
350
-50
0
50
100
P
OUT
I
DD
B
I
DD
(mA)
Temperature, T
S
(
o
C)
P
OUT
(dBm)
P
IN
= - 2 dBm
V
DD
- 3.2 V
F = 2450 MHz
0
5
10
15
20
25
30
35
0
50
100
150
200
250
300
350
-50
0
50
100
P
OUT
I
DD
B
I
DD
(mA)
Temperature, T
S
(
o
C)
P
OUT
(dBm)
P
IN
= - 2 dBm
V
DD
- 3.6 V
F = 2450 MHz
Output Power and Drain Current vs.
Temperature at V
DD
= +3.2 V
Output Power and Drain Current vs.
Temperature at V
DD
= +3.6V
RF Power Amplifier IC for 2.4 GHz ISM
MA02303GJ
Specifications subject to change without notice.
n
North America: Tel. (800) 366-2266
n
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Figure 12 Evaluation Board Schematic
Mechanical Data
Application Information
List of Components
5
Discrete Components
Transmission Line Lengths
*
C1 C4 = 100 pF multilayer ceramic chip capacitor
(Dielectric Labs C11AH101K5TXL)
C5 = 2.0 pF multilayer ceramic chip capacitor
(Dielectric Labs C11AH2R0BTXL)
C6 = 1.2 pF multilayer ceramic chip capacitor
(Dielectric Labs C11AH1R2B5TXL)
R1 = 300
chip resistor (P300ECT-ND)
L1 = 1.8 nH chip inductor (Toko TKS235CT-ND)
L2 = 27 nH chip inductor (Coilcraft 1008CS-270XKBB)
T1 = 0.15"
T2 = 0.21"
T3 = 0.11" (Not very critical)
T4 = 0.16"
T5 = 0.13"
T6 = 0.16"
T7 = 0.13" (Not very critical)
T8 = 0.077" (Not very critical)
T1, T2, T3, T5, T6 are 0.077" wide
T4, T7, and T8 are 0.026" wide
*The board material is 0.060" FR-4 (distance is between RF and GND) with a dielectric constant of
about 4.3 (standard FR-4)
RF
IN
+V
DD
RF
OUT
L2
1
2
3
4
5
6
7
8
T2
C2
C4
3
C1
T1
L1
R1
T3
T4
C5
T5
C6
T6
C3
Full-Downset Paddle
To Board Ground
T7
T8
Figure 11 Component layout and printed circuit drawing for evaluation board (60 mil GETEK
board).
RF Power Amplifier IC for 2.4 GHz ISM
MA02303GJ
Specifications subject to change without notice.
n
North America: Tel. (800) 366-2266
n
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
6
Designing with the MA02303GJ
The MA02303GJ is built using a near-enhancement mode FET that operates from a single supply voltage. A negative
voltage is not required because the FET is designed to operate with a +0V DC gate bias.
There is no impedance matching or RF choking on this IC these functions are supplied externally. This approach
offers the highest level of performance, the lowest bill of materials cost, and far fewer components than a discrete de-
sign.
To duplicate MA02303GJ data sheet performance, your circuit board must recreate the same impedances developed on
this evaluation board. The table below has one-port s-parameter measurements looking into the traces on the evalua-
tion board. S-parameters of the MA02303GJ are not supplied because the device is designed to operate under large-
signal conditions.
Frequency
V
DD1
Pin 1
RF
IN
/V
GG1
Pin 2
V
GG2
Pin 4
RF
OUT
/V
DD3
Pin 7
V
DD2
Pin 8
GHz
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
0.2
0.98890
168.89
0.98437
158.43
0.98990
157.75
0.96758
88.92
0.98740
170.03
0.3
0.88449
130.14
0.97810
148.00
0.98811
147.07
0.93440
52.01
0.87259
126.11
0.4
0.96296
162.21
0.96932
138.02
0.98733
136.83
0.89791
28.02
0.95647
168.46
0.5
0.98166
159.36
0.96033
128.52
0.98729
126.92
0.85525
8.85
0.97951
165.71
0.6
0.98669
150.11
0.95221
119.37
0.98779
117.53
0.80306
-8.42
0.98325
157.06
0.7
0.98659
142.94
0.94257
110.68
0.98796
108.67
0.75165
-23.19
0.98331
150.64
0.8
0.98701
136.46
0.93372
102.50
0.98912
100.34
0.70235
-36.51
0.98362
144.92
0.9
0.98696
130.40
0.92399
94.78
0.98928
92.48
0.65785
-49.03
0.98291
139.57
1.0
0.98757
124.64
0.91521
87.48
0.99004
85.10
0.61674
-61.22
0.98248
134.49
1.1
0.98793
119.13
0.90655
80.60
0.99099
78.16
0.58189
-73.60
0.98325
129.55
1.2
0.98766
113.79
0.89741
74.13
0.99165
71.67
0.55207
-86.36
0.98254
124.75
1.3
0.98685
108.52
0.88850
68.01
0.99162
65.55
0.52778
-99.76
0.98097
119.95
1.4
0.98253
103.08
0.87922
62.20
0.99228
59.78
0.51054
-113.87
0.97567
114.77
1.5
0.91016
98.26
0.87041
56.61
0.99283
54.27
0.50134
-128.62
0.88506
109.11
1.6
0.97895
96.95
0.85901
51.24
0.99372
49.02
0.50184
-143.72
0.96660
110.93
1.7
0.98693
91.94
0.84867
46.25
0.99362
44.08
0.51099
-159.03
0.97912
105.76
1.8
0.98885
87.51
0.83780
41.39
0.99411
39.33
0.52890
-174.06
0.98174
101.51
1.9
0.98968
83.39
0.82602
36.67
0.99457
34.73
0.55378
171.57
0.98247
97.56
2.0
0.99001
79.46
0.81268
32.09
0.99405
30.31
0.58373
158.06
0.98252
93.75
2.1
0.98939
75.68
0.79856
27.65
0.99409
26.02
0.61689
145.85
0.96646
89.86
2.2
0.99079
72.12
0.78264
23.35
0.99430
21.85
0.65283
133.76
0.98349
87.18
2.3
0.99100
68.61
0.76563
19.11
0.99427
17.75
0.68573
123.12
0.98395
83.71
2.4
0.99134
65.25
0.74652
14.96
0.99425
13.76
0.71788
113.31
0.98474
80.41
2.5
0.99146
61.98
0.72506
10.91
0.99399
9.82
0.74798
104.32
0.98447
77.23
2.6
0.99178
58.73
0.70186
6.91
0.99400
5.85
0.77528
95.95
0.98507
74.04
2.7
0.99134
55.49
0.67587
2.97
0.99331
1.90
0.79976
88.27
0.98381
70.83
2.8
0.98781
52.20
0.64683
-0.91
0.99282
-2.00
0.82079
81.13
0.98006
67.52
2.9
0.96980
48.90
0.61470
-4.81
0.99214
-5.98
0.83832
74.49
0.96403
63.91
3.0
0.95172
48.55
0.57400
-8.86
0.99108
-9.98
0.85400
68.30
0.90400
62.55
3.1
0.98242
46.16
0.52740
-11.19
0.98954
-13.99
0.86663
62.57
0.95087
63.65
3.2
0.99063
43.08
0.48956
-13.34
0.98827
-18.12
0.87801
57.07
0.97696
60.24
3.3
0.99392
40.27
0.44620
-15.29
0.98684
-22.42
0.88698
51.92
0.98397
57.19
3.4
0.99353
37.51
0.40182
-16.23
0.98579
-26.81
0.89353
46.93
0.98539
54.35
3.5
0.99183
34.87
0.35797
-15.65
0.98338
-31.29
0.89823
42.18
0.98374
51.69
3.6
0.98528
32.36
0.31683
-13.12
0.98114
-36.02
0.90042
37.52
0.97595
49.24
RF Power Amplifier IC for 2.4 GHz ISM
MA02303GJ
Specifications subject to change without notice.
n
North America: Tel. (800) 366-2266
n
Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
7
Designing with the MA02303GJ (Cont'd)
Frequency
V
DD1
Pin 1
RF
IN
/V
GG1
Pin 2
V
GG2
Pin 4
RF
OUT
/V
DD3
Pin 7
V
DD2
Pin 8
GHz
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
3.7
0.98115
30.74
0.28368
-7.89
0.97774
-40.95
0.89832
32.95
0.97468
47.68
3.8
0.99055
28.59
0.26456
-0.17
0.97527
-46.15
0.88711
28.34
0.98255
45.41
3.9
0.99468
26.15
0.26206
8.43
0.97149
-51.66
0.85217
23.98
0.98187
42.91
4.0
0.99541
23.85
0.27526
16.18
0.96801
-57.48
0.78439
25.69
0.97076
41.20
4.1
0.99675
21.53
0.30017
21.62
0.96214
-63.64
0.91321
26.53
0.98240
39.66
4.2
0.99695
19.34
0.33169
24.71
0.95817
-70.37
0.95402
19.53
0.98870
37.44
4.3
0.99709
17.08
0.36614
25.86
0.95218
-77.52
0.95927
14.12
0.99033
35.21
4.4
0.99625
14.89
0.40041
25.61
0.94464
-85.24
0.95907
9.50
0.99064
33.12
4.5
0.99600
12.71
0.43430
24.41
0.93766
-93.67
0.95776
5.12
0.99008
31.05
4.6
0.99528
10.53
0.46785
22.33
0.92733
-102.87
0.95648
0.78
0.98931
29.00
4.7
0.99356
8.29
0.49729
18.61
0.90989
-112.87
0.95538
-3.70
0.98729
26.91
4.8
0.98985
6.02
0.50830
15.70
0.89316
-122.91
0.95299
-8.40
0.98183
24.79
4.9
0.98183
3.77
0.53008
12.03
0.87835
-135.47
0.94875
-13.35
0.96994
22.79
5.0
0.96606
1.91
0.51899
5.22
0.76901
-147.15
0.94290
-18.71
0.94954
21.59
5.1
0.95907
1.19
0.48184
8.12
0.80492
-149.68
0.93754
-24.50
0.95096
21.58
5.2
0.97380
-0.08
0.51026
7.72
0.86212
-162.69
0.93242
-31.40
0.96888
20.35
5.3
0.98447
-2.18
0.52064
4.75
0.87712
-176.53
0.92307
-39.86
0.97525
18.47
5.4
0.98993
-4.47
0.51978
2.19
0.88096
170.41
0.90396
-50.55
0.98503
17.01
5.5
0.99206
-6.71
0.51313
-0.14
0.88478
157.90
0.86790
-64.94
0.99094
14.98
5.6
0.99234
-8.95
0.50465
-2.02
0.89099
145.89
0.79942
-85.01
0.99192
13.15
5.7
0.99149
-11.15
0.49217
-3.82
0.89655
134.39
0.69417
-115.75
0.99221
11.35
5.8
0.98990
-13.42
0.47394
-5.03
0.90165
123.67
0.55561
-163.96
0.99216
9.58
5.9
0.98628
-15.52
0.45693
-5.12
0.90854
113.69
0.51158
134.06
0.99070
7.95
6.0
0.98532
-17.49
0.44346
-4.72
0.91522
104.42
0.59033
85.74
0.98983
6.41
MSOP-8EP (Downset Lead)
Note:
All dimensions per JEDEC MO-187 Var. AA (issue B)
except for D1, E2, and A1. See JEDEC or contact M/A-COM
for additional dimensional and tolerance information.
Dim
Measurement (mm)
Min.
Max.
Min.
Max.
A
0.80
1.10
0.0315
0.0433
A1
0.26
0.076
0.0010
0.0030
A2
0.75
0.95
0.0295
0.0374
b
0.25
0.40
0.0098
0.0157
D
2.90
3.10
0.1142
0.1220
E
4.90
basic
4.90
basic
0.1929
basic
0.1929
basic
E1
2.90
3.10
0.1142
0.1220
e
0.65
basic
0.65
basic
0.0256
basic
0.0256
basic
L
0.40
0.70
0.0157
0.0276
Theta
(
)
0
o
6
o
0
o
6
o
Measurement (inches)
D1
1.85 ref.
1.85 ref. 0.073 ref. 0.073 ref.
E2
1.73 ref.
1.73 ref. 0.068 ref. 0.068 ref.
MSOP-8
15
MAX
L
Theta
PIN 8
PIN 1
E1
E
e
D
A1
A
b
A2
D1
E2
EXPOSED PAD
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