The RF MOSFET Line
RF Power Field-Effect Transistor
NChannel EnhancementMode MOSFET
Designed for broadband commercial and military applications at frequencies
to 175 MHz. The high power, high gain and broadband performance of this
device makes possible solid state transmitters for FM broadcast or TV channel
frequency bands.
Guaranteed Performance at 175 MHz, 28 V:
Output Power -- 300 W
Gain -- 12 dB (14 dB Typ)
Efficiency -- 50%
Low Thermal Resistance -- 0.35
C/W
Ruggedness Tested at Rated Output Power
Nitride Passivated Die for Enhanced Reliability
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainSource Voltage
V
DSS
65
Vdc
DrainGate Voltage
V
DGO
65
Vdc
GateSource Voltage
V
GS
40
Vdc
Drain Current -- Continuous
I
D
32
Adc
Total Device Dissipation @ T
C
= 25
C
Derate above 25
C
P
D
500
2.85
Watts
W/
C
Storage Temperature Range
T
stg
65 to +150
C
Operating Junction Temperature
T
J
200
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
0.35
C/W
NOTE -- CAUTION -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
MRF141G
300 W, 28 V, 175 MHz
NCHANNEL
BROADBAND
RF POWER MOSFET
CASE 37504, STYLE 2
D
G
S
(FLANGE)
D
G
Order this document
by MRF141G/D
SEMICONDUCTOR TECHNICAL DATA
1
REV 3
ELECTRICAL CHARACTERISTICS
(T
C
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (1)
DrainSource Breakdown Voltage
(V
GS
= 0, I
D
= 100 mA)
V
(BR)DSS
65
--
--
Vdc
Zero Gate Voltage Drain Current
(V
DS
= 28 V, V
GS
= 0)
I
DSS
--
--
5.0
mAdc
GateBody Leakage Current
(V
GS
= 20 V, V
DS
= 0)
I
GSS
--
--
1.0
Adc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(V
DS
= 10 V, I
D
= 100 mA)
V
GS(th)
1.0
3.0
5.0
Vdc
DrainSource OnVoltage
(V
GS
= 10 V, I
D
= 10 A)
V
DS(on)
0.1
0.9
1.5
Vdc
Forward Transconductance
(V
DS
= 10 V, I
D
= 5.0 A)
g
fs
5.0
7.0
--
mhos
DYNAMIC CHARACTERISTICS (1)
Input Capacitance
(V
DS
= 28 V, V
GS
= 0, f = 1.0 MHz)
C
iss
--
350
--
pF
Output Capacitance
(V
DS
= 28 V, V
GS
= 0, f = 1.0 MHz)
C
oss
--
420
--
pF
Reverse Transfer Capacitance
(V
DS
= 28 V, V
GS
= 0, f = 1.0 MHz)
C
rss
--
35
--
pF
FUNCTIONAL TESTS (2)
Common Source Amplifier Power Gain
(V
DD
= 28 V, P
out
= 300 W, I
DQ
= 500 mA, f = 175 MHz)
G
ps
12
14
--
dB
Drain Efficiency
(V
DD
= 28 V, P
out
= 300 W, f = 175 MHz, I
D
(Max) = 21.4 A)
45
55
--
%
Load Mismatch
(V
DD
= 28 V, P
out
= 300 W, I
DQ
= 500 mA, f = 175 MHz,
VSWR 5:1 at all Phase Angles)
No Degradation in Output Power
NOTES:
1. Each side measured separately.
2. Measured in pushpull configuration.
2
REV 3
Figure 1. 175 MHz Test Circuit
C1 -- Arco 402, 1.520 pF
C2 -- Arco 406, 15115 pF
C3, C4, C8, C9, C10 -- 1000 pF Chip
C5, C11 -- 0.1
F Chip
C6 -- 330 pF Chip
C7 -- 200 pF and 180 pF Chips in Parallel
C12 -- 0.47
F Ceramic Chip, Kemet 1215 or Equivalent
C13 -- Arco 403, 3.035 pF
L1 -- 10 Turns AWG #16 Enameled Wire,
L1 --
Close Wound, 1/4
I.D.
L2 -- Ferrite Beads of Suitable Material for
L2 --
1.52.0
H Total Inductance
R1 -- 100 Ohms, 1/2 W
R2 -- 1.0 kOhm, 1/2 W
Unless Otherwise Noted, All Chip Capacitors are ATC Type 100 or Equivalent.
T1 -- 9:1 RF Transformer. Can be made of 1518 Ohms
T1 --
Semirigid CoAx, 6290 Mils O.D.
T2 -- 1:9 RF Transformer. Can be made of 1518 Ohms
T2 --
Semirigid CoAx, 7090 Mils O.D.
Board Material -- 0.062
Fiberglass (G10),
1 oz. Copper Clad, 2 Sides,
r
= 5
NOTE: For stability, the input transformer T1 must be loaded
NOTE:
with ferrite toroids or beads to increase the common
NOTE:
mode inductance. For operation below 100 MHz. The
NOTE:
same is required for the output transformer.
See pictures for construction details.
Figure 2. DC Safe Operating Area
Figure 3. GateSource Voltage versus
Case Temperature
TYPICAL CHARACTERISTICS
R1
C4
C5
+
-
BIAS 0-6 V
C2
INPUT
C1
C3
T1
C6
C7
T2
C8 C9
L1
C10 C11
L2
C12
+
-
28 V
OUTPUT
C13
100
10
1
1
10
100
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
I D
, DRAIN CURRENT
(AMPS)
T
C
= 25
C
V GS
, GA
TESOURCE VOL
T
AGE (NORMALIZED)
1.04
-25
T
C
, CASE TEMPERATURE (
C)
1.03
1.02
1.01
1
0.99
0.98
0.97
0.96
0.95
0.94
0.93
0.92
0.91
0.9
0
25
50
75
100
I
D
= 5 A
4 A
2 A
1 A
0.5 A
0.25 A
DUT
HIGH
IMPEDANCE
WINDINGS
CENTER
TAP
4:1
IMPEDANCE
RATIO
9:1
IMPEDANCE
RATIO
CONNECTIONS
TO LOW
IMPEDANCE
WINDINGS
CENTER
TAP
3
REV 3
Figure 4. Common Source Unity Gain Frequency
versus Drain Current
Figure 5. Capacitance versus
DrainSource Voltage
Figure 6. Power Gain versus Frequency
TYPICAL CHARACTERISTICS
Figure 7. Output Power versus Supply Voltage
2000
0
I
D
, DRAIN CURRENT (AMPS)
2
4
6
8
10
12
14
16
18
20
0
10
20
5
15
25
1000
0
2000
200
20
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
= 20 V
10 V
NOTE: Data shown applies to each half of MRF141G.
f, UNITY
GAIN FREQUENCY
(MHz)
T
C, CAP
ACIT
ANCE (pF)
NOTE: Data shown applies to each half of MRF141G.
C
oss
C
iss
C
rss
G
PS
, POWER GAIN (dB)
30
f, FREQUENCY (MHz)
2
25
20
15
10
5
5
10
30
100
200
V
DD
= 28 V
I
DQ
= 2 x 250 mA
P
out
= 300 W
400
SUPPLY VOLTAGE (VOLTS)
12
P
, OUTPUT
POWER (W
A
TTS)
out
350
300
250
200
150
100
50
0
14
16
18
20
22
24
26
28
Figure 8. Input and Output Impedances
f = 175 MHz
I
DQ
= 250 mA x 2
P
in
= 30 W
20 W
10 W
Z
o
= 10
f = 175 MHz
INPUT, Z
in
(GATE TO GATE)
30
100
150
125
30
f = 175 MHz
150
125
100
OUTPUT, Z
OL
*
(DRAIN TO DRAIN)
Z
OL
* = Conjugate of the optimum load impedance
Z
OL
* =
into which the device output operates at a
Z
OL
* =
given output power, voltage and frequency.
4
REV 3
NOTE: SParameter data represents measurements taken from one chip only.
Table 1. Common Source SParameters (V
DS
= 24 V, I
D
= 0.57 A)
f
S
11
S
21
S
12
S
22
f
MHz
|S
11
|
|S
21
|
|S
12
|
|S
22
|
30
0.845
174
4.88
78
0.014
5
0.939
174
40
0.867
174
3.23
66
0.013
14
0.856
172
50
0.876
174
2.62
62
0.013
17
0.868
175
60
0.883
174
2.12
59
0.012
15
0.938
176
70
0.890
175
1.85
58
0.012
12
1.036
177
80
0.899
175
1.57
56
0.011
10
1.110
177
90
0.909
175
1.36
50
0.010
11
1.190
176
100
0.920
176
1.13
43
0.009
13
1.160
176
110
0.930
176
0.95
37
0.007
16
1.100
177
120
0.938
176
0.78
33
0.007
11
1.010
175
130
0.944
176
0.67
31
0.006
3
0.954
176
140
0.948
177
0.60
31
0.006
10
0.964
177
150
0.951
177
0.56
32
0.005
23
1.023
178
160
0.954
178
0.52
32
0.005
31
1.130
179
170
0.958
178
0.48
29
0.006
37
1.190
178
180
0.962
178
0.45
24
0.006
39
1.260
179
190
0.965
179
0.40
17
0.007
41
1.200
180
200
0.968
179
0.34
15
0.008
49
1.090
179
210
0.970
179
0.30
15
0.008
60
0.980
178
220
0.972
180
0.27
15
0.008
68
0.960
177
230
0.973
180
0.25
17
0.008
68
1.045
179
240
0.974
180
0.24
20
0.009
67
1.030
179
250
0.975
180
0.24
19
0.011
68
1.100
179
260
0.977
179
0.21
17
0.012
69
1.200
179
270
0.978
179
0.22
13
0.013
72
1.210
177
280
0.979
179
0.19
13
0.012
72
1.170
177
290
0.979
178
0.17
1
0.012
68
1.040
180
300
0.980
178
0.16
8
0.013
65
0.998
179
310
0.980
178
0.16
13
0.015
70
0.977
179
320
0.981
178
0.16
15
0.017
76
0.979
178
330
0.982
177
0.13
10
0.017
83
1.033
178
340
0.982
177
0.15
19
0.016
81
1.110
176
350
0.982
177
0.13
16
0.016
73
1.140
177
360
0.983
177
0.13
8
0.020
63
1.150
177
370
0.982
176
0.10
6
0.023
65
1.120
176
380
0.982
176
0.10
7
0.023
72
1.050
177
390
0.982
176
0.10
10
0.021
81
0.993
177
400
0.982
176
0.09
14
0.018
83
0.959
179
410
0.983
175
0.10
12
0.020
71
1.040
176
420
0.983
175
0.09
16
0.025
65
1.090
174
430
0.984
175
0.09
15
0.028
70
1.100
174
5
REV 3
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