THRU
10 Am p
Schott ky Barrier
Rectifier
Features
Maximum Ratings
Operating Temperature: -55
C to +150
C
Storage Temperature: -55
C to +175
C
Microsemi
Catalog
Number
Device
Marking
Maximum
Recurrent
Peak
Reverse
Voltage
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
M C C
!"#
$
% !"#
INCHES MM
A .560 .625 14.22 15.88
B .380 .420 9.65 10.67
C .100 .135 2.54 3.43
D .230 .270 5.84 6.86
E .380 .420 9.65 10.67
F ------ .250 ------ 6.35
G .500 .580 12.70 14.73
H .090 .110 2.29 2.79
I .020 .045 0.51 1.14
J .012 .025 0.30 0.64
K .139 .161 3.53 4.09
L .140 .190 3.56 4.83
M .045 .055 1.14 1.40
N .080 .115 2.03 2.92
PIN 1
PIN 3
PIN 2
CASE
A
B
C
K
J
I
H
G
F
E
D
N
M
L
H
TO-220AB
PIN
1
3
2
Maximum Forward
Voltage Drop Per
Element
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
*Pulse test: Pulse width 300
sec, Duty cycle
2%
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.
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.com
Metal of siliconrectifier, majonty carrier conducton
Guard ring for transient protection
Low power loss high efficiency
High surge capacity, High current capability
80-100 Volts
T
J
= 125
C
Peak Forward Surge
Current
I
FSM
120A 8.3ms, half sine
15mA
0.2mA T
J
= 25
C
V
F
.85V
.75V
MBR10100CT
MBR10100CT
100V 70V 100V
MBR1080CT
MBR1080CT
80V 56V 80V
MBR1080CT
MBR10100CT
Electrical Characteristics @ 25
C Unless Otherwise Specified
Average Forward
Current
I
F(AV)
10A T
C
= 100
C
T
J
=
125
C
I
FM
= 5A
T
J
=
25
C
Typical Junction
Capacitance
300pF
C
J
Measured at
1.0MHz, V
R
=4.0V
IR
RATING AND CHARACTERISTIC CURVES
MBR10
80CT
thru MBR 10100CT
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
NUMBER OF CYCLES AT 60Hz
P
E
A
K
F
O
R
W
ARD
S
U
R
G
E CURRENT
,
AM
PERES
1
5
10
50
100
2
20
0
25
50
75
100
12
0
1
40
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERA
G
E
F
O
R
W
A
R
D
C
U
R
R
E
N
T
A
M
P
E
R
E
S
25
75
100
125
150
4
0
50
16
175
PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%)
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
I
N
ST
AN
T
A
N
E
O
U
S
R
E
V
E
R
S
E
CU
RR
E
N
T
,
(
mA
)
20
40
120
140
0.001
0.1
1.0
100
10
60
80
100
0.01
T
J
= 25 C
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
12
0
8
RESISTIVE OR
INDUCTIVE LOAD
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
I
N
S
T
A
N
T
A
NEOUS
F
O
RW
ARD C
U
R
R
E
N
T
,(
A
)
0.2
0.3
0.7
0.8
1.0
10
100
0.4
0.5
0.6
0.1
1.0
0.9
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
I
N
S
T
A
N
T
A
NEOUS
F
O
RW
ARD C
U
R
R
E
N
T
,(
A
)
0.1
1.0
10
100
0.1
PULSE WIDTH 300us
2% Duty cycle
T
J
= 25 C
CASE TEMPERATURE , C
0
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mccsemi
.com
M C C
FIG.5 - TYPICAL JUNCTION CAPACITANCE
CA
PA
CIT
A
N
C
E
,
(
p
F
)
REVERSE VOLTAGE , VOLTS
10
1
100
1000
100
10
0.1
4
T
J
= 25 C, f= 1MHz
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