MPSA13
MPSA14
NPN Silicon
Darlington Transistor
TO-92
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.175
.185
4.45
4.70
B
.175
.185
4.46
4.70
C
.500
---
12.7
---
D
.016
.020
0.41
0.63
E
.135
.145
3.43
3.68
G
.095
.105
2.42
2.67
Features
Capable of 1.5Watts of Power Dissipation.
Collector-current 500mA
Collector-base Voltage 30V
Operating and storage junction temperature range: -55
O
C to +150
O
C
Maximum Ratings
Symbol
Rating
Rating
Unit
V
CES
Collector-Emitter Voltage 30 V
V
CBO
Collector-Base Voltage 30 V
V
EBO
Emitter-Base Voltage 10 V
I
C
Collector Current Continuous 500 mA
P
D
Total Device Dissipation @T
A
=25
O
C
Derate above 25
O
C
625
5.0
mW
mW/
O
C
P
D
Total Device Dissipation @T
A
=25
O
C
Derate above 25
O
C
1.5
12
W
mW/
O
C
T
J
Junction Temperature -55 to +150
O
C
T
STG
Storage Temperature -55 to +150
O
C
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V
(BR)CES
Collector-Emitter Breakdown Voltage
(I
C
=100uAdc, I
B
=0)
30 Vdc
I
CBO
Collector Cutoff Current
(V
CB
=30Vdc, I
E
=0)
100 nAdc
I
EBO
Emitter Cutoff Current
(V
EB
=10Vdc, I
C
=0)
100 nAdc
ON CHARACTERISTICS
(1)
h
FE(1)
DC Current Gain
(I
C
=10mAdc, V
CE
=5.0Vdc) MPSA13
MPSA14
5000
10000
h
FE(2)
DC Current Gain
(I
C
=100mAdc, V
CE
=5.0Vdc) MPSA 13
MPSA14
10000
20000
V
CE(sat)
Collector-Emitter Saturation Voltage
(I
C
=100mAdc, I
B
=0.1mAdc)
1.5
Vdc
V
BE(on)
Base-Emitter Saturation Voltage
(I
C
=100mAdc, V
CE
=5.0Vdc)
2.0
Vdc
SMALL-SIGNAL CHARACTERISTICS
f
T
Current-Gain Bandwidth Product
(2)
(I
C
=10mAdc, V
CE
=5.0Vdc, f=100MHz)
125
MHz
1. Pulse Test: Pulse Width<300us, Duty Cycle<2.0%
2.
f
T
=|h
fe
| x f
test
A
E
B
C
D
G
Pin Configuration
Bottom View
C B E
omponents
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Figure 2. Noise Voltage
f, FREQUENCY (Hz)
50
100
200
500
20
Figure 3. Noise Current
f, FREQUENCY (Hz)
Figure 4. Total Wideband Noise Voltage
R
S
, SOURCE RESISTANCE (k
)
Figure 5. Wideband Noise Figure
R
S
, SOURCE RESISTANCE (k
)
5.0
50
70
100
200
30
10
20
1.0
10
10
20
50 100 200 500 1 k 2 k
5 k 10 k 20 k 50 k 100 k
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
BANDWIDTH = 1.0 Hz
R
S
0
I
C
= 1.0 mA
100
A
10
A
BANDWIDTH = 1.0 Hz
I
C
= 1.0 mA
100
A
10
A
e n
, NOISE VOL
T
AGE (nV)
i n
, NOISE CURRENT
(pA)
2.0
5.0
10
20
50
100 200
500
1000
BANDWIDTH = 10 Hz TO 15.7 kHz
I
C
= 10
A
100
A
1.0 mA
8.0
10
12
14
6.0
0
4.0
1.0
2.0
5.0
10
20
50 100
200
500 1000
2.0
BANDWIDTH = 10 Hz TO 15.7 kHz
10
A
100
A
I
C
= 1.0 mA
V T
,
T
O
T
A
L
WIDEBAND NOISE VOL
T
AGE (nV)
NF
, NOISE FIGURE (dB)
10 20
50 100 200 500 1 k 2 k
5 k 10 k 20 k 50 k 100 k
R
S
i
n
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
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MPSA13 thru MPSA14
Figure 6. Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
5.0
7.0
10
20
3.0
Figure 7. High Frequency Current Gain
I
C
, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
Figure 9. Collector Saturation Region
I
B
, BASE CURRENT (
A)
2.0
200 k
5.0
0.04
4.0
2.0
1.0
0.8
0.6
0.4
0.2
T
J
= 25
C
C, CAP
ACIT
ANCE (pF)
1.5
2.0
2.5
3.0
1.0
0.5
|h
fe
|, SMALL-SIGNAL
CURRENT
GAIN
h FE
, DC CURRENT
GAIN
V CE
, COLLECT
OR-EMITTER VOL
T
AGE (VOL
TS)
0.1
0.2
0.4
1.0 2.0
4.0
10
20
40
C
ibo
C
obo
0.5
1.0
2.0
0.5
10
20
50
100 200
500
V
CE
= 5.0 V
f = 100 MHz
T
J
= 25
C
100 k
70 k
50 k
30 k
20 k
10 k
7.0 k
5.0 k
3.0 k
2.0 k
7.0 10
20
30
50 70 100
200 300
500
T
J
= 125
C
25
C
-55
C
V
CE
= 5.0 V
0.1 0.2 0.5 1.0 2.0
5.0 10 20 50 100 200 500 1000
T
J
= 25
C
I
C
= 10 mA 50 mA
250 mA 500 mA
Figure 10. "On" Voltages
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Temperature Coefficients
I
C
, COLLECTOR CURRENT (mA)
1.6
5.0
-1.0
V
,
VOL
T
AGE (VOL
TS)
1.4
1.2
1.0
0.8
0.6
7.0
10
20 30
50 70 100 200 300
500
V
BE(sat)
@ I
C
/I
B
= 1000
R
V,
TEMPERA
TURE COEFFICIENTS (mV/
C)
T
J
= 25
C
V
BE(on)
@ V
CE
= 5.0 V
V
CE(sat)
@ I
C
/I
B
= 1000
-2.0
-3.0
-4.0
-5.0
-6.0
5.0 7.0 10
20 30
50 70 100
200 300
500
25
C TO 125
C
-55
C TO 25
C
*R
qVC
FOR V
CE(sat)
q
VB
FOR V
BE
25
C TO 125
C
-55
C TO 25
C
*APPLIES FOR I
C
/I
B
h
FE
/3.0
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MPSA13 thru MPSA14
Figure 12. Thermal Response
t, TIME (ms)
1.0
r(t), TRANSIENT
THERMAL
2.0
5.0
1.0
0.5
0.2
0.1
RESIST
ANCE (NORMALIZED)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
20
50
10
200
500
100
1.0 k
2.0 k
5.0 k 10 k
Figure 13. Active Region Safe Operating Area
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0 k
0.4
700
500
300
200
100
70
50
30
20
10
0.6
1.0
2.0
4.0 6.0
10
20
40
I C
, COLLECT
OR CURRENT
(mA)
T
A
= 25
C
D = 0.5
0.2
0.1
0.05
SINGLE PULSE
SINGLE PULSE
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
Z
JC(t)
= r(t)
R
JC
T
J(pk)
- T
C
= P
(pk)
Z
JC(t)
Z
JA(t)
= r(t)
R
JA
T
J(pk)
- T
A
= P
(pk)
Z
JA(t)
1.0 ms
100
s
T
C
= 25
C
1.0 s
Design Note: Use of Transient Thermal Resistance Data
FIGURE A
t
P
P
P
P
P
t
1
1/f
DUTY CYCLE + t1 f +
t1
tP
PEAK PULSE POWER = P
P
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MPSA13 thru MPSA14
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