Features
l
Through Hole Package
l
150
o
C Junction Temperature
Mechanical Data
l
Case: TO-92, Molded Plastic
l
Marking:
MPSA42 --------- A42
MPSA43 --------- A43
Maximum Ratings @ 25
o
C Unless Otherwise Specified
Charateristic Symbol Value Unit
Collector-Emitter Voltage MPSA42
MPSA43
V
CEO
300
200
V
Collector-Base Voltage MPSA42
MPSA43
V
CBO
300
200
V
Emitter-Base Voltage MPSA42
MPSA43
V
EBO
5.0 V
Collector Current(DC) I
C
300 mA
Power Dissipation@T
A
=25
o
C P
d
625
5.0
mW
mW/
o
C
Power Dissipation@T
C
=25
o
C P
d
1.5
12
W
mW/
o
C
Thermal Resistance, Junction to
Ambient Air
200
o
C/W
Thermal Resistance, Junction to
Case
83.3
o
C/W
Operating & Storage Temperature T
j
, T
STG
-55~150
o
C
MPSA42
THRU
MPSA43
NPN Silicon High
Voltage Transistor
625mW
Pin Configuration
Bottom View
C B
E
TO-92
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.175
.185
4.45
4.70
B
.175
.185
4.46
4.70
C
.500
---
12.7
---
D
.016
.020
0.41
0.63
E
.135
.145
3.43
3.68
G
.095
.105
2.42
2.67
A
E
B
C
D
G
DIMENSIONS
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q
JC
R
q
JA
omponents
21201 Itasca Street Chatsworth
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% !"#
M C C
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
MPSA42
MPSA43
V(BR)CEO
300
200
--
--
Vdc
Collector Base Breakdown Voltage
(IC = 100
m
Adc, IE = 0)
MPSA42
MPSA43
V(BR)CBO
300
200
--
--
Vdc
Emitter Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
V(BR)EBO
5.0
--
Vdc
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
MPSA42
(VCB = 160 Vdc, IE = 0)
MPSA43
ICBO
--
--
0.25
0.1
Adc
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
MPSA42
(VEB = 4.0 Vdc, IC = 0)
MPSA43
IEBO
--
--
0.25
0.1
Adc
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 50 mAdc, VCE = 10 Vdc)
hFE
25
80
25
--
250
--
Collector Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
MPSA42
MPSA43
VCE(sat)
--
--
0.5
0.4
Vdc
BaseEmitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
VBE(sat)
--
0.9
Vdc
SMALL SIGNAL CHARACTERISTICS
Current Gain -- Bandwidth Product
(IC = 10 mAdc, VCE = 5 Vdc, f = 30MHz)
fT
50
--
MHz
CollectorBase Capacitance
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)
MPSA42
MPSA43
Ccb
--
--
3.0
4.0
pF
1. Pulse Test: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
M C C
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MPSA42 thru MPSA43
C, CAP
ACIT
ANCE
(pF)
Figure 1. DC Current Gain
VR, REVERSE VOLTAGE (VOLTS)
0.1
100
0.1
10
1.0
10
1000
Ceb @ 1MHz
Figure 2. Capacitance
IC, COLLECTOR CURRENT (mA)
100
70
50
30
20
10
7.0
5.0
3.0
2.0
80
70
50
30
20
10
TJ = 25
C
VCE = 20 V
f = 20 MHz
f
,
CURRENTGAIN -- BANDWIDTH (MHz)
T
1.0
IC, COLLECTOR CURRENT (mA)
Figure 3. CurrentGain Bandwidth
V
,
VOL
T
AGE
(VOL
TS)
1.4
0.0
1.2
1.0
0.8
0.6
0.4
0.2
100
10
0.1
1.0
100
1.0
Ccb @ 1MHz
60
40
VBE(on) @ 25
C, VCE = 10 V
VCE(sat) @ 25
C, IC/IB = 10
VBE(sat) @ 25
C, IC/IB = 10
VCE(sat) @ 125
C, IC/IB = 10
VCE(sat) @ 55
C, IC/IB = 10
VBE(sat) @ 125
C, IC/IB = 10
VBE(sat) @ 55
C, IC/IB = 10
VBE(on) @ 125
C, VCE = 10 V
VBE(on) @ 55
C, VCE = 10 V
Figure 4. "ON" Voltages
IC, COLLECTOR CURRENT (mA)
120
0.1
1.0
10
100
80
60
0
h
FE
, DC CURRENT
GAIN
TJ = +125
C
25
C
55
C
VCE = 10 Vdc
100
20
40
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M C C
MPSA42 thru MPSA43
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