PN2222A
NPN General
Purpose Amplifier
TO-92
Features
Through Hole Package
Capable of 600mWatts of Power Dissipation
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.175
.185
4.45
4.70
B
.175
.185
4.46
4.70
C
.500
---
12.7
---
D
.016
.020
0.41
0.63
E
.135
.145
3.43
3.68
G
.095
.105
2.42
2.67
Electrical Characteristics @ 25
C Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
(I
C
=10mAdc, I
B
=0)
40
Vdc
V
(BR)CBO
Collector-Base Breakdown Voltage
(I
C
=10
Adc, I
E
=0)
75
Vdc
V
(BR)EBO
Emitter-Base Breakdown Voltage
(I
E
=10
Adc, I
C
=0)
6.0
Vdc
I
BL
Base Cutoff Current
(V
CE
=60Vdc, V
BE
=3.0Vdc)
20
nAdc
I
CEX
Collector Cutoff Current
(V
CE
=60Vdc, V
BE
=3.0Vdc)
10
nAdc
ON CHARACTERISTICS
h
FE
DC Current Gain*
(I
C
=0.1mAdc, V
CE
=10Vdc)
(I
C
=1.0mAdc, V
CE
=10Vdc)
(I
C
=10mAdc, V
CE
=10Vdc)
(I
C
=150mAdc, V
CE
=10Vdc)
(I
C
=150mAdc, V
CE
=1.0Vdc)
(I
C
=500mAdc, V
CE
=10Vdc)
35
50
75
100 300
50
40
V
CE(sat)
Collector-Emitter Saturation Voltage
(I
C
=150mAdc, I
B
=15mAdc)
(I
C
=500mAdc, I
B
=50mAdc)
0.3
1.0
Vdc
V
BE(sat)
Base-Emitter Saturation Voltage
(I
C
=150mAdc, I
B
=15mAdc)
(I
C
=500mAdc, I
B
=50mAdc)
0.6
1.2
2.0
Vdc
SMALL-SIGNAL CHARACTERISTICS
f
T
Current Gain-Bandwidth Product
(I
C
=20mAdc, V
CE
=20Vdc, f=100MHz)
300
MHz
C
obo
Output Capacitance
(V
CB
=10Vdec, I
E
=0, f=100kHz)
8.0
pF
C
ibo
Input Capacitance
(V
BE
=0.5Vdc, I
C
=0, f=100kHz)
25
pF
NF
Noise Figure
(I
C
=100
Adc, V
CE
=10Vdc, R
S
=1.0k
f=1.0kHz)
4.0
dB
SWITCHING CHARACTERISTICS
t
d
Delay Time
(V
CC
=30Vdc, V
BE
=0.5Vdc
10
ns
t
r
Rise Time
I
C
=150mAdc, I
B1
=15mAdc)
25
ns
t
s
Storage Time
(V
CC
=30Vdc, I
C
=150mAdc
225
ns
t
f
Fall Time
I
B1
=I
B2
=15mAdc)
60
ns
*Pulse Width
300
s, Duty Cycle
2.0%
Pin Configuration
Bottom View
C B
E
A
E
B
C
D
G
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M C C
PN2222A
DC Current Gain vs Collector Current
h
FE
I
C
(mA)
80
160
240
320
400
480
0.1
1
10
100
Input and Output Capacitance vs
Reverse Bias Voltage
Volts - (V)
pF
2
4
6
8
10
12
0.1
1.0
10
C
OB
C
IB
f = 1.0MHz
Maximum Power Dissipation vs
Ambient Temperature
P
D(MAX)
- (mW)
T
A
- (
C)
TO-92
SOT-23
0
200
400
600
800
0
50
100
150
200
V
CE
= 5.0V
Collector Current vs
Collector-Emitter Voltage
I
C
- (mA)
V
CE
- (V)
I
B
= 2mA
I
B
= 1mA
50
100
150
200
250
0
.5
1.0
1.5
2.0
Collector Current vs
Collector-Emitter Voltage
I
C
- (mA)
V
CE
- (V)
35
A
30
A
0
2
4
6
8
10
20
30
40
50
25
A
20
A
15
A
10
A
5
A
I
B
= 3mA
I
B
= 4mA
Contours of Constant Gain
Bandwidth Product (f
T
)
V
CE
- (V)
I
C
- (mA)
0
4
8
12
16
20
24
0.1
1.0
10
100
*50MHz increments from 150
to 250MHz and 260MHz
M C C
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PN2222A
Collector Saturation Voltage vs
Collector Current
V
CE(SAT)
- (V)
I
C
- (mA)
.01
.06
.1
.6
1.0
1.4
0.1
1.0
10
100
T
A
= 125
C
T
A
= 25
C
I
C
/I
B
= 10
I
C
- (mA)
Collector Saturation Voltage vs
Collector Current
V
CE(SAT)
- (V)
T
A
= 25
C
0.1
1.0
10
100
.01
.06
.1
.6
1
4
Base Saturation Voltage vs
Collector Current
V
BE(SAT)
- (V)
0.1
0.6
1
6
10
14
1.0
10
100
1000
I
C
- (mA)
I
C
/I
B
= 10
Switching Times vs
Collector Current
T - (ns)
I
C
- (mA)
1.0
10
100
1000
1.0
10
100
I
B1
= I
B2
= I
C
/10
t
s
t
f
t
r
t
d
Base Saturation Voltage vs
Collector Current
V
BE(SAT)
- (V)
.01
.06
.1
.6
1.0
1.4
1.0
10
100
1000
I
C
- (mA)
h
fe
=10
h
fe
=20
T
A
=25
C
T
A
=125
C
h
fe
=20
hfe=10
M C C
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