MSAGX60F60A
MSAHX60F60A
600 Volts
60 Amps
2.9 Volts vce(sat)
Features
Rugged polysilicon gate cell structure
high current handling capability, latch-proof
Hermetically sealed, surface mount power package
Low package inductance
Very low thermal resistance
Reverse polarity available upon request: MSAH(G)60F60B
high frequency IGBT, low switching losses
anti-parallel FREDiode (MSAHX60F60A only)
DESCRIPTION
SYMBOL
MAX.
UNIT
Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter)
@ T
J
25
C
BV
CES
600
Volts
Collector-to-Gate Breakdown Voltage
@ T
J
25
C, R
GS
= 1 M
BV
CGR
600
Volts
Continuous Gate-to-Emitter Voltage
V
GES
+/-20
Volts
Transient Gate-to-Emitter Voltage
V
GEM
+/-30
Volts
Continuous Collector Current
Tj= 25
C
Tj=
90
C
I
C25
I
C90
60
32
Amps
Peak Collector Current, pulse width limited by T
jmax
,
I
CM
120
Amps
Safe Operating Area (RBSOA)
@ V
GE
= 15V, L= 100
H (clamped inductive
load), R
G
= 4.7
, Tj= 125
C, V
CE
= 0.8 x V
CES
I
max
64
Amps
Power Dissipation
P
D
300
Watts
Junction Temperature Range
T
j
-55 to +150
C
Storage Temperature Range
T
stg
-55 to +150
C
Continuous Source Current (Body Diode, MSAHX60F60A only)
I
S
32
Amps
Pulse Source Current (Body Diode, MSAHX60F60A only)
I
SM
100
Amps
Thermal Resistance, Junction to Case
JC
0.4
C/W
Maximum Ratings @ 25
C (unless otherwise specified)
Mechanical Outline
Datasheet# MSC0298A
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
N-CHANNEL
INSULATED GATE
BIPOLAR TRANSISTOR
COLLECTOR
EMITTER
(MS...A)
GATE (MS...B)
.A)
EMITTER (MS...B)
DESCRIPTION
SYMBOL
CONDITIONS
MIN
TYP.
MAX
UNIT
Collector-to-Emitter Breakdown Voltage
(Gate Shorted to Emitter)
BV
CES
V
GS
= 0 V, I
C
= 250
A
600
V
Gate Threshold Voltage
V
GE(th)
V
CE
= V
GE
, I
C
= 250
A
2.5
5.0
V
Gate-to-Emitter Leakage Current
I
GES
V
GE
=
20V
DC
, V
CE
= 0 T
J
= 25
C
T
J
= 125
C
100
200
nA
Collector-to-Emitter Leakage Current (Zero Gate
Voltage Collector Current)
I
CES
V
CE
=0.8
BV
CES
T
J
= 25
C
V
GE
= 0 V T
J
= 125
C
200
1000
A
Collector-to-Emitter Saturation Voltage (1)
V
CE(sat)
V
GE
= 15V, I
C
= 30A T
J
= 25
C
I
C
= 60A T
J
= 25
C
I
C
= 30A T
J
= 125
C
2.2
3.5
2.2
2.9
V
Forward Transconductance (1)
g
fs
V
CE
10 V; I
C
= 30 A
15
20
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
ies
C
oes
C
res
V
GE
= 0 V, V
CE
= 25 V, f = 1 MHz
2500
230
70
pF
INDUCTIVE LOAD, Tj= 25
C
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Off Energy
t
d(on)
t
ri
t
d(off)
t
fi
E
off
V
GE
= 15 V, V
CE
= 480 V,
I
C
= 30 A, R
G
= 4.7
,
L= 100
H note 2, 3
25
30
175
125
1.3
175
ns
ns
ns
ns
mJ
INDUCTIVE LOAD, Tj= 125
C
Turn-on Delay Time
Rise Time
On Energy
Turn-off Delay Time
Fall Time
Off Energy
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
V
GE
= 15 V, V
CE
= 480 V,
I
C
= 30 A, R
G
= 4.7
,
L= 100
H note 2, 3
25
35
1
250
260
4
ns
ns
mJ
ns
ns
mJ
Total Gate Charge
Gate-to-Emitter Charge
Gate-to-Collector (Miller) Charge
Q
g
Q
ge
Q
gc
V
GE
= 15 V, V
CE
= 300V, I
C
= 30A
125
23
50
150
35
75
nC
Antiparallel diode forward voltage (MSAHX60F60A
only)
V
F
I
E
= 15 A T
J
= 25
C
I
E
= 15 A T
J
= 150
C
I
E
= 30 A T
J
= 25
C
I
E
= 50 A T
J
= 25
C
1.7
1.9
1.5
1.3
V
V
V
V
Antiparallel diode reverse recovery time
(MSAHX60F60A only)
t
rr
I
E
= 10 A, dI
E
/dt= 100 A/us, T
J
= 25
C
I
E
= 30 A, dI
E
/dt= 100 A/us, T
J
= 25
C
140
100
ns
ns
Antiparallel diode reverse recovery charge
(MSAHX60F60A only)
Q
rr
I
E
= 10 A, dI
E
/dt= 100 A/us, T
J
= 25
C
I
E
= 30 A, dI
E
/dt= 100 A/us, T
J
= 25
C
160
320
nC
nC
Antiparallel diode peak recovery current
(MSAHX60F60A only)
I
RM
I
E
= 10 A, dI
E
/dt= 100 A/us, T
J
= 25
C
I
E
= 30 A, dI
E
/dt= 100 A/us, T
J
= 25
C
3
4.2
A
A
Electrical Parameters @ 25
C (unless otherwise specified)
Notes
(1) Pulse test, t
300
s, duty cycle
2%
(2) switching times and losses may increase for larger V
CE
and/or R
G
values or higher junction temperatures.
(3) switching losses include "tail" losses
(4) Microsemi Corp. does not manufacture the igbt die; contact company for details.
MSAGX60F60A
MSAHX60F60A
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