Feb.1999
Conditions
Applied for all conduction angles
f = 60Hz, sine wave
= 180
, T
f
= 65
C
One half cycle at 60Hz, T
j
=125
C
I
FM
= 1500A, V
R
2250V, T
j
= 125
C, With clamp circuit
(Refer to Fig. 1 and Fig. 2)
(Recommended value 47kN)
Typical 1220g
4500
4500
3600
3000
MITSUBISHI SOFT RECOVERY DIODES
FD1500BV-90DA
HIGH POWER, HIGH FREQUENCY,
PRESS PACK TYPE
FD1500BV-90DA
OUTLINE DRAWING
Dimensions in mm
APPLICATION
Free wheel diode for GCT Thyristor
High-power inverters
Power supplies as high frequency rectifiers
I
F(AV)
Average forward current ..................... 1500A
V
RRM
Repetitive peak reverse voltage ................... 4500V
Q
RR
Reverse recovery charge ................. 3600
C
Press pack type
Unit
Symbol
V
RRM
V
RSM
V
R(DC)
V
LTDS
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Long term DC stability voltage at 100FIT
Parameter
V
V
V
V
MAXIMUM RATINGS
Voltage class
2350
1500
30
3.7
10
6
2000
20 ~ 125
40 ~ 150
39 ~ 55
--
RMS forward current
Average forward current
Surge forward current
Current-squared, time integration
Critical rate of rise of reverse
recovery current
Junction temperature
Storage temperature
Mounting force required
Weight
A
A
kA
A
2
s
A/
s
C
C
kN
g
I
F(RMS)
I
F(AV)
I
FSM
I
2
t
d
i
/d
t
T
j
T
stg
--
--
Symbol
Parameter
Unit
Ratings
3.5 0.2
2.2 0.2DEPTH
3.5 0.2
2.2 0.2DEPTH
6.35
10.8
85 0.2
85 0.2
120MAX
12 2
10.5 1
26 0.5
TYPE NAME
0.4MIN
0.4MIN
Feb.1999
Repetitive peak reverse current
Forward voltage
Reverse recovery charge
Reverse recovery loss
Soft recovery rate
Thermal resistance
MITSUBISHI SOFT RECOVERY DIODES
FD1500BV-90DA
HIGH POWER, HIGH FREQUENCY,
PRESS PACK TYPE
I
RRM
V
FM
Q
RR
Erec
tb/ta
R
th(j-f)
mA
V
C
J/P
--
C/W
Symbol
Parameter
Test conditions
Limits
Min.
Typ.
Max.
Unit
ELECTRICAL CHARACTERISTICS
V
RM
= 4500V, T
j
= 125
C
I
FM
= 3400A, T
j
= 125
C
I
FM
= 1500A, d
i
/d
t
= 1000A/
s, V
R
= 2250V,
T
j
= 125
C
With clamp circuit (Refer to Fig. 1 and Fig. 2)
Junction to fin
--
--
--
--
--
--
--
--
--
8.0
2
--
150
3.5
3600
--
--
0.11
Fig. 1 (Definition of reverse recovery waveform)
Fig. 2 (Reverse recovery test circuit)
0
IFM
d
i
/d
t
(0~50%IFM)
50%IFM
50%IRM
90%IRM
Q
RR
= (trr
IRM)/2
trr
ta
tb
IRM
GCT
L(load)
CD
i
CD
i
D
i
D
i
: FD1500BV-90DA
Cc : 6
F
Rc = 2
Lc = 0.3
H
Cc
Cc
Lc
Rc
Rc
Feb.1999
MITSUBISHI SOFT RECOVERY DIODES
FD1500BV-90DA
HIGH POWER, HIGH FREQUENCY,
PRESS PACK TYPE
PERFORMANCE CURVES
0
1
2
3
4
5
6
7
8
10
4
7
5
3
2
10
3
7
5
3
2
10
2
7
5
3
2
10
1
0
500
1000 1500 2000 2500 3000
12
16
20
4
8
10
14
18
2
6
0
0
2 3
10
3
5 710
2
2 3
10
0
5 7 10
1
2 3 5 710
1
2 3 5 7 10
0
0.004
0.006
0.008
0.01
0.012
0.014
0.016
0.018
0.002
FORWARD CURRENT (A)
FORWARD VOLTAGE (V)
MAXIMUM FORWARD CHARACTERISTICS
FORWARD CURRENT I
F
(A)
Erec VS IF
(TYP.)
THERMAL IMPEDANCE (C/
W)
TIME (S)
MAXIMUM THERMAL IMPEDANCE
CHARACTERISTIC
(JUNCTION TO FIN)
REVERSE RECOVERY LOSS Erec (J/P)
0
500
1000 1500 2000 2500 3000
6000
8000
10000
2000
4000
5000
7000
9000
1000
3000
0
FORWARD CURRENT I
F
(A)
Q
RR
VS IF
(TYP.)
REVERSE RECOVERY CHARGE Q
RR
(
C)
T
j
= 125C
T
j
= 25C
CONDITION
VR = 2250V, T
j
=125C
d
i
/d
t
= 1000A/
s
With clamp circuit
With clamp circuit
CONDITION
VR = 2250V, T
j
=125C
d
i
/d
t
= 1000A/
s
PDF 
ZIP