Aug. 1999
PIN CONFIGURATION
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54563P/FP
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54563FP is an eight-circuit output-sourcing Darlington
transistor array. The circuits are made of PNP and NPN tran-
sistors. This semiconductor integrated circuit performs high-
current driving with extremely low input-current supply.
FEATURES
High breakdown voltage (BV
CEO
50V)
High-current driving (Io(max) = 500mA)
With clamping diodes
Driving available with PMOS IC output of 6 ~ 16V or with TTL output
Wide operating temperature range (Ta = 20 to +75
C)
Output current-sourcing type
APPLICATION
Drives of relays, printers, LEDs, fluorescent display tubes
and lamps, and interfaces between MOS-bipolar logic sys-
tems and relays, solenoids, or small motors
FUNCTION
The M54563P and M54563FP each have eight circuits,
which are made of input inverters and current-sourcing out-
puts. The outputs are made of PNP transistors and NPN
Darlington transistors. The PNP transistor base current is
constant. A clamping diode is provided between each output
and GND. V
S
and GND are used commonly among the eight
circuits.
The inputs have resistance of 3k
, and voltage of up to 10V
is applicable. Output current is 500 mA maximum. Supply
voltage V
S
is 50V maximum.
The M54563FP is enclosed in a molded small flat package,
enabling space-saving design.
CIRCUIT DIAGRAM
1.5K
7.2K
3K
3K
20K
V
S
GND
INPUT
OUTPUT
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit :
The eight circuits share the V
S
and GND.
1
IN1
IN2
IN3
IN4
IN5
IN6
IN7
GND
O8
IN8
V
S
GND
V
S
2
3
4
5
6
7
8
9
18
17
16
15
14
13
12
11
10
O7
O6
O5
O4
O3
O2
O1
1
NC
IN1
IN2
IN3
IN4
IN5
IN6
O8
IN7
IN8
2
3
4
5
6
7
8
9
20
19
18
17
16
15
14
13
12
10
11
O7
O6
O5
O4
O2
O3
O1
NC
NC : No connection
Package type 18P4G(P)
INPUT
OUTPUT
INPUT
OUTPUT
Package type 20P2N-A(FP)
Aug. 1999
min
typ
max
ABSOLUTE MAXIMUM RATINGS
(Unless otherwise noted, Ta = 20 ~ +75
C)
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54563P/FP
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
A
mA
V
A
--
--
--
--
--
--
--
--
I
S (leak) #
I
S
V
F
I
R #
--
--
--
0
2.4
0
V
S
V
IH
V
IL
0.5 ~ +50
50
0.5 ~ +10
500
500
50
1.79(P)/1.10(FP)
20 ~ +75
55 ~ +125
V
CEO #
V
S
V
I
I
O
I
F
V
R #
P
d
T
opr
T
stg
V
V
V
mA
mA
V
W
C
C
V
V
V
50
10
0.2
Parameter
Limits
Symbol
Unit
I
O
0
0
--
--
350
100
mA
V
mA
V
CE (sat)
I
I
100
2.4
2.0
1.0
5.0
15.0
2.4
100
V
S
= 50V, V
I
= 0.2V
V
S
= 10V, V
I
= 2.4V, I
O
= 350mA
V
S
= 10V, V
I
= 2.4V, I
O
= 100mA
V
I
= 3V
V
I
= 10V
V
S
= 50V, V
I
= 3V (all input)
I
F
= 350mA
V
R
= 50V
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
+
max
--
1.6
1.45
0.6
2.9
5.6
1.2
--
ABSOLUTE MAXIMUM RATINGS
(Unless otherwise noted, Ta = 20 ~ +75
C)
Ratings
Unit
Symbol
Parameter
Conditions
Collector-emitter voltage
Supply voltage
Input voltage
Output current
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Output, L
Current per circuit output, H
Ta = 25
C, when mounted on board
# : Unused I/O pins must be connected to GND.
Supply voltage
Duty Cycle
P : no more than 8%
FP : no more than 5%
Duty Cycle
P : no more than 55%
FP : no more than 30%
O u t p u t c u r r e n t
(Current per 1 cir-
cuit when 8 circuits
are coming on si-
multaneously)
"H" input voltage
"L" input voltage
+
: The typical values are those measured under ambient temperature (Ta) of 25
C. There is no guarantee that these values are obtained under any
conditions.
# : Unused I/O pins must be connected to GND.
Supply leak current
Supply current
Clamping diode forward voltage
Clamping diode reverse current
Collector-emitter saturation voltage
Input current
ns
ns
t
on
t
off
--
--
100
4800
--
--
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
Turn-on time
Turn-off time
C
L
= 15pF (note 1)
SWITCHING CHARACTERISTICS
(Unless otherwise noted, Ta = 25
C)
RECOMMENDED OPERATING CONDITIONS
(Unless otherwise noted, Ta = 20 ~ +75
C)
ELECTRICAL CHARACTERISTICS
(Unless otherwise noted, Ta = 20 ~ +75
C)
Aug. 1999
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54563P/FP
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
PG
50
C
L
R
L
V
S
INPUT
OUTPUT
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10
s, tr = 6ns, tf = 6ns, Z
O
= 50
V
I
= 0 to 2.4V
(2) Input-output conditions : R
L
= 30
, V
S
= 10V
(3) Electrostatic capacity C
L
includes floating capacitance at
connections and input capacitance at probes
Measured device
ton
50%
50%
50%
50%
toff
INPUT
OUTPUT
TYPICAL CHARACTERISTICS
Thermal Derating Factor Characteristics
Ambient temperature Ta (C)
M54563FP
M54563P
Power dissipation Pd (W)
0
0
0.5
1.0
1.5
2.0
25
50
75
100
Output Saturation Voltage
Output Current Characteristics
Output saturation voltage V
CE
(sat) (V)
0
200
100
300
400
500
0
0.5
1.0
1.5
2.0
2.5
Output current I
O
(mA)
V
S
= 10V
V
I
= 2.4V
Ta = 75C
Ta = 25C
Ta = 20C
Duty-Cycle-Output Current Characteristics
(M54563P)
Duty cycle (%)
Output current I
O
(mA)
0
200
100
300
400
500
0
20
40
60
80
100
Duty cycle (%)
Output current I
O
(mA)
Duty-Cycle-Output Current Characteristics
(M54563P)
0
200
100
300
400
500
0
20
40
60
80
100
The output current values
represent the current per circuit.
Repeated frequency
10Hz
The value in the circle represents the
value of the simultaneously-operated circuit.
Ta = 25C
The output current values
represent the current per circuit.
Repeated frequency
10Hz
The value in the circle represents the
value of the simultaneously-operated circuit.
Ta = 75C
Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54563P/FP
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
Duty-Cycle-Output Current Characteristics
(M54563FP)
Duty cycle (%)
Output current I
O
(mA)
0
200
100
300
400
500
0
20
40
60
80
100
Duty cycle (%)
Output current I
O
(mA)
Duty-Cycle-Output Current Characteristics
(M54563FP)
0
200
100
300
400
500
0
20
40
60
80
100
0
Ta = 75C
Ta = 25C
Ta = 20C
200
100
300
400
500
0
0.2
0.4
0.6
0.8
1.0
V
S
= 20V
V
S
-V
O
= 4V
Grounded Emitter Transfer Characteristics
Input voltage V
I
(V)
Output current I
O
(mA)
Ta = 75C
Ta = 25C
Ta = 20C
Clamping Diode Characteristics
Forward bias voltage V
F
(V)
0
100
200
300
500
400
0
0.5
1.0
1.5
2.0
Forward bias current I
F
(mA)
Input Characteristics
Input voltage V
I
(V)
0
Ta = 75C
Ta = 25C
Ta = 20C
2
1
3
4
5
0
2
4
6
8
10
Input current I
I
(mA)
V
S
= 20V
Input Characteristics
Input voltage V
I
(V)
0
Ta = 75C
Ta = 25C
Ta = 20C
0.4
0.2
0.6
0.8
1.0
0
1
2
3
4
5
Input current I
I
(mA)
V
S
= 20V
The output current values
represent the current per circuit.
Repeated frequency
10Hz
The value in the circle represents the
value of the simultaneously-operated circuit.
Ta = 25C
The output current values
represent the current per circuit.
Repeated frequency
10Hz
The value in the circle represents the
value of the simultaneously-operated circuit.
Ta = 75C
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