1
Motorola Bipolar Power Transistor Device Data
Darlington Complementary
Silicon Power Transistors
. . . designed for generalpurpose amplifier and lowfrequency switching applica-
tions.
High DC Current Gain @ IC = 10 Adc --
hFE = 2400 (Typ) -- 2N6282, 2N6283, 2N6284
hFE
= 4000 (Typ) -- 2N6285, 2N6286, 2N6287
CollectorEmitter Sustaining Voltage --
VCEO(sus) = 60 Vdc (Min) -- 2N6282, 2N6285
VCEO(sus)
= 80 Vdc (Min) -- 2N6283, 2N6286
VCEO(sus)
= 100 Vdc (Min) -- 2N6284, 2N6287
Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors
*MAXIMUM RATINGS
Rating
Symbol
2N6282
2N6285
2N6283
2N6286
2N6284
2N6287
Unit
CollectorEmitter Voltage
VCEO
60
80
100
Vdc
CollectorBase Voltage
VCB
60
80
100
Vdc
EmitterBase Voltage
VEB
5.0
Vdc
Collector Current -- Continuous
Peak
IC
20
40
Adc
Base Current
IB
0.5
Adc
Total Device Dissipation @ TC = 25
_
C
Derate above 25
_
C
PD
160
0.915
Watts
W/
_
C
Operating and Storage Junction
Temperature Range
TJ,Tstg
65 to + 200
_
C
*THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
1.09
_
C/W
* Indicates JEDEC Registered Data.
25
50
100
125
200
Figure 1. Power Derating
TC, CASE TEMPERATURE (
C)
P
D
, POWER DISSIP
A
TION (W
A
TTS)
160
60
40
140
0
75
150
0
20
80
100
120
175
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 2N6282/D
Motorola, Inc. 1995
DARLINGTON
20 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60, 80, 100 VOLTS
160 WATTS
2N6282
thru
2N6284
2N6285
thru
2N6287
*Motorola Preferred Device
*
*
CASE 107
TO204AA
(TO3)
NPN
PNP
2N6282 thru 2N6284 2N6285 thru 2N6287
2
Motorola Bipolar Power Transistor Device Data
*ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage
(IC = 0.1 Adc, IB = 0)
2N6282, 2N6285
2N6283, 2N6286
2N6284, 2N6287
VCEO(sus)
60
80
100
--
--
--
Vdc
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
2N6282, 2N6285
(VCE = 40 Vdc, IB = 0)
2N6283, 2N6286
(VCE = 50 Vdc, IB = 0)
2N6284, 2N6287
ICEO
--
--
--
1.0
1.0
1.0
mAdc
Collector Cutoff Current
(VCE = Rated VCB, VBE(off) = 1.5 Vdc)
(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TC = 150
_
C)
ICEX
--
--
0.5
5.0
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
--
2.0
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 10 Adc, VCE = 3.0 Vdc)
(IC = 20 Adc, VCE = 3.0 Vdc)
hFE
750
100
18,000
--
--
CollectorEmitter Saturation Voltage
(IC = 10 Adc, IB = 40 mAdc)
(IC = 20 Adc, IB = 200 mAdc)
VCE(sat)
--
--
2.0
3.0
Vdc
BaseEmitter On Voltage
(IC = 10 Adc, VCE = 3.0 Vdc)
VBE(on)
--
2.8
Vdc
BaseEmitter Saturation Voltage
(IC = 20 Adc, IB = 200 mAdc)
VBE(sat)
--
4.0
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter SmallSignal ShortCircuit
Forward Current Transfer Ratio
(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
|hfe|
4.0
--
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
2N6282,83,84
2N6285,86,87
Cob
--
--
400
600
pF
SmallSignal Current Gain
(IC = 10 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
hfe
300
--
--
* Indicates JEDEC Registered Data.
(1) Pulse test: Pulse Width = 300
s, Duty Cycle = 2%
Figure 2. Switching Times Test Circuit
10
0.2
Figure 3. Switching Times
IC, COLLECTOR CURRENT (AMP)
t,
TIME (
s)
7.0
2.0
1.0
0.7
0.5
0.1
0.3
0.7
3.0
20
0.2
1.0
5.0
0.3
3.0
5.0
0.5
2.0
7.0
0
VCC
30 V
SCOPE
TUT
+ 4.0 V
tr, tf
v
10 ns
DUTY CYCLE = 1.0%
RC
D1 MUST BE FAST RECOVERY TYPE e.g.,
1N5825 USED ABOVE IB
[
100 mA
MSD6100 USED BELOW IB
[
100 mA
25
s
D1
51
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
V2
APPROX
+ 8.0 V
V1
APPROX
12 V
[
8.0 k
[
50
FOR td AND tr, D1 IS DISCONNECTED
AND V2 = 0
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES
RB
10
td @ VBE(off) = 0 V
tf
ts
tr
2N6282/84 (NPN)
2N6285/87 (PNP)
VCC = 30 Vdc
IC/IB = 250
IB1 = IB2
TJ = 25
C
2N6282 thru 2N6284 2N6285 thru 2N6287
3
Motorola Bipolar Power Transistor Device Data
Figure 4. Thermal Response
t, TIME OR PULSE WIDTH (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02 0.03
r(t), EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE (NORMALIZED)
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1000
500
R
JC(t) = r(t) R
JC
R
JC = 1.09
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) R
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
SINGLE PULSE
0.2
0.05
0.1
0.02
0.01
0.3
3.0
30
300
ACTIVEREGION SAFE OPERATING AREA
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ TC = 25
C
SINGLE PULSE
50
Figure 5. 2N6282, 2N6285
20
2.0
0.05
50
100
TJ = 200
C
0.2
5.0
0.5
I C
, COLLECT
OR CURRENT
(AMP)
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
10
1.0
0.1
dc
2.0
5.0
20
5.0 ms
1.0 ms
0.5 ms
10
50
Figure 6. 2N6283, 2N6286
20
2.0
0.05
50
100
0.2
5.0
0.5
I C
, COLLECT
OR CURRENT
(AMP)
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
10
1.0
0.1
2.0
5.0
20
10
50
Figure 7. 2N6284, 2N6287
20
2.0
0.05
50
100
0.2
5.0
0.5
I C
, COLLECT
OR CURRENT
(AMP)
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
10
1.0
0.1
2.0
5.0
20
10
0.1 ms
0.1 ms
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ TC = 25
C
SINGLE PULSE
TJ = 200
C
dc
5.0 ms
1.0 ms
0.5 ms
0.1 ms
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ TC = 25
C
SINGLE PULSE
TJ = 200
C
dc
5.0 ms
1.0 ms
0.5 ms
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown.
Safe operating area curves indicate IC VCE limits of the transistor that must be observed for reliable operation; i.e. the transistor
must not be subjected to greater dissipation than the curves indicate.
The data of Figures 5, 6 and 7 is based on TJ(pk) = 200
_
C; TC is variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk) < 200
_
C. TJ(pk) may be calculated from the data in Figure 4. At high case
temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by
second breakdown.
10,000
1.0
Figure 8. SmallSignal Current Gain
f, FREQUENCY (kHz)
10
2.0
5.0 10
20
50 100
200
1000
500
100
5000
h
FE
, SMALLSIGNAL
CURRENT
GAIN
20
200
500
2000
1000
50
TJ = 25
C
VCE = 3.0 Vdc
IC = 10 A
1000
0.1
Figure 9. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
100
1.0
2.0
5.0
20
100
10
C, CAP
ACIT
ANCE (PF)
500
300
200
Cib
Cob
50
0.2
0.5
2N6282/84 (NPN)
2N6285/87 (PNP)
TJ = 25
C
700
2N6282/84 (NPN)
2N6285/87 (PNP)
2N6282 thru 2N6284 2N6285 thru 2N6287
4
Motorola Bipolar Power Transistor Device Data
Figure 10. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
0.2 0.3
0.5 0.7 1.0
2.0
20
500
300
h
FE
, DC CURRENT
GAIN
TJ = 150
C
25
C
55
C
VCE = 3.0 V
200
7.0
NPN
2N6282, 2N6283, 2N6284
PNP
2N6285, 2N6286, 2N6287
20,000
5000
10,000
3000
2000
1000
3.0
5.0
IC, COLLECTOR CURRENT (AMP)
700
500
h
FE
, DC CURRENT
GAIN
TJ = 150
C
25
C
55
C
300
30,000
10,000
20,000
5000
3000
1000
7000
700
10
VCE = 3.0 V
0.2 0.3
0.5 0.7 1.0
2.0
20
7.0
3.0
5.0
10
7000
2000
Figure 11. Collector Saturation Region
V
CE
, COLLECT
OR-EMITTER VOL
T
AGE (VOL
TS)
3.0
IB, BASE CURRENT (mA)
2.6
2.2
1.8
1.4
1.0
V
CE
, COLLECT
OR-EMITTER VOL
T
AGE (VOL
TS)
3.0
IB, BASE CURRENT (mA)
0.5
1.0
2.0 3.0
5.0 7.0
50
2.6
2.2
1.8
1.4
IC = 5.0 A
10 A
15 A
1.0
0.7
30
20
0.5
1.0
2.0 3.0
5.0 7.0
50
0.7
30
20
IC = 5.0 A
10 A
15 A
10
10
TJ = 25
C
TJ = 25
C
IC, COLLECTOR CURRENT (AMP)
VBE(sat) @ IC/IB = 250
V
, VOL
T
AGE (VOL
TS)
Figure 12. "On" Voltages
IC, COLLECTOR CURRENT (AMP)
V
, VOL
T
AGE (VOL
TS)
VBE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
TJ = 25
C
VBE @ VCE = 3.0 V
VCE(sat) @ IC/IB = 250
TJ = 25
C
0.2 0.3
0.5 0.7 1.0
2.0
20
7.0
3.0
5.0
3.0
2.5
2.0
1.5
1.0
0.5
3.0
2.5
2.0
1.5
1.0
0.5
10
0.2 0.3
0.5 0.7 1.0
2.0
20
7.0
3.0
5.0
10
VBE @ VCE = 3.0 V
2N6282 thru 2N6284 2N6285 thru 2N6287
5
Motorola Bipolar Power Transistor Device Data
+ 5.0
Figure 13. Temperature Coefficients
IC, COLLECTOR CURRENT (AMP)
0.2 0.3
1.0
2.0 3.0
5.0 7.0
20
V
,
TEMPERA
TURE COEFFICIENTS (mV/
C)
+ 4.0
+ 3.0
+ 1.0
0
4.0
1.0
2.0
3.0
5.0
VB for VBE
*
VC for VCE(sat)
55
C to + 25
C
25
C to 150
C
25
C to + 150
C
0.5
0.7
+ 5.0
IC, COLLECTOR CURRENT (AMP)
V
,
TEMPERA
TURE COEFFICIENTS (mV/
C)
+ 4.0
+ 3.0
+ 1.0
0
4.0
1.0
2.0
3.0
5.0
VB for VBE
*
VC for VCE(sat)
NPN
2N6282, 2N6283, 2N6284
PNP
2N6285, 2N6286, 2N6287
*APPLIES FOR IC/IB
hFE @ VCE
+
3.0 V
250
55
C to + 25
C
*APPLIES FOR IC/IB
hFE @ VCE
+
3.0 V
250
55
C to + 25
C
25
C to 150
C
25
C to + 150
C
55
C to + 25
C
10
0.2 0.3
1.0
2.0
3.0
5.0 7.0
20
0.5
0.7
10
+ 2.0
+ 2.0
REVERSE
FORWARD
105
Figure 14. Collector CutOff Region
VBE, BASEEMITTER VOLTAGE (VOLTS)
102
101
100
, COLLECT
OR CURRENT
(
A)
I C
101
0.2 0.4
0
+ 0.2
+ 0.4
+ 0.6
VCE = 30 V
TJ = 150
C
100
C
25
C
REVERSE
FORWARD
103
104
0.6 0.8
1.0 1.2 1.4
103
VBE, BASEEMITTER VOLTAGE (VOLTS)
100
101
102
, COLLECT
OR CURRENT
(
A)
I C
103
101
102
+ 0.2 + 0.4
0
0.2
0.4
0.6
+ 0.6 + 0.8
+ 1.0 + 1.2 + 1.4
VCE = 30 V
TJ = 150
C
100
C
25
C
Figure 15. Darlington Schematic
NPN
2N6282
2N6283
2N6284
PNP
2N6285
2N6286
2N6287
BASE
COLLECTOR
EMITTER
[
8.0 k
[
60
BASE
COLLECTOR
EMITTER
[
8.0 k
[
60
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