1
Motorola Thyristor Device Data
Sensitive Gate TRIACS
Silicon Bidirectional Thyristors
Designed for high volume, low cost, industrial and consumer applications
such as motor control; process control; temperature, light and speed control.
Small Size Surface Mount DPAK Package
Passivated Die for Reliability and Uniformity
FourQuadrant Triggering
Blocking Voltage to 600 V
OnState Current Rating of 4.0 Amperes RMS at 93
C
Low Level Triggering and Holding Characteristics
ORDERING INFORMATION
To Obtain "DPAK" in Surface Mount Leadform (Case 369A)
Shipped in Sleeves -- No Suffix, i.e. MAC4DHM
Shipped in 16 mm Tape and Reel -- Add "T4" Suffix to Device Number,
i.e. MAC4DHMT4
To Obtain "DPAK" in Straight Lead Version (Case 369) Shipped in Sleeves --
Add "1" Suffix to Device Number, i.e. MAC4DHM1
MAXIMUM RATINGS
(TJ = 25
C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive OffState Voltage (1)
(TJ = 40 to 110
C, Sine Wave, 50 to 60 Hz, Gate Open)
MAC4DHM
MAC4DLM
VDRM
600
600
Volts
OnState RMS Current
(Full Cycle Sine Wave, 60 Hz, TC = 93
C)
IT(RMS)
4.0
Amps
Peak NonRepetitive Surge Current
(One Full Cycle, 60 Hz, TJ = 110
C)
ITSM
40
Circuit Fusing Consideration (t = 8.3 msec)
I2t
6.6
A2sec
Peak Gate Power
(Pulse Width
10
m
sec, TC = 93
C)
PGM
0.5
Watts
Average Gate Power
(t = 8.3 msec, TC = 93
C)
PG(AV)
0.1
Peak Gate Current (Pulse Width
10
m
sec, TC = 93
C)
IGM
0.2
Amps
Peak Gate Voltage (Pulse Width
10
m
sec, TC = 93
C)
VGM
5.0
Volts
Operating Junction Temperature Range
TJ
40 to 110
C
Storage Temperature Range
Tstg
40 to 150
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance -- Junction to Case
Thermal Resistance
-- Junction to Ambient
Thermal Resistance
-- Junction to Ambient (2)
R
q
JC
R
q
JA
R
q
JA
3.5
88
80
C/W
Maximum Lead Temperature for Soldering Purposes (3)
TL
260
C
(1) VDRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the device are exceeded.
(2) Surface mounted on minimum recommended pad size.
(3) 1/8
from case for 10 seconds.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MAC4DHM/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MAC4DHM
MAC4DLM
TRIACS
4.0 AMPERES RMS
600 VOLTS
CASE 369A13
STYLE 6
MT2
MT1
G
MT2
G
MT2
MT1
Motorola Preferred Devices
Motorola, Inc. 1997
MAC4DHM MAC4DLM
2
Motorola Thyristor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
C unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
Peak Repetitive Blocking Current
(VD = Rated VDRM, Gate Open)
TJ = 25
C
TJ = 110
C
IDRM
--
--
--
--
0.01
2.0
mA
Peak OnState Voltage (1)
(ITM =
6.0 A)
VTM
--
1.3
1.6
Volts
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100
W
)
MT2(+), G(+)
MAC4DLM
MT2(+), G()
MT2(), G()
MT2(), G(+)
MT2(+), G(+)
MAC4DHM
MT2(+), G()
MT2(), G()
MT2(), G(+)
IGT
--
--
--
--
--
--
--
--
1.8
2.1
2.4
4.2
1.8
2.1
2.4
4.2
3.0
3.0
3.0
5.0
5.0
5.0
5.0
10
mA
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100
W
)
MT2(+), G(+)
MT2(+), G()
MT2(), G()
MT2(), G(+)
(VD = 12 V, RL = 10 K
W
, TJ = 110
C)
MT2(+), G(+); MT2(+), G(); MT2(), G(); MT2(), G(+)
VGT
0.5
0.5
0.5
0.5
0.1
0.62
0.57
0.65
0.74
0.4
1.3
1.3
1.3
1.3
--
Volts
Holding Current
(VD = 12 V, Gate Open, IT =
200 mA)
IH
--
1.5
15
mA
Latching Current
MT2(+), G(+)
(VD = 12 V, IG = 5.0 mA)
MT2(+), G()
(VD = 12 V, IG = 5.0 mA)
MT2(), G()
(VD = 12 V, IG = 5.0 mA)
MT2(), G(+)
(VD = 12 V, IG = 10 mA)
IL
--
--
--
--
1.75
5.2
2.1
2.2
10
10
10
10
mA
DYNAMIC CHARACTERISTICS
Characteristics
Symbol
Min
Typ
Max
Unit
Rate of Change of Commutating Current (1)
(VD = 200 V, ITM = 1.8 A, Commutating dv/dt = 1.0 V/
m
sec, TJ = 110
C,
f = 250 Hz, CL = 5.0
m
fd, LL = 80 mH, RS = 56
W
, CS = 0.03
m
fd)
See Figure 10
di/dt(c)
--
3.0
--
A/ms
Critical Rate of Rise of OffState Voltage
(VD = 0.67 X Rated VDRM, Exponential Waveform,
Gate Open, TJ = 110
C)
dv/dt
--
10
--
V/
m
s
(1) Pulse test: Pulse Width
2.0 msec, Duty Cycle
2%.
MAC4DHM MAC4DLM
3
Motorola Thyristor Device Data
Figure 1. RMS Current Derating
Figure 2. OnState Power Dissipation
Figure 3. OnState Characteristics
Figure 4. Transient Thermal Response
Figure 5. Typical Gate Trigger Current versus
Junction Temperature
Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature
2.5
4.0
0
IT(RMS), RMS ONSTATE CURRENT (AMPS)
110
105
100
IT(RMS), RMS ONSTATE CURRENT (AMPS)
3.0
4.0
0
4.0
2.0
1.0
0
4.0
0
VT, INSTANTANEOUS ONSTATE VOLTAGE (VOLTS)
100
10
1.0
0.1
t, TIME (ms)
1.0
0.1
1.0
0.1
0.01
3.5
25
20
40
TJ, JUNCTION TEMPERATURE (
C)
8.0
3.0
2.0
0
TJ, JUNCTION TEMPERATURE (
C)
25
65
40
0.8
0.6
0.2
20
5.0
T C
, MAXIMUM
ALLOW
ABLE CASE
TEMPERA
TURE ( C)
P
I
r (t)
, TRANSIENT
RESIST
ANCE
(NORMALIZED)
95
90
0.5
1.0
1.5
2.0
3.0
3.5
1.0
2.0
3.0
5.0
6.0
1.0
0.5
3.0
10
100
1000
10 K
, GA
TE
TRIGGER
CURRENT
(mA)
I GT
50
110
65
4.0
5.0
110
35
50
0.4
V
GT
, GA
TE
TRIGGER
VOL
T
AGE
(VOL
TS)
,
A
VERAGE POWER DISSIP
A
TION
(W
A
TTS)
(A
V)
, INST
ANT
ANEOUS
ONST
A
TE
CURRENT
(AMPS)
T
80
5.0
dc
180
120
90
60
a
= 30
dc
180
120
90
60
TYPICAL @ TJ = 25
C
MAXIMUM @ TJ = 25
C
MAXIMUM @ TJ = 110
C
Z
q
JC(t) = R
q
JC(t)
S
r(t)
Q3
Q2
Q1
Q3
Q2
Q1
a
= CONDUCTION ANGLE
a
= CONDUCTION ANGLE
a
= 30
1.0
1.0
2.5
3.5
0.5
1.5
2.5
2.0
1.5
10
35
95
6.0
7.0
Q4
10
95
80
Q4
MAC4DHM MAC4DLM
4
Motorola Thyristor Device Data
Figure 7. Typical Holding Current versus
Junction Temperature
Figure 8. Typical Latching Current versus
Junction Temperature
Figure 9. Exponential Static dv/dt versus
GateMT1 Resistance, MT2(+)
65
110
40
TJ, JUNCTION TEMPERATURE (
C)
2.0
TJ, JUNCTION TEMPERATURE (
C)
20
110
40
4.0
2.0
0
1000
10 K
100
RGK, GATEMT1 RESISTANCE (OHMS)
20
15
10
5.0
0
I H
, HOLDING CURRENT
(mA)
I
ST
A
TIC dv/dt (V/ s)
1.0
0
25
5.0
20
50
95
25
5.0
8.0
10
12
, LA
TCHING
CURRENT
(mA)
L
4.0
3.0
5.0
80
50
65
m
MT2 POSITIVE
MT2 NEGATIVE
Q2
Q3
Q1
VD = 400 V
TJ = 110
C
MT2 POSITIVE
6.0
10
35
80
10
35
95
Q4
Figure 10. Critical Rate of Rise of
Commutating Voltage
1.0
0
di/dt(c), RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
10
1.0
0.1
COMMUT
A
TING VOL
T
AGE (V/ s)
m
2.0
3.0
VPK = 400 V
100
C
90
C
TJ = 110
C
tw
VDRM
(di/dt)c =
6f ITM
1000
f =
1
2 tw
dv/dt(c),
CRITICAL
RA
TE OF RISE OF
4.0
5.0
6.0
MT2 NEGATIVE
MAC4DHM MAC4DLM
5
Motorola Thyristor Device Data
Figure 11. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage
80 mHY
LL
1N4007
200 V
+
MEASURE
I
CHARGE
CONTROL
CHARGE
TRIGGER
5
m
F
NON-POLAR
CL
51
2
1
1N914
G
TRIGGER CONTROL
200 VRMS
ADJUST FOR
ITM, 60 Hz VAC
Note: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information.
RS
56
W
0.03
m
F
ADJUST FOR
dv/dt(c)
CS
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