1
Motorola IGBT Device Data
Designer's
TM
Data Sheet
Insulated Gate Bipolar Transistor
with Anti-Parallel Diode
NChannel EnhancementMode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is copackaged
with a soft recovery ultrafast rectifier and uses an advanced
termination scheme to provide an enhanced and reliable high
voltageblocking capability. Its new 600 V IGBT technology is
specifically suited for applications requiring both a high tempera-
ture short circuit capability and a low VCE(on). It also provides fast
switching characteristics and results in efficient operation at high
frequencies. Copackaged IGBTs save space, reduce assembly
time and cost. This new Eseries introduces an energy efficient,
ESD protected, and short circuit rugged device.
Industry Standard TO220 Package
High Speed: Eoff = 70
m
J/A typical at 125
C
High Voltage Short Circuit Capability 10
m
s minimum at 125
C, 400 V
Low OnVoltage 2.0 V typical at 5.0 A, 125
C
Soft Recovery Free Wheeling Diode
is Included in the Package
Robust High Voltage Termination
ESD Protection GateEmitter Zener Diodes
MAXIMUM RATINGS
(TJ = 25
C unless otherwise noted)
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCES
600
Vdc
CollectorGate Voltage (RGE = 1.0 M
)
VCGR
600
Vdc
GateEmitter Voltage -- Continuous
VGE
20
Vdc
Collector Current -- Continuous @ TC = 25
C
-- Continuous @ TC = 90
C
-- Repetitive Pulsed Current (1)
IC25
IC90
ICM
10
7.0
14
Adc
Apk
Total Power Dissipation @ TC = 25
C
Derate above 25
C
PD
81
0.65
Watts
W/
C
Operating and Storage Junction Temperature Range
TJ, Tstg
55 to 150
C
Short Circuit Withstand Time
(VCC = 400 Vdc, VGE = 15 Vdc, TJ = 125
C, RG = 20
)
tsc
10
m
s
Thermal Resistance -- Junction to Case IGBT
-- Junction to Case Diode
-- Junction to Ambient
R
JC
R
JC
R
JA
1.5
2.7
65
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
from case for 5 seconds
TL
260
C
Mounting Torque, 632 or M3 screw
10 lbf
S
in (1.13 N
S
m)
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design.
Designer's
TM
is a trademark of Motorola, Inc.
REV 1
Order this document
by MGP7N60ED/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MGP7N60ED
IGBT & DIODE IN TO220
7.0 A @ 90
C
10 A @ 25
C
600 VOLTS
SHORT CIRCUIT RATED
LOW ONVOLTAGE
CASE 221A09
STYLE 9
TO220AB
C
E
G
G
C
E
Motorola, Inc. 1998
MGP7N60ED
2
Motorola IGBT Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectortoEmitter Breakdown Voltage
(VGE = 0 Vdc, IC = 25
Adc)
Temperature Coefficient (Positive)
V(BR)CES
600
--
--
870
--
--
Vdc
mV/
C
Zero Gate Voltage Collector Current
(VCE = 600 Vdc, VGE = 0 Vdc)
(VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125
C)
ICES
--
--
--
--
10
200
Adc
GateBody Leakage Current (VGE =
20 Vdc, VCE = 0 Vdc)
IGES
--
--
50
m
Adc
ON CHARACTERISTICS (1)
CollectortoEmitter OnState Voltage
(VGE = 15 Vdc, IC = 2.5 Adc)
(VGE = 15 Vdc, IC = 2.5 Adc, TJ = 125
C)
(VGE = 15 Vdc, IC = 5.0 Adc)
VCE(on)
--
--
--
1.6
1.5
2.0
1.9
--
2.4
Vdc
Gate Threshold Voltage
(VCE = VGE, IC = 1.0 mAdc)
Threshold Temperature Coefficient (Negative)
VGE(th)
4.0
--
6.0
10
8.0
--
Vdc
mV/
C
Forward Transconductance (VCE = 10 Vdc, IC = 5.0 Adc)
gfe
--
2.5
--
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vdc V
0 Vdc
Cies
--
610
--
pF
Output Capacitance
(VCE = 25 Vdc, VGE = 0 Vdc,
f = 1.0 MHz)
Coes
--
60
--
Transfer Capacitance
f = 1.0 MHz)
Cres
--
10
--
SWITCHING CHARACTERISTICS (1)
TurnOn Delay Time
(V
360 Vd
I
5 0 Ad
td(on)
--
22
--
ns
Rise Time
(V
360 Vd
I
5 0 Ad
tr
--
24
--
TurnOff Delay Time
(VCC = 360 Vdc, IC = 5.0 Adc,
V
15 Vd
L
300 H
td(off)
--
64
--
Fall Time
VGE = 15 Vdc, L = 300
m
H,
RG = 20
)
tf
--
196
--
TurnOff Switching Loss
RG = 20
)
Energy losses include "tail"
Eoff
--
200
340
m
J
TurnOn Switching Loss
Eon
--
71
--
Total Switching Loss
Ets
--
271
--
TurnOn Delay Time
(V
360 Vd
I
5 0 Ad
td(on)
--
31
--
ns
Rise Time
(V
360 Vd
I
5 0 Ad
tr
--
24
--
TurnOff Delay Time
(VCC = 360 Vdc, IC = 5.0 Adc,
V
15 Vd
L
300 H
td(off)
--
195
--
Fall Time
VGE = 15 Vdc, L = 300
m
H,
RG = 20
,
TJ = 125
C)
tf
--
220
--
TurnOff Switching Loss
RG = 20
,
TJ = 125 C)
Energy losses include "tail"
Eoff
--
350
--
m
J
TurnOn Switching Loss
Eon
--
135
--
Total Switching Loss
Ets
--
485
--
Gate Charge
(V
360 Vdc I
5 0 Adc
QT
--
27.2
--
nC
(VCC = 360 Vdc, IC = 5.0 Adc,
VGE = 15 Vdc)
Q1
--
7.0
--
VGE = 15 Vdc)
Q2
--
13.7
--
(1) Pulse Test: Pulse Width
300
s, Duty Cycle
2%.
MGP7N60ED
3
Motorola IGBT Device Data
DIODE CHARACTERISTICS
Diode Forward Voltage Drop
(IEC = 2.3 Adc)
(IEC = 2.3 Adc, TJ = 125
C)
(IEC = 4.6 Adc)
VFEC
--
--
--
1.7
1.3
2.0
--
--
2.3
Vdc
Reverse Recovery Time
(I
4 6 Ad
trr
--
40
--
ns
(IF = 4.6 Adc,
VR = 360 Vdc
ta
--
17
--
VR = 360 Vdc,
dIF/dt = 200 A/
m
s)
tb
--
23
--
Reverse Recovery Stored Charge
F
m
)
QRR
--
60
--
nC
Reverse Recovery Time
(IF = 4 6 Adc
trr
--
105
--
ns
(IF = 4.6 Adc,
VR = 360 Vdc,
ta
--
36
--
R
,
dIF/dt = 200 A/
m
s,
TJ = 125
C)
tb
--
69
--
Reverse Recovery Stored Charge
TJ = 125
C)
QRR
--
247
--
nC
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
(Measured from the emitter lead 0.25
from package to emitter bond pad)
LE
--
7.5
--
nH
Figure 1. Output Characteristics
Figure 2. Output Characteristics
Figure 3. Transfer Characteristics
Figure 4. CollectorToEmitter Saturation
Voltage versus Junction Temperature
8
0
VCE, COLLECTORTOEMITTER VOLTAGE (VOLTS)
15
20
10
I C
, COLLECT
OR
CURRENT
(AMPS)
5
0
3
1
2
4
5
6
7
8
0
VCE, COLLECTORTOEMITTER VOLTAGE (VOLTS)
15
20
10
I C
, COLLECT
OR
CURRENT
(AMPS)
5
0
3
1
2
4
5
6
7
TJ = 25
C
VGE = 10 V
12.5 V
15 V
17.5 V
20 V
TJ = 125
C
VGE = 10 V
12.5 V
15 V
17.5 V
20 V
10
12
5
VGE, GATETOEMITTER VOLTAGE (VOLTS)
12
8
6
4
2
0
TJ, JUNCTION TEMPERATURE (
C)
25
50
2.2
1.8
1.6
1.4
1.2
1.0
0
11
V
CE(on)
, COLLECT
ORT
OEMITTER ONST
A
T
E
6
7
8
9
25
50
75
100
125
150
I C
, COLLECT
OR
CURRENT
(AMPS)
13
10
2.0
IC = 5.0 A
3.75 A
2.5 A
TJ = 125
C
25
C
VOL
T
AGE (VOL
TS)
VCE = 100 V
5
m
S PULSE WIDTH
VGE = 15 V
80
m
S PULSE WIDTH
MGP7N60ED
4
Motorola IGBT Device Data
Figure 5. Capacitance Variation
Figure 6. GateToEmitter Voltage versus
Total Charge
Figure 7. Total Energy Losses versus
Gate Resistance
Figure 8. Total Energy Losses versus
Junction Temperature
45
5
RG, GATE RESISTANCE (OHMS)
0.50
0.45
0.40
TJ, JUNCTION TEMPERATURE (
C)
150
0.2
0
,
T
O
T
A
L
ENERGY
LOSSES (mJ)
0.20
15
25
0
25
0.4
35
50
75
100
125
TJ = 125
C
VDD = 360 V
VGE = 15 V
IC = 5.0 A
3.75 A
2.5 A
VCC = 360 V
VGE = 15 V
RG = 20
W
IC = 5.0 A
0.25
E
TS
Figure 9. Total Energy Losses versus
Collector Current
Figure 10. TurnOff Losses versus
Gate Resistance
7
8
0
IC, COLLECTOR CURRENT (AMPS)
0.4
0
2
0.6
0.2
TJ = 125
C
VDD = 360 V
VGE = 15 V
RG = 20
W
4
5
,
T
O
T
A
L
ENERGY
LOSSES (mJ)
E
TS
,
T
O
T
A
L
ENERGY
LOSSES (mJ)
E
TS
0.15
0.55
0.60
0.6
0.3
0.1
0.5
0.5
0.1
0.7
0.3
0.8
10
0
VCE, COLLECTORTOEMITTER VOLTAGE (VOLTS)
1200
800
600
400
200
0
Qg, TOTAL GATE CHARGE (nC)
5
30
0
20
16
12
4
0
5
C, CAP
ACIT
ANCE
(pF)
15
25
20
1000
10
15
35
20
25
8
V
, GA
TET
OEMITTER
VOL
T
AGE
(VOL
TS)
GE
TJ = 25
C
IC = 5.0 A
Q1
Q2
QT
VGE = 0 V
TJ = 25
C
Cies
Coes
Cres
50
10
GATE RESISTANCE (OHMS)
0.4
0.5
0.3
0.1
0
25
15
20
30
35
40
45
0.2
VCC = 360 V
VGE = 15 V
TJ = 125
C
IC = 5.0 A
3.75 A
2.5 A
,
TURNOFF
ENERGY
LOSSES (mJ)
E
of
f
0.30
0.35
3.75 A
2.5 A
1
3
6
MGP7N60ED
5
Motorola IGBT Device Data
Figure 11. TurnOff Losses versus
Junction Temperature
Figure 12. TurnOff Losses versus
Collector Current
Figure 13. Forward Characteristics
versus Current
Figure 14. Reverse Biased Safe
Operating Area
VFM, FORWARD VOLTAGE DROP (VOLTS)
0.5
10
1
I F
, INST
ANT
ANEOUS
FOR
W
ARD
1
2
2.5
TJ = 125
C
25
C
1.5
CURRENT
(AMPS)
3
150
0
TJ, JUNCTION TEMPERATURE (
C)
0.3
0.5
0.2
0.1
0
50
25
75
100
125
0.4
VCC = 360 V
VGE = 15 V
RG = 20
W
IC = 5.0 A
3.75 A
2.5 A
,
TURNOFF
ENERGY
LOSSES (mJ)
E
of
f
5
7
0
IC, COLLECTOR CURRENT (AMPS)
0.6
0.4
0.3
0.2
0.1
0
6
1
2
3
4
,
TURNOFF
ENERGY
LOSSES (mJ)
8
0.5
VCC = 360 V
VGE = 15 V
RG = 20
W
TJ = 125
C
E
of
f
VCE, COLLECTORTOEMITTER VOLTAGE (VOLTS)
1
100
10
1
I C
, COLLECT
OR
CURRENT
(AMPS)
10
100
1000
VGE = 15 V
RGE = 20
W
TJ = 125
C
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