1
Motorola Power Products Division Technical Data
Designer's
TM
Data Sheet
Insulated Gate Bipolar Transistor
NChannel EnhancementMode Silicon Gate
This IGBT contains a builtin free wheeling diode and a gate
protection zener. Fast switching characteristics result in efficient
operation at higher frequencies.
BuiltIn Free Wheeling Diode
BuiltIn Gate Protection Zener Diode
Industry Standard Package (TO92 -- 1.0 Watt)
High Speed Eoff: Typical 6.5
m
J @ IC = 0.3 A; TC = 125
C and
dV/dt = 1000 V/
m
s
Robust High Voltage Termination
Robust TurnOff SOA
MAXIMUM RATINGS
(TC = 25
C unless otherwise noted)
Parameters
Symbol
Value
Unit
CollectorEmitter Voltage
VCES
600
Vdc
CollectorGate Voltage (RGE = 1.0 M
)
VCGR
600
Vdc
GateEmitter Voltage -- Continuous
VGES
15
Vdc
Collector Current -- Continuous @ TC = 25
C
-- Continuous @ TC = 90
C
-- Repetitive Pulsed Current (1)
IC25
IC90
ICM
0.5
0.3
2.0
Adc
Total Power Dissipation @ TC = 25
C
PD
1.0
Watt
Operating and Storage Junction Temperature Range
TJ, Tstg
55 to 150
C
THERMAL CHARACTERISTICS
Thermal Resistance -- Junction to Case IGBT
-- Junction to Ambient
R
JC
R
JA
25
125
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
from case for 5 seconds
TL
260
C
UNCLAMPED DRAINTOSOURCE AVALANCHE CHARACTERISTICS
(TC
150
C)
Single Pulse DraintoSource Avalanche
Energy Starting @ TC = 25
C
Energy Starting
@ TC = 125
C
VCE = 100 V, VGE = 15 V, Peak IL = 2.0 A, L = 3.0 mH, RG = 25
W
EAS
125
40
mJ
(1) Pulse width is limited by maximum junction temperature repetitive rating.
Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design.
Designer's is a trademark of Motorola, Inc.
Order this document
by MGS05N60D/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MGS05N60D
POWERLUX
IGBT
0.5 A @ 25
C
600 V
CASE 02905
TO226AE
TO92 (1.0 WATT)
E
C
G
C
E
G
Motorola, Inc. 1997
MGS05N60D
2
Motorola Power Products Division Technical Data
ELECTRICAL CHARACTERISTICS
(TC = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectortoEmitter Breakdown Voltage
(VGE = 0 Vdc, IC = 250
Adc)
Temperature Coefficient (Positive)
BVCES
600
--
680
0.7
--
--
Vdc
V/
C
Zero Gate Voltage Collector Current
(VCE = 600 Vdc, VGE = 0 Vdc, TC = 25
C)
(VCE = 600 Vdc, VGE = 0 Vdc, TC = 125
C)
ICES
ICES
--
--
0.1
5.0
5.0
50
Adc
GateBody Leakage Current (VGE =
15 Vdc, VCE = 0 Vdc)
IGES
--
10
100
m
Adc
ON CHARACTERISTICS
CollectortoEmitter OnState Voltage
(VGE = 15 Vdc, IC = 0.3 Adc, TC = 25
C)
(VGE = 15 Vdc, IC = 0.3 Adc, TC = 125
C)
VCE(on)
--
--
1.6
1.5
2.0
--
Vdc
Gate Threshold Voltage
(VCE = VGE, IC = 250
m
Adc)
Threshold Temperature Coefficient (Negative)
VGE(th)
3.5
--
--
6.0
6.0
--
Vdc
mV/
C
Forward Transconductance (VCE = 10 Vdc, IC = 0.5 Adc)
gfe
0.3
0.42
--
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
20 Vdc V
0 Vdc
Cies
--
75
100
pF
Output Capacitance
(VCE = 20 Vdc, VGE = 0 Vdc,
f = 1.0 MHz)
Coes
--
11
20
Transfer Capacitance
f = 1.0 MHz)
Cres
--
1.6
5.0
DIODE CHARACTERISTICS
Diode Forward Voltage Drop
(IEC = 0.3 Adc, TC = 25
C)
(IEC = 0.3 Adc, TC = 125
C)
(IEC = 0.1 Adc, TC = 25
C)
(IEC = 0.1 Adc, TC = 125
C)
VFEC
--
--
--
--
5.0
5.2
2.3
2.3
6.0
--
3.0
--
Vdc
Reverse Recovery Time @ TC = 25
C
IF = 0.4 Adc, VR = 300 Vdc, dIF/dt = 10 A/
m
s
trr
--
150
--
ns
Reverse Recovery Stored Charge
IF = 0.4 Adc, VR = 300 Vdc, dIF/dt = 10 A/
m
s
QRR
--
35
--
m
C
SWITCHING CHARACTERISTICS (1)
TurnOff Delay Time
(VCC = 300 Vdc, IC = 0.4 Adc,
V
15 Vd
L
3 0
H R
25
td(off)
--
28
--
ns
Fall Time
VGE = 15 Vdc, L = 3.0 mH, RG = 25
,
TC = 25
C, dV/dt = 1000 V/
m
s)
tf
--
150
--
TurnOff Switching Loss
TC = 25 C, dV/dt = 1000 V/
m
s)
Energy losses include "tail"
Eoff
--
3.25
4.25
m
J
TurnOff Delay Time
(VCC = 300 Vdc, IC = 0.4 Adc,
V
15 Vd
L
3 0
H R
25
td(off)
--
21
--
ns
Fall Time
VGE = 15 Vdc, L = 3.0 mH, RG = 25
,
TC = 125
C, dV/dt = 1000 V/
m
s)
tf
--
280
--
TurnOff Switching Loss
TC = 125 C, dV/dt = 1000 V/
m
s)
Energy losses include "tail"
Eoff
--
8.0
10
m
J
Gate Charge
(VCC = 300 Vdc, IC = 0.3 Adc,
VGE = 15 Vdc)
QT
--
6.4
--
nC
(1) Pulse Test: Pulse Width
300
s, Duty Cycle
2%.
MGS05N60D
3
Motorola Power Products Division Technical Data
Figure 1. Saturation Characteristics
Figure 2. Saturation Characteristics
Figure 3. Saturation Characteristics
Figure 4. CollectorToEmitter Saturation
Voltage versus Case Temperature
Figure 5. Diode Forward Voltage
Figure 6. Diode Forward Voltage versus Case
Temperature
1.0
VCE, COLLECTORTOEMITTER VOLTAGE (VOLTS)
2.5
2.0
1.5
1.0
VCE, COLLECTORTOEMITTER VOLTAGE (VOLTS)
6.0
0
1.5
0.5
0
TC, CASE TEMPERATURE (
C)
0
25
2.0
1.8
1.7
1.6
1.5
1.4
25
0.5
1.5
0
IF, COLLECTOR CURRENT (AMPS)
22
12
7.0
2.0
TC, CASE TEMPERATURE (
C)
50
125
10
8.0
6.0
2.0
0
100
1.0
I CE
, COLLECT
OREMITTER
CURRENT
(A)
V
CE
, COLLECT
ORT
OEMITTER VOL
T
AGE (V)
0.5
0
2.0
3.0
1.0
2.0
3.0
4.0
5.0
1.0
2.0
2.5
50
75
100
125
150
, EMITTERT
OCOLLECT
OR VOL
T
AGE (V)
V
FEC
2.0
17
25
75
150
4.0
V
FEC
, COLLECT
ORT
OEMITTER VOL
T
AGE (V)
4.0
I C
, COLLECT
OREMITTER
CURRENT
(A)
1.0
VCE, COLLECTORTOEMITTER VOLTAGE (VOLTS)
2.5
2.0
1.5
1.0
I C
, COLLECT
OREMITTER
CURRENT
(A)
0.5
0
2.0
3.0
4.0
1.9
TC = 25
C
VGE = 15 V
12.5 V
10 V
8.0 V
TC = 150
C
VGE = 15 V
12.5 V
10 V
8.0 V
TC = 20
C
VGE = 15 V
12.5 V
10 V
8.0 V
IC = 700 m
VG = 15 V
IC = 500 mA
IC = 300 mA
TC = 150
C
20
C
25
C
IC = 500 m
IC = 300 mA
IC = 100 mA
MGS05N60D
4
Motorola Power Products Division Technical Data
Figure 7. Capacitance Variation
Figure 8. GateToEmitter Voltage versus
Total Charge
Figure 9. Total Switching Losses versus
CollectorToEmitter Current
Figure 10. Total Switching Losses versus
Case Temperature
Figure 11. Minimum TurnOff
Safe Operating Area
20
25
0
COLLECTORTOEMITTER VOLTAGE (VOLTS)
150
100
50
QG, TOTAL GATE CHARGE (nC)
6.0
0
10
5.0
0
2.0
0
IC, COLLECTORTOEMITTER CURRENT (AMPS)
60
40
30
20
10
0
TC, CASE TEMPERATURE (
C)
50
25
20
15
10
5.0
0
1.5
100
300
0
VCE, COLLECTORTOEMITTER VOLTAGE (VOLTS)
2.5
2.0
1.5
1.0
0.5
0
200
C, CAP
ACIT
ANCE
(pF)
V
,
T
O
T
A
L
SWITCHING
ENERGY
LOSSES ( J)
0
10
5.0
15
7.0
1.0
2.0
3.0
4.0
5.0
15
m
0.5
1.0
75
100
150
, COLLECT
OREMITTER
CURRENT
(A)
I CE
400
600
500
, GA
TET
OEMITTER
VOL
T
AGE
(V)
GE
50
E
of
f
125
,
T
O
T
A
L
SWITCHING
ENERGY
LOSSES ( J)
m
E
of
f
VCE = 300 V
VGE = 15 V
IC = 0.3 A
TC = 25
C
TC = 25
C
Cies
Coes
Cres
L = 3.0 mH
VCC = 300 V
VGE = 15 V
RG = 25
W
dV/dt = 1.0 kV/
m
s
125
C
25
C
L = 3.0 mH
VCC = 300 V
VGE = 15 V
RG = 25
W
dV/dt = 1.0 kV/
m
s
0.7 A
0.3 A
TC = 125
C
VGE = 15 V
RG = 25
W
L = 3.0 mH
MGS05N60D
5
Motorola Power Products Division Technical Data
t, TIME (ms)
r(t), TRANSIENT
THERMAL
RESIST
ANCE (NORMALIZED)
1.0
0.1
0.01
D = 0.5
SINGLE PULSE
1.0E05
1.0E04
1.0E03
1.0E02
1.0E01
1.0E+00
1.0E+01
0.2
0.1
0.05
0.02
0.01
1.0E+02
1.0E+03
0.001
R
JC(t) = r(t) R
JC
R
JC = 25
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) R
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
Figure 12. Typical Thermal Response
(R
q
JC(t))
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