1
Motorola IGBT Device Data
Preliminary Data Sheet
Insulated Gate Bipolar Transistor
NChannel EnhancementMode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is copackaged
with a soft recovery ultrafast rectifier and uses an advanced
termination scheme to provide an enhanced and reliable high
voltageblocking capability. Its new 600V IGBT technology is
specifically suited for applications requiring both a high tempera-
ture short circuit capability and a low VCE(on). It also provides fast
switching characteristics and results in efficient operation at high
frequencies. Copackaged IGBTs save space, reduce assembly
time and cost. This new Eseries introduces an energy efficient,
ESD protected, and rugged short circuit device.
Industry Standard TO247 Package
High Speed: Eoff = 65
m
J/A typical at 125
C
High Voltage Short Circuit Capability 10
m
s minimum at
125
C, 400 V
Low OnVoltage -- 2.1 V typical at 20 A, 125
C
Soft Recovery Free Wheeling Diode is included in the Package
Robust High Voltage Termination
ESD Protection GateEmitter Zener Diodes
MAXIMUM RATINGS
(TJ = 25
C unless otherwise noted)
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCES
600
Vdc
CollectorGate Voltage (RGE = 1.0 M
)
VCGR
600
Vdc
GateEmitter Voltage -- Continuous
VGE
20
Vdc
Collector Current -- Continuous @ TC = 25
C
Collector Current
-- Continuous @ TC = 90
C
Collector Current
-- Repetitive Pulsed Current (1)
IC25
IC90
ICM
31
21
42
Adc
Apk
Total Power Dissipation @ TC = 25
C
Derate above 25
C
PD
142
1.14
Watts
W/
C
Operating and Storage Junction Temperature Range
TJ, Tstg
55 to 150
C
Short Circuit Withstand Time
(VCC = 400 Vdc, VGE = 15 Vdc, TJ = 125
C, RG = 20
)
tsc
10
m
s
Thermal Resistance -- Junction to Case IGBT
Thermal Resistance
-- Junction to Diode
Thermal Resistance
-- Junction to Ambient
R
JC
R
JC
R
JA
0.88
1.4
45
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
from case for 5 seconds
TL
260
C
Mounting Torque, 632 or M3 screw
10 lbf
S
in (1.13 N
S
m)
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Order this document
by MGW21N60ED/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MGW21N60ED
IGBT IN TO247
21 A @ 90
C
31 A @ 25
C
600 VOLTS
SHORT CIRCUIT RATED
ONVOLTAGE
CASE 340K01,
TO247 AE
C
E
G
G
C
E
Motorola, Inc. 1997
MGW21N60ED
2
Motorola IGBT Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectortoEmitter Breakdown Voltage
(VGE = 0 Vdc, IC = 25
Adc)
Temperature Coefficient (Positive)
V(BR)CES
600
--
--
870
--
--
Vdc
mV/
C
EmittertoCollector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc)
BVECS
15
--
--
Vdc
Zero Gate Voltage Collector Current
(VCE = 600 Vdc, VGE = 0 Vdc)
(VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125
C)
ICES
--
--
--
--
10
200
Adc
GateBody Leakage Current (VGE =
20 Vdc, VCE = 0 Vdc)
IGES
--
--
50
Adc
ON CHARACTERISTICS (1)
CollectortoEmitter OnState Voltage
(VGE = 15 Vdc, IC = 10 Adc)
(VGE = 15 Vdc, IC = 10 Adc, TJ = 125
C)
(VGE = 15 Vdc, IC = 20 Adc)
VCE(on)
--
--
--
1.7
1.5
2.2
2.1
--
2.5
Vdc
Gate Threshold Voltage
(VCE = VGE, IC = 1.0 mAdc)
Threshold Temperature Coefficient (Negative)
VGE(th)
4.0
--
6.0
10
8.0
--
Vdc
mV/
C
Forward Transconductance (VCE = 10 Vdc, IC = 20 Adc)
gfe
--
8.6
--
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vdc V
0 Vdc
Cies
--
1605
--
pF
Output Capacitance
(VCE = 25 Vdc, VGE = 0 Vdc,
f = 1.0 MHz)
Coes
--
146
--
Transfer Capacitance
f = 1.0 MHz)
Cres
--
23
--
SWITCHING CHARACTERISTICS (1)
TurnOn Delay Time
(V
360 Vd
I
20 Ad
td(on)
--
29
--
ns
Rise Time
(V
360 Vd
I
20 Ad
tr
--
60
--
TurnOff Delay Time
(VCC = 360 Vdc, IC = 20 Adc,
V
15 Vd
L
300 H
td(off)
--
238
--
Fall Time
VGE = 15 Vdc, L = 300
m
H,
RG = 20
,
TJ = 25
C)
tf
--
140
--
TurnOff Switching Loss
RG = 20
,
TJ = 25 C)
Energy losses include "tail"
Eoff
--
0.8
1.15
mJ
TurnOn Switching Loss
Eon
--
0.6
--
Total Switching Loss
Ets
--
1.4
--
TurnOn Delay Time
(V
360 Vd
I
20 Ad
td(on)
--
28
--
ns
Rise Time
(V
360 Vd
I
20 Ad
tr
--
62
--
TurnOff Delay Time
(VCC = 360 Vdc, IC = 20 Adc,
V
15 Vd
L
300 H
td(off)
--
338
--
Fall Time
VGE = 15 Vdc, L = 300
m
H,
RG = 20
,
TJ = 125
C)
tf
--
220
--
TurnOff Switching Loss
RG = 20
,
TJ = 125 C)
Energy losses include "tail"
Eoff
--
1.3
--
mJ
TurnOn Switching Loss
Eon
--
0.8
--
Total Switching Loss
Ets
--
2.1
--
Gate Charge
(V
360 Vdc I
20 Adc
QT
--
86
--
nC
(VCC = 360 Vdc, IC = 20 Adc,
VGE = 15 Vdc)
Q1
--
18
--
VGE = 15 Vdc)
Q2
--
39
--
DIODE CHARACTERISTICS
Diode Forward Voltage Drop
(IEC = 10 Adc)
(IEC = 10 Adc, TJ = 125
C)
(IEC = 17 Adc)
VFEC
--
--
1.7
1.6
1.3
2.0
1.9
--
2.3
Vdc
(1) Pulse Test: Pulse Width
300
s, Duty Cycle
2%.
(continued)
MGW21N60ED
3
Motorola IGBT Device Data
ELECTRICAL CHARACTERISTICS -- continued
(TJ = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DIODE CHARACTERISTICS -- continued
Reverse Recovery Time
(I
20 Ad
V
360 Vd
trr
--
94
--
ns
(IF = 20 Adc, VR = 360 Vdc,
ta
--
32
--
( F
,
R
,
dIF/dt = 200 A/
s)
tb
--
62
--
Reverse Recovery Stored Charge
QRR
--
0.16
--
C
Reverse Recovery Time
(I
20 Ad
V
360 Vd
trr
--
145
--
ns
(IF = 20 Adc, VR = 360 Vdc,
ta
--
50
--
( F
,
R
,
dIF/dt = 200 A/
s, TJ = 125
C)
tb
--
95
--
Reverse Recovery Stored Charge
QRR
--
0.75
--
C
INTERNAL PACKAGE INDUCTANCE
Internal Emitter Inductance
(Measured from the emitter lead 0.25
from package to emitter bond pad)
LE
--
13
--
nH
Figure 1. Output Characteristics
Figure 2. Output Characteristics
Figure 3. Transfer Characteristics
Figure 4. CollectorToEmitter Saturation
Voltage versus Junction Temperature
6
0
VCE, COLLECTORTOEMITTER VOLTAGE (VOLTS)
60
40
20
VCE, COLLECTORTOEMITTER VOLTAGE (VOLTS)
8
0
20
0
13
17
5
VGE, GATETOEMITTER VOLTAGE (VOLTS)
60
40
20
0
TJ, JUNCTION TEMPERATURE (
C)
25
50
2.3
2.1
1.9
1.7
1.5
0
15
I C
, COLLECT
OR
CURRENT
(AMPS)
I
V
CE
, COLLECT
ORT
OEMITTER VOL
T
AGE (VOL
TS)
0
2
4
2
4
6
40
60
7
9
11
25
50
100
75
125
150
I C
, COLLECT
OR
CURRENT
(AMPS)
, COLLECT
OR
CURRENT
(AMPS)
C
TJ = 25
C
VGE = 10 V
12.5 V
15 V
20 V
17.5 V
TJ = 125
C
VGE = 10 V
12.5 V
15 V
20 V
17.5 V
TJ = 125
C
25
C
VCE = 100 V
5
m
s PULSE WIDTH
VGE = 15 V
80
m
s PULSE WIDTH
IC = 20 A
10 A
15 A
10
30
50
MGW21N60ED
4
Motorola IGBT Device Data
Figure 5. Capacitance Variation
Figure 6. GateToEmitter Voltage versus
Total Charge
5
10
0
VCE, COLLECTORTOEMITTER VOLTAGE (VOLTS)
4000
3200
800
0
QG, TOTAL GATE CHARGE (nC)
25
0
20
16
12
4
0
50
C, CAP
ACIT
ANCE
(pF)
15
25
20
125
75
8
V
GE
, GA
TET
OEMITTER
VOL
T
AGE
(VOL
TS)
Cies
Coes
Cres
TJ = 25
C
VGE = 0 V
QT
Q2
Q1
TJ = 25
C
VCC = 300 V
IC = 20 A
2400
1600
100
Figure 7. Total Energy Losses versus
Gate Resistance
Figure 8. Total Energy Losses versus
Junction Temperature
RG, GATE RESISTANCE (OHMS)
TJ, JUNCTION TEMPERATURE (
C)
50
0.5
0
,
T
O
T
A
L
ENERGY
LOSSES (mJ)
25
0
25
1.0
2.0
1.5
50
75
100
125
TJ = 125
C
VDD = 360 V
VGE = 15 V
IC = 20 A
15 A
10 A
VCC = 360 V
VGE = 15 V
RG = 20
W
IC = 20 A
15 A
10 A
E
TS
,
T
O
T
A
L
ENERGY
LOSSES (mJ)
E
TS
2.5
Figure 9. Total Energy Losses versus
Collector Current
Figure 10. TurnOff Losses versus
Gate Resistance
10
20
0
IC, COLLECTOR CURRENT (AMPS)
0.8
0
5
1.6
TJ = 125
C
VCC = 360 V
VGE = 15 V
RG = 20
W
2.0
0.4
1.2
15
,
T
O
T
A
L
ENERGY
LOSSES (mJ)
E
TS
45
5
RG, GATE RESISTANCE (OHMS)
1.5
1.3
0.9
,
TURNOFF
ENERGY
LOSSES (mJ)
0.5
15
25
35
TJ = 125
C
VDD = 360 V
VGE = 15 V
IC = 20 A
15 A
10 A
1.1
0.7
E
of
f
0.5
0
1.0
2.0
1.5
2.5
5
10
50
30
40
20
3.0
MGW21N60ED
5
Motorola IGBT Device Data
VFM, FORWARD VOLTAGE DROP (VOLTS)
0.5
100
10
1
I F
, INST
ANT
ANEOUS
FOR
W
ARD
1.0
2.0
2.5
TJ = 125
C
Figure 11. TurnOff Losses versus
Junction Temperature
VCE, COLLECTORTOEMITTER VOLTAGE (VOLTS)
1
100
10
1
I C
, COLLECT
OR
CURRENT
(AMPS)
10
100
1000
TJ = 125
C
RGE = 20
W
VGE = 15 V
25
C
1.5
CURRENT
(AMPS)
TJ, JUNCTION TEMPERATURE (
C)
150
50
0.4
0
25
0
25
0.8
1.6
1.2
50
75
100
125
VCC = 360 V
VGE = 15 V
RG = 20
W
IC = 20 A
15 A
10 A
,
TURNOFF
ENERGY
LOSSES (mJ)
E
of
f
10
20
0
IC, COLLECTOR CURRENT (AMPS)
1.2
0.4
0
5
0.8
1.4
TJ = 125
C
VCC = 360 V
VGE = 15 V
RG = 20
W
1.0
0.2
0.6
15
,
TURNOFF
ENERGY
LOSSES (mJ)
E
of
f
Figure 12. TurnOff Losses versus
Collector Current
Figure 13. Forward Characteristics
versus Current
Figure 14. Reverse Biased Safe
Operating Area
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