MHPA18010N
1
RF Device Data
Freescale Semiconductor
CDMA Band
RF Linear LDMOS Amplifier
Designed for Class AB amplifier applications in
50 ohm system
s operating in
the 1800 to 1900 MHz frequency band. A silicon FET design provides
outstanding linearity and gain. In addition, the excellent group delay and phase
linearity characteristics are ideal for digital CDMA and GSM modulation
systems.
Typical CDMA Performance: 1840 MHz, 28 Volts
IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Adjacent Channel Power: -51 dBc @ 30 dBm Average Power,
885 kHz Channel Spacing
Power Gain: 24.5 dB Min (@ f = 1840 MHz)
Features
Excellent Phase Linearity and Group Delay Characteristics
Ideal for Feedforward Base Station Applications
N Suffix Indicates Lead-Free Terminations
Table 1. Maximum Ratings
(T
C
= 25C unless otherwise noted)
Rating
Symbol
Value
Unit
DC Supply Voltage
V
DD
30
Vdc
RF Input Power (Single Carrier CW)
P
in
+20
dBm
Storage Temperature Range
T
stg
- 40 to +100
C
Operating Case Temperature Range
T
C
- 20 to +100
C
Table 2. Electrical Characteristics
(V
DD
= 28 Vdc, V
BIAS
8 V Set for Supply Current of 600 mA, T
C
= 25C, 50 System)
Characteristic
Symbol
Min
Typ
Max
Unit
Supply Current
I
DD
--
600
--
mA
Power Gain
(f = 1840 MHz)
G
p
24.5
25.5
--
dB
Gain Flatness
(f = 1805 - 1880 MHz)
G
F
--
0.2
0.5
dB
Power Output @ 1 dB Comp.
(f = 1840 MHz)
P1dB
--
41.5
--
dBm
Input VSWR
(f = 1805 - 1880 MHz)
VSWR
in
--
1.5:1
2:1
Noise Figure
(f = 1840 MHz)
NF
--
8
10
dB
Adjacent Channel Power Rejection @ 30 dBm Average Power,
1.23 MHz BW, 885 kHz Channel Spacing
ACPR
--
-58
- 51
dBc
Document Number: MHPA18010N
Rev. 4, 5/2006
Freescale Semiconductor
Technical Data
1805-1880 MHz
10 W, 24.5 dB
RF HIGH POWER LDMOS AMPLIFIER
CASE 301AP-02, STYLE 3
MHPA18010N
Freescale Semiconductor, Inc., 2006. All rights reserved.
4
RF Device Data
Freescale Semiconductor
MHPA18010N
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Document Number: MHPA18010N
Rev. 4, 5/2006
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