1
Motorola Bipolar Power Transistor Device Data
Silicon Power Transistors
The MJ21195 and MJ21196 utilize Perforated Emitter technology and are
specifically designed for high power audio output, disk head positioners and linear
applications.
Total Harmonic Distortion Characterized
High DC Current Gain hFE = 25 Min @ IC = 8 Adc
Excellent Gain Linearity
High SOA: 3 A, 80 V, 1 Second
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
250
Vdc
CollectorBase Voltage
VCBO
400
Vdc
EmitterBase Voltage
VEBO
5
Vdc
CollectorEmitter Voltage 1.5 V
VCEX
400
Vdc
Collector Current -- Continuous
Collector Current --
Peak (1)
IC
16
30
Adc
Base Current -- Continuous
IB
5
Adc
Total Power Dissipation @ TC = 25
C
Derate Above 25
C
PD
250
1.43
Watts
W/
C
Operating and Storage Junction Temperature Range
TJ, Tstg
65 to +200
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
0.7
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
C
5
C unless otherwise noted)
Characteristic
Symbol
Min
Typical
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
VCEO(sus)
250
--
--
Vdc
Collector Cutoff Current
(VCE = 200 Vdc, IB = 0)
ICEO
--
--
100
Adc
(1) Pulse Test: Pulse Width = 5
s, Duty Cycle
10%.
(continued)
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ21195/D
Motorola, Inc. 1998
16 AMPERE
COMPLEMENTARY
SILICON POWER
TRANSISTORS
250 VOLTS
250 WATTS
MJ21195
MJ21196
*
*Motorola Preferred Device
PNP
NPN
*
CASE 107
TO204AA
(TO3)
REV 1
MJ21195 MJ21196
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typical
Max
Unit
OFF CHARACTERISTICS
Emitter Cutoff Current
(VCE = 5 Vdc, IC = 0)
IEBO
--
--
100
Adc
Collector Cutoff Current
(VCE = 250 Vdc, VBE(off) = 1.5 Vdc)
ICEX
--
--
100
Adc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 1 s (nonrepetitive)
(VCE = 80 Vdc, t = 1 s (nonrepetitive)
IS/b
5
2.5
--
--
--
--
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 8 Adc, VCE = 5 Vdc)
(IC = 16 Adc, VCE = 5 Vdc)
hFE
25
8
--
--
75
BaseEmitter On Voltage
(IC = 8 Adc, VCE = 5 Vdc)
VBE(on)
--
--
2.2
Vdc
CollectorEmitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)
VCE(sat)
--
--
--
--
1.4
4
Vdc
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
VRMS = 28.3 V, f = 1 kHz, PLOAD = 100 WRMS
hFE
unmatched
(Matched pair hFE = 50 @ 5 A/5 V)
hFE
matched
THD
--
--
0.8
0.08
--
--
%
Current Gain Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
fT
4
--
--
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
Cob
--
--
500
pF
(1) Pulse Test: Pulse Width = 300
s, Duty Cycle
2%
IC, COLLECTOR CURRENT (AMPS)
Figure 1. Typical Current Gain
Bandwidth Product
Figure 2. Typical Current Gain
Bandwidth Product
f
,
CURRENT
BANDWIDTH PRODUCT
(MHz)
T
PNP MJ21195
f
,
CURRENT
BANDWIDTH PRODUCT
(MHz)
T
NPN MJ21196
IC, COLLECTOR CURRENT (AMPS)
0.1
1.0
10
6.5
6.0
5.0
4.0
3.0
2.0
1.0
0
7.5
7.0
6.0
4.0
3.0
5.0
1.0
2.0
0.1
1.0
10
VCE = 10 V
5 V
TJ = 25
C
ftest = 1 MHz
VCE = 5 V
10 V
TJ = 25
C
ftest = 1 MHz
6.5
4.5
3.5
5.5
1.5
2.5
5.5
4.5
3.5
2.5
1.5
0.5
MJ21195 MJ21196
3
Motorola Bipolar Power Transistor Device Data
IB = 2 A
Figure 3. DC Current Gain, VCE = 20 V
Figure 4. DC Current Gain, VCE = 20 V
Figure 5. DC Current Gain, VCE = 5 V
Figure 6. DC Current Gain, VCE = 5 V
h
FE
, DC CURRENT
GAIN
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
h
FE
, DC CURRENT
GAIN
h
FE
, DC CURRENT
GAIN
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
Figure 7. Typical Output Characteristics
I C
, COLLECT
OR
CURRENT
(A)
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
Figure 8. Typical Output Characteristics
I C
, COLLECT
OR
CURRENT
(A)
PNP MJ21195
NPN MJ21196
h
FE
, DC CURRENT
GAIN
TYPICAL CHARACTERISTICS
PNP MJ21195
PNP MJ21195
NPN MJ21196
NPN MJ21196
1000
100
10
100
10
1.0
0.1
TJ = 100
C
25
C
25
C
VCE = 20 V
1000
100
10
100
10
1.0
0.1
TJ = 100
C
25
C
25
C
VCE = 20 V
1000
100
10
100
10
1.0
0.1
1000
100
10
100
10
1.0
0.1
30
25
20
15
10
5.0
0
5.0
0
10
15
20
25
30
25
20
15
10
0
5.0
0
10
15
20
25
5.0
1.5 A
1 A
0.5 A
IB = 2 A
TJ = 25
C
TJ = 100
C
25
C
25
C
VCE = 5 V
TJ = 100
C
25
C
25
C
VCE = 5 V
1.5 A
1 A
0.5 A
TJ = 25
C
MJ21195 MJ21196
4
Motorola Bipolar Power Transistor Device Data
Figure 9. Typical Saturation Voltages
IC, COLLECTOR CURRENT (AMPS)
SA
TURA
TION VOL
T
AGE (VOL
TS)
Figure 10. Typical Saturation Voltages
IC, COLLECTOR CURRENT (AMPS)
SA
TURA
TION VOL
T
AGE (VOL
TS)
Figure 11. Typical BaseEmitter Voltage
IC, COLLECTOR CURRENT (AMPS)
V
BE(on)
, BASEEMITTER VOL
T
AGE (VOL
TS)
Figure 12. Typical BaseEmitter Voltage
IC, COLLECTOR CURRENT (AMPS)
V
BE(on)
, BASEEMITTER VOL
T
AGE (VOL
TS)
Figure 13. Active Region Safe Operating Area
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
I C
, COLLECT
OR
CURRENT
(AMPS)
There are two limitations on the power handling ability of a
transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
The data of Figure 13 is based on TJ(pk) = 200
C; TC is
variable depending on conditions. At high case tempera-
tures, thermal limitations will reduce the power than can be
handled to values less than the limitations imposed by
second breakdown.
PNP MJ21195
NPN MJ21196
TYPICAL CHARACTERISTICS
PNP MJ21195
NPN MJ21196
3.0
2.5
2.0
1.5
1.0
0.5
0
100
10
1.0
0.1
1.6
1.2
1.0
0.8
0.6
0.4
0
100
10
1.0
0.1
0.2
10
1.0
0.1
100
10
1.0
0.1
10
1.0
0.1
100
10
1.0
0.1
100
10
1.0
0.1
100
10
1.0
1000
TJ = 25
C
VCE = 20 V (SOLID)
VCE = 5 V (DASHED)
TJ = 25
C
IC/IB = 10
VBE(sat)
VCE(sat)
1.4
TJ = 25
C
IC/IB = 10
VBE(sat)
VCE(sat)
TJ = 25
C
VCE = 20 V (SOLID)
VCE = 5 V (DASHED)
TJ = 25
C
10 ms
50 ms
250 ms
1 sec
MJ21195 MJ21196
5
Motorola Bipolar Power Transistor Device Data
Figure 14. MJ21195 Typical Capacitance
VR, REVERSE VOLTAGE (VOLTS)
C, CAP
ACIT
ANCE
(pF)
Figure 15. MJ21196 Typical Capacitance
VR, REVERSE VOLTAGE (VOLTS)
C, CAP
ACIT
ANCE
(pF)
AUDIO PRECISION
MODEL ONE PLUS
TOTAL HARMONIC
DISTORTION
ANALYZER
SOURCE
AMPLIFIER
50
0.5
0.5
8.0
50 V
DUT
DUT
+50 V
Figure 16. Typical Total Harmonic Distortion
Figure 17. Total Harmonic Distortion Test Circuit
FREQUENCY (Hz)
T HD
, T
O
T
A
L
HARMONIC
DIST
OR
TION (%)
10000
1000
100
100
10
1.0
0.1
10000
1000
100
100
10
1.0
0.1
1.2
1.1
1.0
0.9
0.8
0.7
0.6
100000
10000
1000
100
10
TJ = 25
C
ftest = 1 MHz
Cib
Cob
TJ = 25
C
ftest = 1 MHz
Cib
Cob
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