1
MOTOROLA
MMBZ5V6ALT1 MMBZ6V2ALT1 MMBZ15VALT1 MMBZ20VALT1
5.6, 6.2 15 & 20 Volt SOT-23
Dual Monolithic Common
Anode Zeners
Transient Voltage Suppressors
for ESD Protection
These dual monolithic silicon zener diodes are designed for applications
requiring transient overvoltage protection capability. They are intended for use
in voltage and ESD sensitive equipment such as computers, printers, business
machines, communication systems, medical equipment and other applications.
Their dual junction common anode design protects two separate lines using
only one package. These devices are ideal for situations where board space is
at a premium.
Specification Features:
SOT23 Package Allows Either Two Separate Unidirectional
Configurations or a Single Bidirectional Configuration
Peak Power -- 24 or 40 Watts @ 1.0 ms (Unidirectional),
per Figure 5 Waveform
Maximum Clamping Voltage @ Peak Pulse Current
Low Leakage < 5.0
A
ESD Rating of Class N (exceeding 16 kV) per the Human Body Model
Mechanical Characteristics:
Void Free, TransferMolded, Thermosetting Plastic Case
Corrosion Resistant Finish, Easily Solderable
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
Available in 8 mm Tape and Reel
Use the Device Number to order the 7 inch/3,000 unit reel. Replace
the "T1" with "T3" in the Device Number to order the 13 inch/10,000 unit reel.
THERMAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Value
Unit
Peak Power Dissipation @ 1.0 ms (1)
MMBZ5V6ALT1, MMBZ6V2ALT1
@ TA
25
C
MMBZ15VALT1, MMBZ20VALT1
Ppk
24
40
Watts
Total Power Dissipation on FR5 Board (2) @ TA = 25
C
Derate above 25
C
PD
225
1.8
mW
mW/
C
Thermal Resistance Junction to Ambient
R
JA
556
C/W
Total Power Dissipation on Alumina Substrate (3) @ TA = 25
C
Derate above 25
C
PD
300
2.4
mW
mW/
C
Thermal Resistance Junction to Ambient
R
JA
417
C/W
Junction and Storage Temperature Range
TJ
Tstg
55 to +150
C
Lead Solder Temperature -- Maximum (10 Second Duration)
TL
260
C
(1) Nonrepetitive current pulse per Figure 5 and derate above TA = 25
C per Figure 6.
(2) FR5 = 1.0 x 0.75 x 0.62 in.
(3) Alumina = 0.4 x 0.3 x 0.024 in., 99.5% alumina
*Other voltages may be available upon request
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBZ5V6ALT1/D
Motorola, Inc. 1996
Rev 1
MMBZ5V6ALT1
MMBZ6V2ALT1
MMBZ15VALT1
MMBZ20VALT1
SOT23 COMMON ANODE DUAL
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSORS
24 & 40 WATTS
PEAK POWER
CASE 31808
STYLE 12
LOW PROFILE SOT23
PLASTIC
PIN 1. CATHODE
2. CATHODE
3. ANODE
1
3
2
Motorola Preferred Devices
*
1
2
3
MOTOROLA
2
MMBZ5V6ALT1 MMBZ6V2ALT1 MMBZ15VALT1 MMBZ20VALT1
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
UNIDIRECTIONAL
(Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(VF = 0.9 V Max @ IF = 10 mA)
Breakdown Voltage
Max Reverse
Leakage Current
Max Zener Impedance (5)
Max
Reverse
Surge
Current
IRSM(4)
(A)
Max Reverse
Voltage @
IRSM(4)
(Clamping
Voltage)
VRSM
(V)
Maximum
Temperature
Coefficient of
VBR
(mV/
C)
VZT(3)
(V)
@ IT
(mA)
IR @ VR
(
A) (V)
ZZT @ IZT
(
) (mA)
ZZK @ IZK
(
) (mA)
Surge
Current
IRSM(4)
(A)
IRSM(4)
(Clamping
Voltage)
VRSM
(V)
Temperature
Coefficient of
VBR
(mV/
C)
Min
Nom
Max
(mA)
(
A) (V)
(
) (mA)
(
) (mA)
IRSM(4)
(A)
VRSM
(V)
(mV/
C)
5.32
5.6
5.88
20
5.0
3.0
11
1600
0.25
3.0
8.0
1.26
5.89
6.2
6.51
1.0
0.5
3.0
--
--
--
2.76
8.7
2.80
(VF = 1.1 V Max @ IF = 200 mA)
Breakdown Voltage
Reverse Voltage
Working Peak
VRWM
(V)
Max Reverse
Leakage Current
IRWM
IR (nA)
Max Reverse
Surge Current
IRSM(4)
(A)
Max Reverse
Voltage @ IRSM(4)
(Clamping Voltage)
VRSM
(V)
Maximum
Temperature
Coefficient of
VBR
(mV/
C)
VBR(3)
(V)
@ IT
(mA)
Reverse Voltage
Working Peak
VRWM
(V)
Max Reverse
Leakage Current
IRWM
IR (nA)
Max Reverse
Surge Current
IRSM(4)
(A)
Voltage @ IRSM(4)
(Clamping Voltage)
VRSM
(V)
Temperature
Coefficient of
VBR
(mV/
C)
Min
Nom
Max
(mA)
(V)
IR (nA)
(A)
VRSM
(V)
VBR
(mV/
C)
14.25
15
15.75
1.0
12.0
50
1.9
21
12.3
19.0
20
21.0
1.0
17.0
50
1.4
28
17.2
(3) VZ/VBR measured at pulse test current IT at an ambient temperature of 25
C.
(4) Surge current waveform per Figure 5 and derate per Figure 6.
(5) ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current supplied. The specfied limits are
(5)
IZ(AC) = 0.1 IZ(DC), with AC frequency = 1 kHz.
TYPICAL CHARACTERISTICS
40
+ 50
18
BREAKDOWN VOL
T
AGE (VOL
TS)
Figure 1. Typical Breakdown Voltage
versus Temperature
(Upper curve for each voltage is bidirectional mode,
lower curve is unidirectional mode)
0
TEMPERATURE (
C)
+ 100
+ 150
15
12
9
6
3
0
(V
Z
, V
BR
@ I
T
)
40
+ 25
1000
Figure 2. Typical Leakage Current
versus Temperature
TEMPERATURE (
C)
+ 85
+ 125
100
10
1
0.1
0.01
I R
(nA)
3
MOTOROLA
MMBZ5V6ALT1 MMBZ6V2ALT1 MMBZ15VALT1 MMBZ20VALT1
0
25
50
75
100
125
150
175
300
250
200
150
100
50
0
Figure 3. Typical Capacitance versus Bias Voltage
(Upper curve for each voltage is unidirectional mode,
lower curve is bidirectional mode)
P
D
, POWER DISSIP
A
TION (mW)
TEMPERATURE (
C)
FR5 BOARD
ALUMINA SUBSTRATE
0
1
2
3
320
280
240
160
120
40
0
Figure 4. Steady State Power Derating Curve
C, CAP
ACIT
ANCE (pF)
BIAS (V)
200
80
15 V
V
ALUE (%)
100
50
0
0
1
2
3
4
t, TIME (ms)
Figure 5. Pulse Waveform
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
50% OF IRSM.
tr
10
s
HALF VALUE --
IRSM
2
tP
tr
PEAK VALUE -- IRSM
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
200
TA, AMBIENT TEMPERATURE (
C)
Figure 6. Pulse Derating Curve
PEAK PULSE DERA
TING IN % OF PEAK POWER
OR CURRENT
@
T
A
= 25
C
Figure 7. Maximum Nonrepetitive Surge
Power, Ppk versus PW
P
0.1
1
10
100
1000
1
10
100
Power is defined as VRSM x IZ(pk) where VRSM is
the clamping voltage at IZ(pk).
PW, PULSE WIDTH (ms)
UNIDIRECTIONAL
RECTANGULAR
WAVEFORM, TA = 25
C
BIDIRECTIONAL
Figure 8. Maximum Nonrepetitive Surge
Power, Ppk(NOM) versus PW
0.1
1
10
100
1000
1
10
100
PW, PULSE WIDTH (ms)
pk
PEAK SURGE POWER (W)
P pk
PEAK SURGE POWER (W)
UNIDIRECTIONAL
RECTANGULAR
WAVEFORM, TA = 25
C
BIDIRECTIONAL
MMBZ5V6ALT1
MMBZ5V6ALT1
Power is defined as VZ(NOM) x IZ(pk) where
VZ(NOM) is the nominal zener voltage measured at
the low test current used for voltage classification.
UNIDIRECTIONAL
5.6 V
MOTOROLA
4
MMBZ5V6ALT1 MMBZ6V2ALT1 MMBZ15VALT1 MMBZ20VALT1
TYPICAL COMMON ANODE APPLICATIONS
A quad junction common anode design in a SOT23 pack-
age protects four separate lines using only one package.
This adds flexibility and creativity to PCB design especially
when board space is at a premium. Two simplified examples
of TVS applications are illustrated below.
MMBZ5V6ALT1
MMBZ6V2ALT1
MMBZ15VALT1
MMBZ20VALT1
KEYBOARD
TERMINAL
PRINTER
ETC.
FUNCTIONAL
DECODER
I/O
A
MMBZ5V6ALT1
MMBZ6V2ALT1
MMBZ15VALT1
MMBZ20VALT1
GND
Computer Interface Protection
B
C
D
Microprocessor Protection
I/O
RAM
ROM
CLOCK
CPU
CONTROL BUS
ADDRESS BUS
DATA BUS
GND
VGG
VDD
MMBZ5V6ALT1
MMBZ6V2ALT1
MMBZ15VALT1
MMBZ20VALT1
5
MOTOROLA
MMBZ5V6ALT1 MMBZ6V2ALT1 MMBZ15VALT1 MMBZ20VALT1
INFORMATION FOR USING THE SOT23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
SOT23
mm
inches
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
SOT23 POWER DISSIPATION
The power dissipation of the SOT23 is a function of the
drain pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power dissipation.
Power dissipation for a surface mount device is determined
by TJ(max), the maximum rated junction temperature of the
die, R
JA, the thermal resistance from the device junction to
ambient, and the operating temperature, TA. Using the
values provided on the data sheet for the SOT23 package,
PD can be calculated as follows:
PD =
TJ(max) TA
R
JA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25
C, one can
calculate the power dissipation of the device which in this
case is 225 milliwatts.
PD =
150
C 25
C
556
C/W
= 225 milliwatts
The 556
C/W for the SOT23 package assumes the use
of the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of 225 milliwatts. There
are other alternatives to achieving higher power dissipation
from the SOT23 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad
TM
. Using a board material such as Thermal
Clad, an aluminum core board, the power dissipation can be
doubled using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
Always preheat the device.
The delta temperature between the preheat and soldering
should be 100
C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10
C.
The soldering temperature and time shall not exceed
260
C for more than 10 seconds.
When shifting from preheating to soldering, the maximum
temperature gradient shall be 5
C or less.
After soldering has been completed, the device should be
allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
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