1
Motorola Bipolar Power Transistor Device Data
Preliminary Data Sheet
Plastic Power Transistors
SO8 for Surface Mount Applications
Collector Emitter Sustaining Voltage -- VCEO(sus)
= 30 Vdc (Min) @ IC = 10 mAdc
High DC Current Gain -- hFE
= 140 (Min) @ IC = 1.2 Adc
= 125 (Min) @ IC = 3.0 Adc
Low Collector Emitter Saturation Voltage -- VCE(sat)
= 0.24 Vdc (Max) @ IC = 1.2 Adc
= 0.60 Vdc (Max) @ IC = 5.0 Adc
Miniature SO8 Surface Mount Package Saves Board Space
MAXIMUM RATINGS (TC = 25
C unless otherwise noted)
Rating
Symbol
Value
Unit
CollectorBase Voltage
VCB
45
Vdc
CollectorEmitter Voltage
VCEO
30
Vdc
EmitterBase Voltage
VEB
8.0
Vdc
Collector Current -- Continuous
Collector Current
--
Peak
IC
3.0
5.0
Adc
Base Current -- Continuous
IB
1.0
Adc
Operating and Storage Junction Temperature Range
TJ, Tstg
55 to + 150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance Junction to Ambient(1)
R
JC
62.5
_
C/W
Total Power Dissipation @ TA = 25
_
C(1)
Derate above 25
_
C
PD
2.0
16
Watts
mW/
_
C
Maximum Temperature for Soldering
TL
260
_
C
(1) Mounted on 2" sq. FR4 board (1" sq. 2 oz. Cu 0.06" thick single sided) with one die operating, 10 seconds max.
This document contains information on a new product. Specifications and information are subject to change without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMDJ3P03BJT/D
Motorola, Inc. 1997
MMDJ3P03BJT
DUAL BIPOLAR
POWER TRANSISTOR
PNP SILICON
30 VOLTS
3 AMPERES
CASE 75105, Style 16
(SO8)
Motorola Preferred Device
Emitter1
1
2
3
4
8
7
6
5
Top View
Pinout
Base1
Emitter2
Base2
Collector1
Collector1
Collector2
Collector2
C
B
E
C
B
E
Schematic
MMDJ3P03BJT
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage
(IC = 10 mAdc, IB = 0 Adc)
VCEO(sus)
30
--
--
Vdc
Collector Cutoff Current
(VCE = 25 Vdc, RBE = 200
W
)
ICER
--
--
20
Adc
Emitter Cutoff Current
(VBE = 5.0 Vdc)
IEBO
--
--
10
Adc
ON CHARACTERISTICS(1)
CollectorEmitter Saturation Voltage
(IC = 0.8 Adc, IB = 20 mAdc)
(IC = 1.2 Adc, IB = 20 mAdc)
(IC = 5.0 Adc, IB = 1.0 Adc)
VCE(sat)
--
--
--
0.14
--
--
0.20
0.24
0.60
Vdc
BaseEmitter Saturation Voltage
(IC = 5.0 Adc, IB = 1.0 Adc)
VBE(sat)
--
--
1.40
Vdc
BaseEmitter On Voltage
(IC = 3.0 Adc, VCE = 4.0 Vdc)
VBE(on)
--
--
1.10
Vdc
DC Current Gain
(IC = 1.2 Adc, VCE = 4.0 Vdc)
(IC = 3.0 Adc, VCE = 4.0 Vdc)
hFE
140
125
--
180
--
--
--
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0 Adc, f = 1.0 MHz)
Cob
--
100
--
pF
Input Capacitance
(VEB = 8.0 Vdc)
Cib
--
135
--
pF
CurrentGain -- Bandwidth Product(2)
(IC = 500 mA, VCE = 10 V, Ftest = 1.0 MHz)
fT
--
105
--
MHz
(1) Pulse Test: Pulse Width
300
s, Duty Cycle
2%.
(2) fT = |hFE|
S
ftest
MMDJ3P03BJT
3
Motorola Bipolar Power Transistor Device Data
Figure 1. DC Current Gain
Figure 2. "ON" Voltages
Figure 3. Collector Saturation Region
Figure 4. Capacitance
VR, REVERSE BIAS (V)
1.0
0.1
1000
100
10
CAP
ACIT
ANCE (pF)
10
100
Cob
1.0
10
0.01
IC, COLLECTOR CURRENT (A)
1000
100
10
IC, COLLECTOR CURRENT (A)
1.0
10
0.01
0.01
100
1.0
IB, BASE CURRENT (mA)
1.00
0.75
0.50
0.25
0
h
FE
, DC CURRENT
GAIN
V
,
VOL
T
AGE
(V)
V
1.0
0.1
0.1
0.1
1.0
10
, COLLECT
OREMITTER VOL
T
AGE (V)
CE(sat)
VCE = 2 V
150
C
25
C
55
C
VBE(sat)
VCE(sat)
IC/IB = 125
IC = 1.2 A
IC = 0.8 A
IC = 0.5 A
Figure 5. Thermal Response
0.00001
IC, COLLECTOR CURRENT (AMPS)
10
0.1
0.001
R
1000
0.0001
0.001
0.01
0.1
1.0
10
100
1.0
0.01
, EFFECTIVE
TRANSIENT
thja(t)
THERMAL
RESIST
ANCE
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
CHIP
JUNCTION
AMBIENT
0.0106
W
0.0431
W
0.1643
W
0.3507
W
0.4302
W
0.0253 F
0.1406 F
0.5064 F
2.9468 F
177.14 F
NORMALIZED TO
q
ja AT 10 s
MMDJ3P03BJT
4
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
CASE 75105
ISSUE P
SEATING
PLANE
1
4
5
8
C
K
4X
P
A
0.25 (0.010)
M
T B
S
S
0.25 (0.010)
M
B
M
8X
D
R
M
J
X 45
_
_
F
A
B
T
DIM
MIN
MAX
MILLIMETERS
A
4.80
5.00
B
3.80
4.00
C
1.35
1.75
D
0.35
0.49
F
0.40
1.25
G
1.27 BSC
J
0.18
0.25
K
0.10
0.25
M
0
7
P
5.80
6.20
R
0.25
0.50
_
_
G
NOTES:
1. DIMENSIONS A AND B ARE DATUMS AND T IS A
DATUM SURFACE.
2. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
3. DIMENSIONS ARE IN MILLIMETER.
4. DIMENSION A AND B DO NOT INCLUDE MOLD
PROTRUSION.
5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
6. DIMENSION D DOES NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS
OF THE D DIMENSION AT MAXIMUM MATERIAL
CONDITION.
STYLE 16:
PIN 1.
EMITTER, DIE #1
2.
BASE, DIE #1
3.
EMITTER, DIE #2
4.
BASE, DIE #2
5.
COLLECTOR, DIE #2
6.
COLLECTOR, DIE #2
7.
COLLECTOR, DIE #1
8.
COLLECTOR, DIE #1
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