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Электронный компонент: MPS6724

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1
Motorola SmallSignal Transistors, FETs and Diodes Device Data
One Watt Darlington Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
MPS6724
MPS6725
Unit
Collector Emitter Voltage
VCES
40
50
Vdc
Collector Base Voltage
VCBO
50
60
Vdc
Emitter Base Voltage
VEBO
12
Vdc
Collector Current -- Continuous
IC
1000
mAdc
Total Device Dissipation @ TA = 25
C
Derate above 25
C
PD
1.0
8.0
Watts
mW/
C
Total Device Dissipation @ TC = 25
C
Derate above 25
C
PD
2.5
20
Watts
mW/
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
q
JA
125
C/W
Thermal Resistance, Junction to Case
R
q
JC
50
C/W
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (1)
(IC = 1.0 mAdc, IB = 0)
MPS6724
MPS6725
V(BR)CES
40
50
--
--
Vdc
Collector Base Breakdown Voltage
(IC = 1.0
m
Adc, IE = 0)
MPS6724
MPS6725
V(BR)CBO
50
60
--
--
Vdc
Emitter Base Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
V(BR)EBO
12
--
Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
MPS6724
(VCB = 40 Vdc, IE = 0)
MPS6725
ICBO
--
--
100
100
nAdc
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
IEBO
--
100
nAdc
1. Pulse Test: Pulse Width
v
300
m
s; Duty Cycle
v
2.0%.
Order this document
by MPS6724/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MPS6724
MPS6725
CASE 2905, STYLE 1
TO92 (TO226AE)
1
2
3
Motorola, Inc. 1996
COLLECTOR 3
BASE
2
EMITTER 1
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MPS6724 MPS6725
2
Motorola SmallSignal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = 200 mAdc, VCE = 5.0 Vdc)
(IC = 1000 mAdc, VCE = 5.0 Vdc)
hFE
25,000
4,000
--
40,000
--
Collector Emitter Saturation Voltage
(IC = 1000 mAdc, IB = 2.0 mAdc)
VCE(sat)
--
1.5
Vdc
Base Emitter On Voltage
(IC = 1000 mAdc, VCE = 5.0 Vdc)
VBE(on)
--
2.0
Vdc
SMALL SIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product
(IC = 200 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
fT
100
1000
MHz
CollectorBase Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Ccb
--
10
pF
1. Pulse Test: Pulse Width
v
300
m
s; Duty Cycle
v
2.0%.
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
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MPS6724 MPS6725
3
Motorola SmallSignal Transistors, FETs and Diodes Device Data
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25
C)
Figure 2. Noise Voltage
f, FREQUENCY (Hz)
50
100
200
500
20
Figure 3. Noise Current
f, FREQUENCY (Hz)
Figure 4. Total Wideband Noise Voltage
RS, SOURCE RESISTANCE (k
)
Figure 5. Wideband Noise Figure
RS, SOURCE RESISTANCE (k
)
5.0
50
70
100
200
30
10
20
1.0
10
10
20
50 100 200
500
1 k 2 k
5 k 10 k 20 k
50 k 100 k
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
BANDWIDTH = 1.0 Hz
RS
0
IC = 1.0 mA
100
A
10
A
BANDWIDTH = 1.0 Hz
IC = 1.0 mA
100
A
10
A
e
n
, NOISE VOL
T
AGE (nV)
i n
, NOISE CURRENT
(pA)
2.0
5.0
10
20
50
100
200
500
100
0
BANDWIDTH = 10 Hz TO 15.7 kHz
IC = 10
A
100
A
1.0 mA
8.0
10
12
14
6.0
0
4.0
1.0
2.0
5.0
10
20
50
100
200
500
100
0
2.0
BANDWIDTH = 10 Hz TO 15.7 kHz
10
A
100
A
IC = 1.0 mA
V
T
,
T
OT
AL
WIDEBAND NOISE VOL
T
AGE (nV)
NF
, NOISE FIGURE (dB)
10
20
50 100 200
500
1 k 2 k
5 k 10 k 20 k
50 k 100 k
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MPS6724 MPS6725
4
Motorola SmallSignal Transistors, FETs and Diodes Device Data
SMALLSIGNAL CHARACTERISTICS
Figure 6. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
5.0
7.0
10
20
3.0
Figure 7. High Frequency Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 9. Collector Saturation Region
IB, BASE CURRENT (
A)
2.0
200 k
5.0
0.04
4.0
2.0
1.0
0.8
0.6
0.4
0.2
TJ = 25
C
C, CAP
ACIT
ANCE (pF)
1.5
2.0
2.5
3.0
1.0
0.5
|h
fe
|, SMALLSIGNAL
CURRENT
GAIN
h
FE
, DC CURRENT
GAIN
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
0.1
0.2
0.4
1.0
2.0
4.0
10
20
40
Cibo
Cobo
0.5
1.0
2.0
0.5
10
20
50
100 200
500
VCE = 5.0 V
f = 100 MHz
TJ = 25
C
100 k
70 k
50 k
30 k
20 k
10 k
7.0 k
5.0 k
3.0 k
2.0 k
7.0
10
20
30
50 70
100
200 300
500
TJ = 125
C
25
C
55
C
VCE = 5.0 V
0.1 0.2
0.5 1.0 2.0
5.0
10
20
50
100 200
500 1000
TJ = 25
C
IC = 10 mA
50 mA
250 mA
500 mA
Figure 10. "On" Voltages
IC, COLLECTOR CURRENT (mA)
Figure 11. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
1.6
5.0
1.0
V
, VOL
T
AGE (VOL
TS)
1.4
1.2
1.0
0.8
0.6
7.0
10
20
30
50 70 100 200 300
500
VBE(sat) @ IC/IB = 1000
R
V
,
TEMPERA
TURE COEFFICIENTS (mV/
C)
TJ = 25
C
VBE(on) @ VCE = 5.0 V
VCE(sat) @ IC/IB = 1000
2.0
3.0
4.0
5.0
6.0
5.0 7.0 10
20
30
50
70 100
200 300
500
25
C TO 125
C
55
C TO 25
C
*R
q
VC FOR VCE(sat)
q
VB FOR VBE
25
C TO 125
C
55
C TO 25
C
*APPLIES FOR IC/IB
hFE/3.0
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MPS6724 MPS6725
5
Motorola SmallSignal Transistors, FETs and Diodes Device Data
Figure 12. Thermal Response
t, TIME (ms)
1.0
r(t),
TRANSIENT

THERMAL
2.0
5.0
1.0
0.5
0.2
0.1
RESIST
ANCE (NORMALIZED)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
20
50
10
200
500
100
1.0 k
2.0 k
5.0 k
10 k
Figure 13. Active Region Safe Operating Area
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
1.0 k
0.4
700
500
300
200
100
70
50
30
20
10
0.6
1.0
2.0
4.0
6.0
10
20
40
I C
, COLLECT
OR CURRENT
(mA)
TA = 25
C
D = 0.5
0.2
0.1
0.05
SINGLE PULSE
SINGLE PULSE
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
Z
JC(t) = r(t)
R
JC
TJ(pk) TC = P(pk) Z
JC(t)
Z
JA(t) = r(t)
R
JA
TJ(pk) TA = P(pk) Z
JA(t)
1.0 ms
100
s
TC = 25
C
1.0 s
Design Note: Use of Transient Thermal Resistance Data
FIGURE A
tP
PP
PP
t1
1/f
DUTY CYCLE
+
t1 f
+
t1
tP
PEAK PULSE POWER = PP
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MPS6724 MPS6725
6
Motorola SmallSignal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
CASE 02905
(TO226AE)
ISSUE AD
R
A
P
L
F
B
K
G
H
C
V
N
N
X X
SEATING
PLANE
1
J
SECTION XX
D
2 3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSIONS D AND J APPLY BETWEEN L AND K
MIMIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.175
0.205
4.44
5.21
B
0.290
0.310
7.37
7.87
C
0.125
0.165
3.18
4.19
D
0.018
0.022
0.46
0.56
F
0.016
0.019
0.41
0.48
G
0.045
0.055
1.15
1.39
H
0.095
0.105
2.42
2.66
J
0.018
0.024
0.46
0.61
K
0.500
12.70
L
0.250
6.35
N
0.080
0.105
2.04
2.66
P
0.100
2.54
R
0.135
3.43
V
0.135
3.43
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola
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MPS6724/D
*MPS6724/D*