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Электронный компонент: MRF1517T1

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1
MRF1517T1
MOTOROLA RF DEVICE DATA
The RF MOSFET Line
RF Power Field Effect Transistor
NChannel EnhancementMode Lateral MOSFETs
The MRF1517T1 is designed for broadband commercial and industrial
applications at frequencies to 520 MHz. The high gain and broadband
performance of this device makes it ideal for largesignal, common source
amplifier applications in 7.5 volt portable FM equipment.
Specified Performance @ 520 MHz, 7.5 Volts
Output Power -- 8 Watts
Power Gain -- 11 dB
Efficiency -- 55%
Characterized with Series Equivalent LargeSignal
Impedance Parameters
Excellent Thermal Stability
Capable of Handling 20:1 VSWR, @ 9.5 Vdc,
520 MHz, 2 dB Overdrive
Broadband UHF/VHF Demonstration Amplifier
Information Available Upon Request
RF Power Plastic Surface Mount Package
Available in Tape and Reel.
T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainSource Voltage (1)
V
DSS
25
Vdc
GateSource Voltage
V
GS
20
Vdc
Drain Current -- Continuous
I
D
4
Adc
Total Device Dissipation @ T
C
= 25
C (2)
Derate above 25
C
P
D
62.5
0.50
Watts
W/
C
Storage Temperature Range
T
stg
65 to +150
C
Operating Junction Temperature
T
J
150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
2
C/W
(1) Not designed for 12.5 volt applications.
(2) Calculated based on the formula P
D
=
NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF1517/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF1517T1
520 MHz, 8 W, 7.5 V
LATERAL NCHANNEL
BROADBAND
RF POWER MOSFET
CASE 46602, STYLE 1
(PLD1.5)
PLASTIC
Motorola, Inc. 2002
G
D
S
TJ TC
R
JC
REV 1
MRF1517T1
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(T
C
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
(V
DS
= 35 Vdc, V
GS
= 0)
I
DSS
--
--
1
Adc
GateSource Leakage Current
(V
GS
= 10 Vdc, V
DS
= 0)
I
GSS
--
--
1
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 7.5 Vdc, I
D
= 120
Adc)
V
GS(th)
1.0
1.7
2.1
Vdc
DrainSource OnVoltage
(V
GS
= 10 Vdc, I
D
= 1 Adc)
V
DS(on)
--
0.5
--
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
g
fs
0.9
--
--
S
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 7.5 Vdc, V
GS
= 0, f = 1 MHz)
C
iss
--
66
--
pF
Output Capacitance
(V
DS
= 7.5 Vdc, V
GS
= 0, f = 1 MHz)
C
oss
--
38
--
pF
Reverse Transfer Capacitance
(V
DS
= 7.5 Vdc, V
GS
= 0, f = 1 MHz)
C
rss
--
6
--
pF
FUNCTIONAL TESTS (In Motorola Test Fixture)
CommonSource Amplifier Power Gain
(V
DD
= 7.5 Vdc, P
out
= 8 Watts, I
DQ
= 150 mA, f = 520 MHz)
G
ps
10
11
--
dB
Drain Efficiency
(V
DD
= 7.5 Vdc, P
out
= 8 Watts, I
DQ
= 150 mA, f = 520 MHz)
50
55
--
%
3
MRF1517T1
MOTOROLA RF DEVICE DATA
Figure 1. 480 520 MHz Broadband Test Circuit
V
DD
C7
R3
C8
C6
R2
RF
INPUT
RF
OUTPUT
Z2
Z3
Z6
C1
C3
C14
DUT
Z7
Z9
Z10
Z4
Z5
L1
Z8
N2
C18
B2
N1
+
C13
C4
C12
B1, B2
Short Ferrite Bead, Fair Rite Products
(2743021446)
C1
300 pF, 100 mil Chip Capacitor
C2, C3, C4, C10,
C12, C13
0 to 20 pF, Trimmer Capacitor
C5, C11
43 pF, 100 mil Chip Capacitor
C6, C18
120 pF, 100 mil Chip Capacitor
C7, C15
10
F, 50 V Electrolytic Capacitor
C8, C16
0.1
F, 100 mil Chip Capacitor
C9, C17
1,000 pF, 100 mil Chip Capacitor
C14
330 pF, 100 mil Chip Capacitor
L1
55.5 nH, 5 Turn, Coilcraft
N1, N2
Type N Flange Mount
R1
15
, 0805 Chip Resistor
R2
1.0 k
, 1/8 W Resistor
R3
33 k
, 1/2 W Resistor
Z1
0.315
x 0.080 Microstrip
Z2
1.415
x 0.080 Microstrip
Z3
0.322
x 0.080 Microstrip
Z4
0.022
x 0.080 Microstrip
Z5, Z6
0.260
x 0.223 Microstrip
Z7
0.050
x 0.080 Microstrip
Z8
0.625
x 0.080 Microstrip
Z9
0.800
x 0.080 Microstrip
Z10
0.589
x 0.080 Microstrip
Board
Glass Teflon
, 31 mils, 2 oz. Copper
Z1
C2
V
GG
C15
+
C9
B1
R1
C16
C17
C5
C11
C10
TYPICAL CHARACTERISTICS, 480 520 MHz
P
out
, OUTPUT POWER (WATTS)
IRL, INPUT
RETURN LOSS (dB)
-5
-15
-25
-10
2
0
10
1
Figure 2. Output Power versus Input Power
P
in
, INPUT POWER (WATTS)
2
Figure 3. Input Return Loss versus
Output Power
P out
, OUTPUT
POWER (W
A
TTS)
0
6
0.8
0.2
4
0.6
1.0
0.4
0
3
10
8
520 MHz
500 MHz
480 MHz
5
4
6
8
7
9
-20
520 MHz
500 MHz
480 MHz
V
DD
= 7.5 Vdc
V
DD
= 7.5 Vdc
MRF1517T1
4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS, 480 520 MHz
P
in
= 27 dBm
V
DD
= 7.5 Vdc
2
P
out
, OUTPUT POWER (WATTS)
50
10
80
1
4
Ef
f, DRAIN EFFICIENCY
(%)
30
60
40
3
5
Ef
f, DRAIN EFFICIENCY
(%)
Figure 4. Gain versus Output Power
P
out
, OUTPUT POWER (WATTS)
8
6
14
Figure 5. Drain Efficiency versus Output Power
2
GAIN (dB)
Figure 6. Output Power versus Biasing Current
12
I
DQ
, BIASING CURRENT (mA)
0
Figure 7. Drain Efficiency versus Biasing Current
80
I
DQ
, BIASING CURRENT (mA)
Figure 8. Output Power versus Supply Voltage
5
V
DD
, SUPPLY VOLTAGE (VOLTS)
0
Figure 9. Drain Efficiency versus Supply Voltage
V
DD
, SUPPLY VOLTAGE (VOLTS)
30
9
8
5
0
40
60
60
30
400
0
4
12
600
1000
80
2
4
6
10
18
200
50
12
P out
, OUTPUT
POWER (W
A
TTS)
200
1000
400
600
P out
, OUTPUT
POWER (W
A
TTS)
6
9
10
7
6
7
8
10
3
1
2
6
Ef
f, DRAIN EFFICIENCY
(%)
50
70
500 MHz
520 MHz
480 MHz
5
6
4
7
9
10
8
16
6
8
7
9
10
11
70
20
500 MHz
520 MHz
480 MHz
800
8
500 MHz
520 MHz
480 MHz
800
70
500 MHz
520 MHz
480 MHz
10
8
500 MHz
520 MHz
480 MHz
500 MHz
520 MHz
480 MHz
10
40
V
DD
= 7.5 Vdc
V
DD
= 7.5 Vdc
P
in
= 27 dBm
V
DD
= 7.5 Vdc
P
in
= 27 dBm
I
DQ
= 150 mA
P
in
= 27 dBm
I
DQ
= 150 mA
5
MRF1517T1
MOTOROLA RF DEVICE DATA
Figure 10. 400 440 MHz Broadband Test Circuit
V
DD
C6
R3
C7
C5
R2
RF
INPUT
RF
OUTPUT
Z2
Z3
Z5
C1
C3
C13
DUT
Z6
Z8
Z9
Z4
L1
Z7
N2
C17
B2
N1
+
C12
C4
C11
B1, B2
Short Ferrite Bead, Fair Rite Products
(2743021446)
C1, C13
300 pF, 100 mil Chip Capacitor
C2, C3, C4, C10,
C11, C12
0 to 20 pF, Trimmer Capacitor
C5, C17
130 pF, 100 mil Chip Capacitor
C6, C14
10
F, 50 V Electrolytic Capacitor
C7, C15
0.1
F, 100 mil Chip Capacitor
C8, C16
1,000 pF, 100 mil Chip Capacitor
C9
33 pF, 100 mil Chip Capacitor
L1
55.5 nH, 5 Turn, Coilcraft
N1, N2
Type N Flange Mount
R1
12
, 0805 Chip Resistor
R2
1.0 k
, 1/8 W Resistor
R3
33 k
, 1/2 W Resistor
Z1
0.617
x 0.080 Microstrip
Z2
0.723
x 0.080 Microstrip
Z3
0.513
x 0.080 Microstrip
Z4, Z5
0.260
x 0.223 Microstrip
Z6
0.048
x 0.080 Microstrip
Z7
0.577
x 0.080 Microstrip
Z8
1.135
x 0.080 Microstrip
Z9
0.076
x 0.080 Microstrip
Board
Glass Teflon
, 31 mils, 2 oz. Copper
Z1
C2
V
GG
C14
+
C8
B1
R1
C15
C16
C9
C10
TYPICAL CHARACTERISTICS, 400 440 MHz
P
out
, OUTPUT POWER (WATTS)
IRL, INPUT
RETURN LOSS (dB)
-5
-15
-25
-10
2
1
0
4
5
Figure 11. Output Power versus Input Power
P
in
, INPUT POWER (WATTS)
2
Figure 12. Input Return Loss versus Output Power
P out
, OUTPUT
POWER (W
A
TTS)
0
6
0.4
0.1
4
440 MHz
0.3
0.5
0.2
0
10
400 MHz
3
9
7
6
8
9
7
10
-20
400 MHz
420 MHz
440 MHz
1
3
5
8
420 MHz
V
DD
= 7.5 Vdc
V
DD
= 7.5 Vdc