1
MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3
MOTOROLA RF DEVICE DATA
The RF MOSFET Line
RF Power Field Effect Transistors
NChannel EnhancementMode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCNPCS/cellular radio and WLL
applications. Specified for GSM1805 1880 MHz.
Typical GSM Performance, Full Frequency Band (1805 1880 MHz)
Power Gain -- 13 dB (Typ) @ 60 Watts
Efficiency -- 45% (Typ) @ 60 Watts
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 26 Vdc, 60 Watts CW Output Power
Excellent Thermal Stability
Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm,
13 Inch Reel.
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40
Nominal.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DrainSource Voltage
V
DSS
65
Vdc
GateSource Voltage
V
GS
0.5, +15
Vdc
Total Device Dissipation @ T
C
25C
Derate above 25
C
P
D
180
1.03
Watts
W/
C
Storage Temperature Range
T
stg
65 to +150
C
Operating Junction Temperature
T
J
200
C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
0.97
C/W
NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF18060A/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF18060A
MRF18060AR3
MRF18060ALSR3
MRF18060ASR3
1.80 1.88 GHz, 60 W, 26 V
LATERAL NCHANNEL
RF POWER MOSFETs
CASE 46506, STYLE 1
NI780
MRF18060A
CASE 465A06, STYLE 1
NI780S
MRF18060ALSR3, MRF18060ASR3
Motorola, Inc. 2002
REV 5
MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(T
C
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 10
Adc)
V
(BR)DSS
65
--
--
Vdc
Zero Gate Voltage Drain Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
6
Adc
GateSource Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
--
--
1
Adc
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 300
Adc)
V
GS(th)
2
--
4
Vdc
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 500 mAdc)
V
GS(Q)
2.5
3.9
4.5
Vdc
DrainSource OnVoltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
V
DS(on)
--
0.27
--
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 2 Adc)
g
fs
--
4.7
--
S
DYNAMIC CHARACTERISTICS
Input Capacitance (Including Input Matching Capacitor in Package) (1)
(V
DS
= 26 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
iss
--
160
--
pF
Output Capacitance (1)
(V
DS
= 26 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
oss
--
740
--
pF
Reverse Transfer Capacitance
(V
DS
= 26 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
--
2.7
--
pF
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system)
CommonSource Amplifier Power Gain @ 60 W (2)
(V
DD
= 26 Vdc, I
DQ
= 500 mA, f = 1805 1880 MHz)
G
ps
11.5
13
--
dB
Drain Efficiency @ 60 W (2)
(V
DD
= 26 Vdc, I
DQ
= 500 mA, f = 1805 1880 MHz)
43
45
--
%
Input Return Loss (2)
(V
DD
= 26 Vdc, P
out
= 60 W CW, I
DQ
= 500 mA,
f = 1805 1880 MHz)
IRL
--
--
10
dB
Output Mismatch Stress
(V
DD
= 26 Vdc, P
out
= 60 W CW, I
DQ
= 500 mA VSWR = 10:1,
All Phase Angles at Frequency of Tests)
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
(2) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1800 band, ensuring batchtobatch
consistency.
3
MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3
MOTOROLA RF DEVICE DATA
RF
INPUT
RF
OUTPUT
Z1
V
GG
C6
C7
C1
Z3
DUT
V
DD
Z4
Z5
C1
100 nF Chip Capacitor (1203)
C2, C4, C7
10 pF Chip Capacitors
C3
10
mF, 35 V Electrolytic Tantalum Capacitor
C5
1.2 pF Chip Capacitor
C6
1.0 pF Chip Capacitor
R1, R3
2.2 k
Chip Resistors (0805)
R2, R4
2.7 k
Chip Resistors (0805)
R5
1.1 k
Chip Resistor (0805)
T1
BC847 Transistor SOT23
Z1
0.47
x 0.09 Microstrip
Z2
1.16
x 0.09 Microstrip
Z3
0.57
x 0.95 Microstrip
Z4
0.59
x 1.18 Microstrip
Z5
1.26
x 0.15 Microstrip
Z6
1.15
x 0.09 Microstrip
Z7
0.37
x 0.09 Microstrip
C5
Z7
R4
C2
R5
C3
C4
+
Z2
R3
R1
R2
T1
Z6
VBIAS
Ground
Ground
VSUPPLY
C7
C4
C3
R5
C2
C1
R4
R3
R2
R1
C5
C6
T1
Figure 1. 1805 1880 MHz Test Fixture Schematic
Figure 2. 1805 1880 MHz Test Fixture Component Layout
MRF18060
MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3
4
MOTOROLA RF DEVICE DATA
T2
R4
C4
V
supply
C3
C1
R1
R2
R5
T1
R6
R3
R4
Z5
T1
T2
C5
C2
V
bias
Z4
RF
INPUT
RF
OUTPUT
Z1
C7
C8
Z3
Z6
C6
Z7
+
Z2
Figure 3. 1800 2000 MHz Demo Board Schematic
V
supply
Ground
C6
C4
C7
C8
C5
R6
C2
C1
R1
T1
R2
R3
R5
V
bias
Figure 4. 1800 2000 MHz Demo Board Component Layout
C3
MRF18060
C1
1
mF Chip Capacitor (0805)
C2
100 nF Chip Capacitor (0805)
C3, C5, C8
10 pF Chip Capacitors, ACCUP (0805)
C4
10
mF, 35 V Tantalum Electrolytic Capacitor
C6
1.8 pF Chip Capacitor, ACCUP (0805)
C7
1 pF Chip Capacitor, ACCUP (0805)
R1
10
Chip Resistor (0805)
R2, R6
1 k
Chip Resistors (0805)
R3
1.2 k
Chip Resistor (0805)
R4
2.2 k
Chip Resistor (0805)
R5
5 k
, SMD Potentiometer
T1
LP2951 Micro8 Voltage Regulator
T2
BC847 SOT23 NPN Transistor
Z1
0.159
x 0.055 Microstrip
Z2
0.982
x 0.055 Microstrip
Z3
0.087
x 0.055 Microstrip
Z4
0.512
x 0.787 Microstrip
Z5
0.433
x 1.220 Microstrip
Z6
1.039
x 0.118 Microstrip
Z7
0.268
x 0.055 Microstrip
Substrate = 0.5 mm Teflon
Glass,
r
= 2.55
MRF18060
5
MRF18060A MRF18060AR3 MRF18060ALSR3 MRF18060ASR3
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS (DATA TAKEN USING WIDEBAND DEMONSTRATION BOARD)
IRL
P
in
= 6 W
Figure 5. Power Gain versus
Output Power
P
out
, OUTPUT POWER (WATTS)
8
10
Figure 6. Output Power versus Supply Voltage
0
V
DD
, SUPPLY VOLTAGE (VOLTS)
100
10
40
G
ps
, POWER GAIN (dB)
18
1
P
Figure 7. Output Power versus Frequency
90
f, FREQUENCY (MHz)
0
Figure 8. Output Power and Efficiency
versus Input Power
P
in
, INPUT POWER (WATTS)
20
1800
10
0
15
1
90
20
30
30
20
1900
60
100
30
22
50
40
10
30
0
2
50
70
1820
Figure 9. Wideband Gain and IRL
(at Small Signal)
15.0
f, FREQUENCY (MHz)
10.0
1700
10.5
12.0
12.5
2100
14.5
14.0
1900
1800
2000
10
9
13
16
14
500 mA
300 mA
100 mA
I
DQ
= 750 mA
26
1840
3
4
5
6
60
50
40
20
15
h
V
DD
= 26 Vdc
f = 1880 MHz
11
12
28
20
24
80
90
, OUTPUT
POWER (W
A
TTS)
out
2.5 W
P
in
= 5 W
V
DD
= 26 Vdc
I
DQ
= 500 mA
1 W
P
, OUTPUT
POWER (W
A
TTS)
out
1860
1880
60
80
70
V
DD
= 26 Vdc
I
DQ
= 500 mA
1 W
0.5 W
3 W
50
40
60
70
80
P
, OUTPUT
POWER (W
A
TTS)
out
25
30
P
out
V
DD
= 26 Vdc
I
DQ
= 500 mA
f = 1880 MHz
13.5
13.0
G
ps
, POWER GAIN (dB)
0
-10
-12
-18
-20
-16
-14
-2
-4
-6
-8
V
DD
= 26 Vdc
I
DQ
= 500 mA
G
ps
35
45
55
11.0
11.5
IRL, INPUT
RETURN LOSS (dB)
, DRAIN EFFICIENCY
(%)
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