MRF18090A MRF18090AS

MOTOROLA RF DEVICE DATA

The RF MOSFET Line

RF Power Field Effect Transistors

NChannel EnhancementMode Lateral MOSFETs

Designed for GSM and EDGE base station applications with frequencies from

1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in class AB for GSM and EDGE cellular radio
applications.

GSM and EDGE Performances, Full Frequency Band

Power Gain -- 13.5 dB (Typ) @ 90 Watts (CW)
Efficiency -- 52% (Typ) @ 90 Watts (CW)

Internally Matched, Controlled Q, for Ease of Use

High Gain, High Efficiency and High Linearity

Integrated ESD Protection

Designed for Maximum Gain and Insertion Phase Flatness

Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts (CW) Output Power

Excellent Thermal Stability

Characterized with Series Equivalent LargeSignal Impedance Parameters

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

DrainSource Voltage

DSS

Vdc

GateSource Voltage

+15

0.5

Vdc

Total Device Dissipation @ T

= 25

Derate above 25

250

1.43

Watts

Storage Temperature Range

stg

65 to +200

Operating Junction Temperature

200

ESD PROTECTION CHARACTERISTICS

Test Conditions

Class

Human Body Model

2 (Minimum)

Machine Model

M3 (Minimum)

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

0.7

C/W

NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.

Order this document

by MRF18090A/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MRF18090A

MRF18090AS

1.80 1.88 GHz, 90 W, 26 V

LATERAL NCHANNEL

RF POWER MOSFETS

CASE 465B03, STYLE 1

(NI880)

(MRF18090A)

CASE 465C02, STYLE 1

(NI880S)

(MRF18090AS)

Motorola, Inc. 2002

REV 3

MRF18090A MRF18090AS
2

MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS

= 25

C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

DrainSource Breakdown Voltage

= 0 Vdc, I

= 100

Adc)

(BR)DSS

Vdc

Zero Gate Voltage Drain Current

= 26 Vdc, V

= 0 Vdc)

DSS

Adc

GateSource Leakage Current

= 5 Vdc, V

= 0 Vdc)

GSS

Adc

ON CHARACTERISTICS

Gate Quiescent Voltage

= 26 Vdc, I

= 750 mAdc)

GS(Q)

2.5

3.7

4.5

Vdc

DrainSource OnVoltage

= 10 Vdc, I

= 1 Adc)

DS(on)

0.1

Vdc

Forward Transconductance

= 10 Vdc, I

= 3 Adc)

7.2

DYNAMIC CHARACTERISTICS

Reverse Transfer Capacitance

= 26 Vdc

30 mV(rms)ac @ 1 MHz, V

= 0 Vdc)

rss

4.2

FUNCTIONAL TESTS (In Motorola Test Fixture)

CommonSource Amplifier Power Gain @ 90 W (1)

= 26 Vdc, I

= 750 mA, f = 1805 1880 MHz)

12.0

13.5

Drain Efficiency @ 90 W (1)

= 26 Vdc, I

= 750 mA, f = 1805 1880 MHz)

Input Return Loss (1)

= 26 Vdc, P

out

= 90 W CW, I

= 750 mA,

f = 1805 1880 MHz)

IRL

Output Mismatch Stress

= 26 Vdc, P

out

= 90 W CW, I

= 750 mA VSWR = 10:1,

All Phase Angles at Frequency of Tests)

No Degradation In Output Power

Before and After Test

(1) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1800 band, ensuring batchtobatch
consistency.

MRF18090A MRF18090AS

MOTOROLA RF DEVICE DATA

INPUT

OUTPUT

DUT

C1, C3

1.0

F Chip Capacitors (0805)

1.0 nF Chip Capacitor (0805)

C4, C5

6.8 pF, 100B Chip Capacitors, ATC

220

F, 50 V Electrolytic Capacitor

C7, C8

12 pF, 100B Chip Capacitors, ATC

2.2 k

Chip Resistor (0805)

R2, R3, R6

1.0 k

Chip Resistors (0805)

10 k

Chip Resistor (0805)

6.8 k

Chip Resistor (0805)

BC847 SOT23

0.697

x 0.087

Microstrip

0.197

x 0.087

Microstrip

0.819

x 0.087

Microstrip

0.181

x 0.144

Microstrip

0.383

x 1.148

Microstrip

0.400

x 1.380

Microstrip

0.351

x 0.351

Microstrip

0.126

x 0.087

Microstrip

1.280

x 0.087

Microstrip

Z10

1.275

x 0.055

Microstrip

PCB

Teflon

Glass

Z10

Figure 1. 1.80 1.88 GHz Test Fixture Schematic

Figure 2. 1.80 1.88 GHz Test Fixture Component Layout

Ground

T1 R4

Ground

WB1

WB2

MRF18090A

VBIAS

VSUPPLY

MRF18090A MRF18090AS
4

MOTOROLA RF DEVICE DATA

SUPPLY

ÎÎÎ

INPUT

OUTPUT

Figure 3. 1.80 1.88 GHz Demo Board Schematic

Figure 4. 1.80 1.88 GHz Demo Board Component Layout

C1, C3

F Chip Capacitors (0805)

0.1

F Chip Capacitor (0805)

1 nF Chip Capacitor (0805)

220

F, 50 V Electrolytic Capacitor

C6, C7

8.2 pF, 100A Chip Capacitors

C8, C9, C10

22 pF, 100A Chip Capacitors

Chip Resistor (0805)

R2, R3

1 k

Chip Resistors (0805)

2.2 k

Chip Resistor (0805)

10 k

Chip Resistor (0603)

5 k

, SMD Potentiometer

LP2951 Micro8 Voltage Regulator

BC847 SOT23 NPN Transistor

0.210

x 0.055

Microstrip

0.419

x 0.787

Microstrip

0.836

x 0.512

Microstrip

0.164

x 0.055

Microstrip

Substrate = 0.5 mm Teflon

Glass

C10

Ground

C10

MRF18090A

SUPPLY

ÎÎ

MRF18090A

MRF18090A MRF18090AS

MOTOROLA RF DEVICE DATA

TYPICAL CHARACTERISTICS

1 W

= 3.65 W

Figure 5. Power Gain versus

Output Power

out

, OUTPUT POWER (WATTS)

Figure 6. Output Power versus Supply Voltage

, SUPPLY VOLTAGE (VOLTS)

120

, POWER GAIN (dB)

0.1

Figure 7. Output Power versus Frequency

100

f, FREQUENCY (GHz)

Figure 8. Output Power and Efficiency

versus Input Power

, INPUT POWER (WATTS)

1.795

120

1.895

100

50
40

1.815

Figure 9. Wideband Gain and IRL

(at Small Signal)

f, FREQUENCY (MHz)

1.75

1.95

1.85

1.80

1.90

500 mA

300 mA

750 mA

= 1000 mA

1.835

= 26 Vdc

f = 1880 MHz

, OUTPUT

POWER (W

A
TTS)

out

2 W

= 3.65 W

= 750 mA

f = 1880 MHz

1 W

, OUTPUT

POWER (W

A
TTS)

out

1.855

1.875

80
70

= 26 Vdc

= 750 mA

2 W

100

, OUTPUT

POWER (W

A
TTS)

out

= 26 Vdc

= 750 mA

f = 1880 MHz

, POWER GAIN (dB)

-15

-25

-30

-20

-5

-10

= 26 Vdc

= 750 mA

IRL, INPUT

RETURN LOSS (dB)

1.0

100

IRL

, DRAIN EFFICIENCY

(%)

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ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: MRF18090A