1
MRF314
MOTOROLA RF DEVICE DATA
The RF Line
NPN Silicon
RF Power Transistors
. . . designed primarily for wideband largesignal driver and output amplifier
stages in the 30 200 MHz frequency range.
Guaranteed Performance at 150 MHz, 28 Vdc
Output Power = 30 Watts
Minimum Gain = 10 dB
100% Tested for Load Mismatch at All Phase Angles with 30:1 VSWR
Gold Metallization System for High Reliability Applications
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
35
Vdc
CollectorBase Voltage
VCBO
65
Vdc
EmitterBase Voltage
VEBO
4.0
Vdc
Collector Current -- Continuous
IC
3.4
Adc
Total Device Dissipation @ TC = 25
C (1)
Derate above 25
C
PD
82
0.47
Watts
W/
C
Storage Temperature Range
Tstg
65 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
2.13
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(IC = 30 mAdc, IB = 0)
V(BR)CEO
35
--
--
Vdc
CollectorEmitter Breakdown Voltage
(IC = 30 mAdc, VBE = 0)
V(BR)CES
65
--
--
Vdc
CollectorBase Breakdown Voltage
(IC = 30 mAdc, IE = 0)
V(BR)CBO
65
--
--
Vdc
EmitterBase Breakdown Voltage
(IE = 3.0 mAdc, IC = 0)
V(BR)EBO
4.0
--
--
Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO
--
--
3.0
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 1.5 Adc, VCE = 5.0 Vdc)
hFE
20
--
80
--
NOTE:
(continued)
1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF
amplifiers.
Order this document
by MRF314/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF314
30 W, 30 200 MHz
RF POWER
TRANSISTORS
NPN SILICON
CASE 21107, STYLE 1
Motorola, Inc. 1994
MRF314
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS -- continued
(TC = 25
C unless otherwise noted.)
Characteristic
Unit
Max
Typ
Min
Symbol
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 30 Vdc, IE = 0, f = 1.0 MHz)
Cob
--
30
40
pF
FUNCTIONAL TESTS (Figure 1)
CommonEmitter Amplifier Power Gain
(VCC = 28 Vdc, Pout = 30 W, f = 150 MHz)
GPE
10
13.5
--
dB
Collector Efficiency
(VCC = 28 Vdc, Pout = 30 W, f = 150 MHz)
50
--
--
%
Load Mismatch
(VCC = 28 Vdc, Pout = 30 W, f = 150 MHz,
VSWR = 30:1 all phase angles)
No Degradation in Power Output
Figure 1. 150 MHz Test Circuit
R2
R1
RFC3
L1
C10
C9
C8
RFC2
C2
C3
RFC1
C4
C5
C6
RF OUTPUT
Z2
C1
Z1
DC + 28 Vdc
C7
DUT
RF INPUT
C1, C7 -- 18 pF, 100 mil ATC
C2 -- 68 pF, 100 mil ATC
C3, C6 -- Johanson #JMC 5501
C4 -- 270 pF, 100 mil ATC
C5 -- 240 pF, 100 mil ATC
C8, C9 -- 100 pF Underwood
C10 -- 1.0
F Tantalum
L1 -- 2 Turns, 2.5
#20 Wire, ID = 0.275
R1, R2 -- 10
, 1.0 W
RFC1 -- 15
H Molded Coil
RFC2 -- 2 Turns, 2.5
#20 Wire, ID = 0.2
RFC3 -- Ferroxcube VK20019/4B
Z1 -- Microstrip, 0.168
W x 1.6
L
Z2 -- Microstrip, 0.168
W x 1.2
L
Board -- Glass Teflon
r = 2.55
3
MRF314
MOTOROLA RF DEVICE DATA
, EFFICIENCY
(%)
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Input Power
Figure 4. Power Gain versus Frequency
Figure 5. Efficiency versus Frequency
TYPICAL PERFORMANCE CURVES
55
45
35
25
15
5
24
22
20
18
16
14
12
50
60
70
10
20
40
60
80
100
120
140
160
180
200
220
20
40
60
80
100
120
140
160
180
200
220
VCC = 28 V
Pout = 30 W
VCC = 28 V
Pout = 30 W
VCC = 13.5 V
VCC = 28 V
f, FREQUENCY (MHz)
G
PE
, COMMON EMITTER POWER GAIN (dB)
0.03
Pin, INPUT POWER (WATTS)
P
out
, OUTPUT
POWER (W
A
TTS)
0.1
1
10
30
25
20
15
10
5
0.04
Pin, INPUT POWER (WATTS)
0.1
1
6
200 MHz
150 MHz
100 MHz
50 MHz
70 MHz
f = 30 MHz
200 MHz
150 MHz
100 MHz
50 MHz
70 MHz
P
out
, OUTPUT
POWER (W
A
TTS)
f, FREQUENCY (MHz)
f = 30 MHz
MRF314
4
MOTOROLA RF DEVICE DATA
Figure 6. Series Equivalent Input/Output Impedance
ZOL*
Zin
f = 200 MHz
150
0
20.0
150
5.0
10.0
15.0
20.0
15.0
10.0
5.0
5.0
f = 200 MHz
100
70
30
50
100
70
50
30
Pout = 30 W, VCC = 28 V
f
MHz
Zin
OHMS
ZOL*
OHMS
30
50
70
100
150
200
2.4 j3.4
1.6 j2.6
0.8 j0.8
0.7 j0.5
0.9 + j0.9
1.3 + j1.2
18.0 j12.1
16.5 j12.1
15.0 j11.8
12.9 j10.8
11.9 j9.4
11.5 j8.1
ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage
and frequency.
5
MRF314
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 21107
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A
U
M
M
Q
R
B
1
4
3
2
D
K
E
SEATING
PLANE
C
J
H
S
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.960
0.990
24.39
25.14
B
0.370
0.390
9.40
9.90
C
0.229
0.281
5.82
7.13
D
0.215
0.235
5.47
5.96
E
0.085
0.105
2.16
2.66
H
0.150
0.108
3.81
4.57
J
0.004
0.006
0.11
0.15
K
0.395
0.405
10.04
10.28
M
40
50
40
50
Q
0.113
0.130
2.88
3.30
R
0.245
0.255
6.23
6.47
S
0.790
0.810
20.07
20.57
U
0.720
0.730
18.29
18.54
_
_
_
_
STYLE 1:
PIN 1. EMITTER
2. BASE
3. EMITTER
4. COLLECTOR
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