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confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
MOS FIELD EFFECT TRANSISTOR
2SK3573
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D16259EJ2V0DS00 (2nd edition)
Date Published September 2002 NS CP(K)
Printed in Japan
2002
The mark
5
5
5
5
shows major revised points.
DESCRIPTION
The 2SK3573 is N-channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
4.5 V drive available
Low on-state resistance
R
DS(on)1
= 4.0 m
MAX. (V
GS
= 10
V, I
D
= 42
A)
Low gate charge
Q
G
= 68 nC TYP. (V
DD
= 16
V, V
GS
= 10
V, I
D
= 83
A)
Surface mount device available
ABSOLUTE MAXIMUM RATINGS (T
A
= 25C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
20
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
20
V
Drain Current (DC) (T
C
= 25C)
I
D(DC)
83
A
Drain Current (pulse)
Note
I
D(pulse)
332
A
Total Power Dissipation (T
A
= 25C)
P
T1
1.5
W
Total Power Dissipation (T
C
= 25C)
P
T2
105
W
Channel Temperature
T
ch
150
C
Storage Temperature
T
stg
55 to +150
C
Note PW
10
s, Duty Cycle
1%
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3573
TO-220AB
2SK3573-S
TO-262
2SK3573-ZK
TO-263
2SK3573-Z
TO-220SMD
Note
Note TO-220SMD package is produced only in Japan.
5
5
5
5
Data Sheet D16259EJ2V0DS
2
2SK3573
ELECTRICAL CHARACTERISTICS (T
A
= 25C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
10
A
Gate Leakage Current
I
GSS
V
GS
=
20 V, V
DS
= 0 V
100
nA
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.5
2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 42 A
27
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 10 V, I
D
= 42 A
2.9
4.0
m
R
DS(on)2
V
GS
= 4.5 V, I
D
= 42 A
3.8
6.0
m
Input Capacitance
C
iss
V
DS
= 10 V
4000
pF
Output Capacitance
C
oss
V
GS
= 0 V
1550
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
570
pF
Turn-on Delay Time
t
d(on)
V
DD
= 10 V, I
D
= 42 A
23
ns
Rise Time
t
r
V
GS
= 10 V
23
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
110
ns
Fall Time
t
f
40
ns
Total Gate Charge
Q
G
V
DD
= 16 V
68
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V
12
nC
Gate to Drain Charge
Q
GD
I
D
= 83 A
18
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 83 A, V
GS
= 0 V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 83 A, V
GS
= 0 V
77
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
s
115
nC
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
= 1 s
Duty Cycle
1%
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
V
GS
Wave Form
V
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
Data Sheet D16259EJ2V0DS
3
2SK3573
TYPICAL CHARACTERISTICS (T
A
= 25C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
dT - P
e
r
c
ent
age o
f
Ra
t
ed P
o
w
e
r - %
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
C
P
T
- Tot
a
l
P
o
w
e
r Di
s
s
i
pat
i
on -
W
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
C
FORWARD BIAS SAFE OPERATING AREA
I
D
- Drai
n Current
-
A
0.1
1
10
100
1000
0.1
1
10
100
I
D(pulse)
PW = 10
s
1 ms
10 ms
Power Dissipation Limited
R
DS(on)
Limited
T
C
= 25C
Single pulse
100
s
I
D(DC)
DC
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th
(
t
)
-
Trans
i
e
n
t
Ther
m
a
l
Resi
st
anc
e
-
C/W
0.01
0.1
1
10
100
Single pulse
PW - Pulse Width - s
10
100
1 m
10 m
100 m
1
10
100
1000
R
th(ch-A)
= 83.3C/W
R
th(ch-C)
= 1.19C/W
Data Sheet D16259EJ2V0DS
4
2SK3573
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
- Drai
n Current
-
A
0
50
100
150
200
250
300
350
0
0.5
1
1.5
V
GS
= 10 V
4.5 V
Pulsed
V
DS
- Drain to Source Voltage - V
I
D
- Drai
n Current
-
A
0.01
0.1
1
10
100
1000
0
1
2
3
4
5
V
DS
= 10 V
Pulsed
T
ch
= 150C
75C
25C
-
55C
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
GS
(
o
ff)
- Ga
t
e
Cut
-
of
f
V
o
l
t
age
- V
0
0.5
1
1.5
2
2.5
3
-50
0
50
100
150
V
DS
= 10 V
I
D
= 1 mA
T
ch
- Channel Temperature -
C
| y
fs
| -
Forw
ard Trans
f
e
r A
d
m
i
t
t
anc
e -
S
0.1
1
10
100
0.1
1
10
100
T
ch
=
-
55C
25C
75C
150C
V
DS
= 10 V
Pulsed
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS
(
o
n)
-
D
r
a
i
n t
o
S
o
u
r
c
e
O
n
-s
t
a
t
e
R
e
s
i
s
t
anc
e - m
0
2
4
6
8
10
1
10
100
1000
10 V
V
GS
= 4.5 V
Pulsed
I
D
- Drain Current - A
R
DS
(
o
n)
-
D
r
a
i
n t
o
S
o
u
r
c
e
O
n
-s
t
a
t
e
R
e
s
i
s
t
anc
e - m
0
2
4
6
8
10
0
5
10
15
20
I
D
= 42 A
Pulsed
V
GS
- Gate to Source Voltage - V
Data Sheet D16259EJ2V0DS
5
2SK3573
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
R
DS
(
o
n)
-
D
r
a
i
n t
o
S
o
u
r
c
e
O
n
-s
t
a
t
e
R
e
s
i
s
t
anc
e - m
0
1
2
3
4
5
6
7
-50
0
50
100
150
I
D
= 42 A
Pulsed
10 V
V
GS
= 4.5 V
T
ch
- Channel Temperature - C
C
is
s
, C
os
s
, C
rs
s
- C
a
p
a
c
i
t
anc
e -
pF
100
1000
10000
0.1
1
10
100
V
GS
= 0 V
f = 1 MHz
C
iss
C
oss
C
rss
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
t
d(
o
n
)
, t
r
, t
d
(
o
ff)
, t
f
-
S
w
itc
h
in
g
Tim
e
-
n
s
1
10
100
1000
0.1
1
10
100
V
DD
= 10 V
V
GS
= 10 V
R
G
= 10
t
d(off)
t
f
t
d(on)
t
r
I
D
- Drain Current - A
V
DS
- Drai
n
t
o
S
ourc
e
V
o
l
t
age -
V
0
4
8
12
16
20
0
20
40
60
80
0
2
4
6
8
10
I
D
= 83 A
V
DD
= 16 V
10 V
V
GS
V
DS
Q
G
- Gate Charge - nC
V
GS
- Ga
t
e
t
o
S
our
c
e
V
o
l
t
age -
V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
F
-
D
i
o
de Fo
r
w
a
r
d C
u
r
r
ent
-
A
0.01
0.1
1
10
100
1000
0
0.5
1
1.5
V
GS
= 10 V
0 V
Pulsed
V
F(S-D)
- Source to Drain Voltage - V
t
rr
- Rev
e
r
s
e
Re
cov
e
ry
T
i
m
e
-
n
s
1
10
100
1000
0.1
1
10
100
di/dt = 100 A/
s
V
GS
= 0 V
I
D
- Drain Current - A
Data Sheet D16259EJ2V0DS
6
2SK3573
PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB (MP-25)
2) TO-262 (MP-25 Fin Cut)
4.8 MAX.
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1 2 3
10.6 MAX.
10.0 TYP.
3.60.2
4
3.00.3
1.30.2
0.750.1
2.54 TYP.
2.54 TYP.
5.9 MIN.
6.0 MAX.
15.5 MAX.
12.7 MIN.
1.30.2
0.50.2
2.80.2
4.8 MAX.
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1
2
3
10 TYP.
1.30.2
0.750.3
2.54 TYP.
2.54 TYP.
8.5
0.2
12.7 MIN.
1.30.2
0.50.2
2.80.2
1.00
.
5
4
3) TO-263 (MP-25ZK)
4) TO-220SMD (MP-25Z)
Note
10.00.2
8.0 TYP.
2.54
0.70.15
9.150.2
2.450.25
15.250.5
1.350.3
1
2
3
4
2.5
4.450.2
1.30.2
0.50.2
0 to 8
o
1. Gate
2. Drain
3. Source
4. Fin (Drain)
0.4
No plating
8.4 TYP.
0.025 to
0.25
0.25
10 TYP.
1.40.2
1.00.5
2.54 TYP.
2.54 TYP.
8.50.2
1
2
3
3.00.5
1.10.4
4
4.8 MAX.
1.30.2
0.50.2
0.5R TYP.
0.8R TYP.
0.750.3
2.80.2
1. Gate
2. Drain
3. Source
4. Fin (Drain)
Note
This package is produced only in Japan.
EQUIVALENT CIRCUIT
Source (S)
Body
Diode
Gate (G)
Drain (D)
Remark Strong electric field, when exposed to this device, can cause
destruction of the gate oxide and ultimately degrade the device
operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has
occurred.
5
5
5
5
Data Sheet D16259EJ2V0DS
7
2SK3573
[MEMO]
2SK3573
M8E 00. 4
The information in this document is current as of September, 2002. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
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written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
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