1990
DATA SHEET
PHOTO COUPLERS
Document No. P11436EJ2V0DS00 (2nd editon)
(Previous No. LC-2261)
Date Published June 1996 P
Printed in Japan
DESCRIPTION
PS2631, PS2631L are optically coupled isolators containing a GaAs light emitting diode and a silicon photo
transistor.
PS2631 is in a plastic DIP (Dual In-line Package).
PS2631L is lead bending type (Gull-wing) for surface mount.
FEATURES
High input to output isolation voltage. (BV: 5 kV
r.m.s.
MIN.)
High collector to emitter voltage (V
CEO
). (V
CEO
: 200 V MIN.)
High speed switching (t
r
, t
f
= 10
s TYP.)
UL recognized [File No. E72422 (S)]
Taping Product number (PS2631L-E3, E4)
APPLICATIONS
Interface circuit for various instrumentations, control equipments.
AC Line/Digital Logic Isolate high voltage transient
Digital Logic/Digital Logic Eliminate spurious ground loops
Twisted Pair line receiver Eliminate ground loop pick-up
Telephone/Telegraph line receiver Isolate high voltage transient
High Frequency Power Supply Feedback Control Maintain floating ground
PS2631, PS2631L
HIGH COLLECTOR VOLTAGE 6PIN PHOTO COUPLER
PS2631, PS2631L
2
PACKEGE DIMENSIONS (Unit: mm)
DIP (Dual In-line Package)
Lead Bending type (Gull-wing)
PS2631
PS2631L
10.16 MAX.
10.16 MAX.
6
4
1
3
6
4
1
3
3.8
MAX.
2.8 MIN.
4.55 MAX.
0.65
1.34
2.54
MAX.
0.50 0.10
0.25
M
2.54
7.62
6.5
0 to 15
3.8 MAX.
2.54
MAX.
1.34 0.10
0.25
M
2.54
0.05 to 0.2
9.60 0.4
0.9 0.25
7.62
6.5
PIN CONNECTION (Top View)
1. Anode
2. Cathode
3. NC
4. Emitter
5. Collector
6. Base
6
4
5
1
3
2
PS2631, PS2631L
PS2631, PS2631L
3
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Diode
Reverse Voltage
V
R
6
V
Forward Current
I
F
80
mA
Power Dissipation Temperature Coefficient
P
D
/C
1.5
mW/C
Power Dissipation
P
D
150
mW
Transistor
Collector to Emitter Voltage
V
CEO
200
V
Emitter to Collector Voltage
V
ECO
6
V
Collector Current
I
C
50
mA
Power Dissipation Temperature Coefficient
P
C
/C
3.0
mW/C
Power Dissipation
P
C
300
mW
Isolation Voltage*
1)
BV
5 000
V
ac
Storage Temperature
T
stg
55 to +150
C
Operating Temperature
T
opt
55 to +100
C
*1) AC voltage for 1 minute at T
A
= 25
C, RH = 60 % between input and output.
ELECTRICAL CHARACTERISTICS (T
A
= 25
C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Diode
Forward Voltage
V
F
1.1
1.4
V
I
F
= 10 mA
Reverse Current
I
R
5
A
V
R
= 5 V
Capacitance
C
t
50
pF
V = 0, f = 1.0 MHz
Transistor
Collector to Emitter Dark Current
I
CEO
200
nA
V
CE
= 200 V, I
F
= 0
DC Current Gain
h
FE
300
I
C
= 2 mA, V
CE
= 5.0 V
Coupled
Current Transfer Ratio*
2)
CTR (I
C
/I
F
)
50
280
%
I
F
= 5 mA, V
CE
= 5.0 V
Collector Saturation Voltage
V
CE(sat)
0.25
V
I
F
= 10 mA, I
C
= 2.0 mA
Isolation Resistance
R
1-2
10
11
V
in-out
= 1.0 kV
Isolation Capacitance
C
1-2
0.5
pF
V = 0, f = 1.0 MHz
Rise Time*
3)
t
r
10
s
V
CC
= 5 V, I
F
= 10 mA, R
L
= 1 k
Fall Time*
3)
t
f
10
s
V
CC
= 5 V, I
F
= 10 mA, R
L
= 1 k
*2)
CTR rank (%)
*3) Test Circuit for Switching Time
K : 130 to 280
L : 80 to 150
M : 50 to 100
50
Pulse width = 100 s
Duty cycle = 1/10
R
L
= 1 k
V
OUT
V
CC
= 5 V
I
F
Pulse input
PS2631, PS2631L
4
TYPICAL CHARACTERISTICS (T
A
= 25
C)
CTR = 120 %
0.7
Forward Voltage V
F
(V)
Forward Current I
F
(mA)
FORWARD CURRENT vs.
FORWARD VOLTAGE
100
10
1
0.1
50
5
0.5
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
100 C
60 C
25 C
0 C
25 C
55 C
60
50
40
30
20
10
0
25
20
10
5
30
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Collector to Emitter Voltage V
CE
(V)
Collector Current I
CE
(mA)
30 mA
I
F
= 5 mA
20 mA
10 mA
15
15 mA
40 mA
50 mA
60 mA
80 mA
50
25
0
25
50
75
100
Ambient Temperature T
A
(C)
Collector Cutoff Current I
CEO
(nA)
10000
1000
100
10
1
COLLECTOR TO EMITTER DARK CURRENT
vs. AMBIENT TEMPERATURE
NORMALIZED OUTPUT CURRENT vs.
AMBIENT TEMPERATURE
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
50
25
0
25
50
75
100
Normalized to 1.0
at T
A
= 25 C
I
F
= 5 mA
V
CE
= 5 V
,,
,,
,
Ambient Temperature T
A
(C)
V
CE
= 200 V
40 V
20 V
10 V
240
220
200
180
160
140
120
100
80
60
40
20
V
CE
= 5 V
0.1
1.0
10
100
0.5
5.0
50
I
F
(mA)
CURRENT TRANSFER RATIO (CTR)
vs. FORWARD CURRENT
CTR = 200%
CTR = 190 %
CTR = 60%
1.0
0.8
0.6
0.4
0.2
NORMALIZED OUTPUT CURRENT
vs. BASE RESISTANCE
Base to Emitter Resistance R
B
(
)
CTR (Relative Value)
100 k
1 M
500 k
50 k
I
F
= 5 mA
10 mA
20 mA
CTR (Relative Value)
CTR (%)
PS2631, PS2631L
5
R
L
= 1 k
10 mA
t
f
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
150
100
50
0
25
50
75
100
125
150
Ambient Temperature T
A
(C)
Power Dissipation P
D
(mW)
1.5 mW/C
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
300
200
100
0
25
50
75
100
125
150
Ambient Temperature T
A
(C)
Power Dissipation P
C
(mW)
3.0 mW/C
t
s
t
d
t
r
I
F
= 10 mA
V
CC
= 5 V
SWITCHING TIME vs.
LOAD RESISTANCE
Load Resistance R
L
(k
)
1
5
10
50 100
1000
100
10
1
Switching Time ( s)
50
5
0.5
10
1.0
0.1
0
0.2
0.4
0.6
0.8
1.0
Collector Saturation Voltage V
CE (sat)
(V)
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
Collector Current I
C
(mA)
I
F
= 5 mA
80 mA
40 mA
20 mA
1.0
0.8
0.6
0.4
0.2
0
500
1 k
5 k 10 k
50 k 100 k
500 k
Frequency (Hz)
FREQUENCY RESPONSE
R
L
= 100
Relative Output A
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