6-PIN DIP, 20
LOW ON-STATE
RESISTANCE 100 pF LOW OUTPUT
CAPACITANCE 1-ch OPTICAL COUPLED MOS FET
PS7341A-1B
PS7341AL-1B
FEATURES
HIGH ISOLATION VOLTAGE
BV
= 3,750 Vr.m.s.
1 CHANNEL TYPE
1 B output
DESIGNED FOR AC/DC SWITCHING LINE CHANGER
SMALL PACKAGE
6 pin DIP
LOW OUTPUT CAPACITANCE
C
out
= 100 pF TYP
LOW ON-STATE RESISTANCE
R
on2
= 20
TYP
LOW LED OPERATING CURRENT
I
F
= 2 mA
LOW OFFSET VOLTAGE
SURFACE MOUNT TYPE LEAD AVAILABLE
PS7341AL-1B
DESCRIPTION
The PS7341A-1B and PS7341AL-1B are solid state relays
containing a GaAs LEDs on the light emitting side (input side)
and normally close (N.C.) contact MOS FETs on the output
side. They are suitable for analog signal control because of
their low offset and high linearity.
APPLICATIONS
EXCHANGE EQUIPMENT
MEASUREMENT EQUIPMENT
FA/OA EQUIPMENT
Input
0
90%
10%
Output
t
ON
t
OFF
Vo = 5 V
50%
PS7341A-1B, PS7341AL-1B
PRELIMINARY DATA SHEET
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C)
PART NUMBER
PS7341A-1B, PS7341AL-1B
SYMBOLS
PARAMETERS
UNITS
MIN
TYP
MAX
V
F
Forward Voltage, I
F
= 10 mA
V
1.2
1.4
I
R
Reverse Current, V
R
= 5 V
A
5.0
I
LOFF
Off-State Leakage Current, I
F
= 10 mA, V
D
= 400 V
A
10
C
OUT
Output Capacitance, I
F
= 10 mA, V
D
= 0 V, f = 1 MHz
pF
100
R
ON1
On-State Resistance, I
F
= 0 mA, I
L
= 10 mA
26
35
R
ON2
On-State Resistance, I
F
= 0 mA, I
L
= 120 mA, t
10 ms
20
30
t
ON
Turn-On Time
1
ms
0.2
t
OFF
Turn-Off Time
1
ms
1.5
R
l-O
Isolation Resistance, V
I-O
= 1.0 kV
DC
10
9
C
l-O
Isolation Capacitance, V = 0 V, f = 1 MHz
pF
1.1
MOS
FET
Diode
I
F
= 10 mA, V
O
= 5 V, PW
10 ms
Notes:
1. Test Circuit for switching Time
Coupled
Pulse Input
Input monitor
I
F
V
L
V
o
monitor
R
L
R
in
California Eastern Laboratories
PS7341A-1B, PS7341AL-1B
SYMBOLS
PARAMETERS
UNITS
RATINGS
PS7341A-1B
PS7341AL-1B
Diode
V
R
Reverse Voltage
V
5.0
I
F
Forward Current (DC)
mA
50
P
D
Power Dissipation
mW
50
I
FP
Peak Forward Current
2
A
1
MOSFET
V
L
Break Down Voltage
V
400
I
L
Continuous Load Current
3
mA
Connection A
120
Connection B
160
Connection C
240
I
LP
Pulse Load Current
4
mA
240
P
D
Power Dissipation
mW
560
Coupled
BV
Isolation Voltage
5
Vr.m.s.
3,750
P
T
Total Power Dissipation
mW
610
T
A
Operating Ambient Temp.
C
-40 to +85
T
STG
Storage Temperature
C
-40 to +125
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25
C)
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. PW = 100
s, Duty Cycle = 1%
3. Conditions: I
F
2 mA. The following types of loaad connections
are available.
4. PW = 100 ms, 1 shot
5. AC voltage for 1 minute at T
A
= 25
C, RH = 60 % between input
and output.
SYMBOL
PARAMETER
UNITS MIN
TYP MAX
I
F
LED Operating Current
mA
2
10
20
V
F
LED Off Voltage
V
0
0.5
RECOMMENDED
OPERATING CONDITIONS
(T
A
= 25
C)
(Top View)
4. MOSFET Drain
5. MOSFET Source
6. MOSFET Drain
OUTLINE DIMENSIONS
(Units in mm)
PS7341A-1B
1. LED Anode
2. LED Cathode
3. NC
9.25
0.5
0.25
M
1.34
0.1
2.54 2.54 MAX
7.62
0 to 15
1
3
6
4
5
2
3.5
0.3
3.3
0.3
4.15
0.3
6.5
0.5
0.5
0.1
PS7341AL-1B
1. LED Anode
2. LED Cathode
3. NC
4. MOSFET Drain
5. MOSFET Source
6. MOSFET Drain
(Top View)
Connection B
Connection C
Connection A
1
2
3
6
5
4
1
2
3
6
5
4
6
5
4
1
2
3
L
L
I
L
L
L
I
L
+ I
L
1
2
3
6
5
4
I
L
I
L
I
L
I
L
+
+
+
-
-
-
V
L
(AC/DC)
V
L
(DC)
V
L
(DC)
V
L
(DC)
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 (408) 988-3500 Telex 34-6393 FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) Internet: http://WWW.CEL.COM
07/27/2001
DATA SUBJECT TO CHANGE WITHOUT NOTICE
9.25
0.5 MAX.
0.25
M
1.34
0.1
2.54
1
3
6
4
5
2
3.5
0.3
6.5
0.5
0.10
0.9
0.25
9.60
0.4
+0.10
-0.05
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