NTE2351 (NPN) & NTE2352 (PNP)
Silicon Complementary Transistors
Darlington Power Amp, Switch
Features:
D
High DC Current Gain: h
FE (1)
= 2000 Min @ V
CE
= 2V, I
C
= 1A
D
Low Saturation Voltage: V
CE(sat)
= 1.5V Max @ I
C
= 3A
Absolute Maximum Ratings: (T
A
= +25
C unless otherwise specified)
CollectorBase Voltage, V
CBO
100V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CollectorEmitter Voltage, V
CEO
80V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
EmitterBase Voltage, V
EBO
5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
4A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
400mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
T
A
= +25
C
1W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +25
C
15W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
+150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
55
to +150
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (T
A
= +25
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector CutOff Current
I
CBO
V
CB
= 100V, I
E
= 0
20
A
Emitter CutOff Current
I
EBO
V
EB
= 5V, I
C
= 0
2.5
mA
CollectorEmitter Breakdown Voltage V
(BR)CEO
I
C
= 10mA, I
B
= 0
80
V
DC Current Gain
h
FE (1)
V
CE
= 2V, I
C
= 1A
2000
h
FE (2)
V
CE
= 2V, I
C
= 3A
1000
CollectorEmitter Saturation Voltage
V
CE(sat)
I
C
= 3A, I
B
= 6mA
1.5
V
BaseEmitter Saturation Voltage
V
BE(sat)
I
C
= 3A, I
B
= 6mA
2.0
V
Switching Characteristics
TurnOn Time
t
on
V
CC
= 30V, I
B1
= I
B2
= 6mA,
0.2
s
Storage Time
t
stg
Duty Cycle
1%
1.5
s
Fall Time
t
f
0.6
s
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