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Электронный компонент: BC558B

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Semiconductor Components Industries, LLC, 2001
June, 2000 Rev. 1
1
Publication Order Number:
BC556/D
BC556B, BC557, A, B, C,
BC558B, C
Amplifier Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
BC556
BC557
BC558
VCEO
65
45
30
Vdc
Collector-Base Voltage
BC556
BC557
BC558
VCBO
80
50
30
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
Collector Current Continuous
Collector Current
Peak
IC
ICM
100
200
mAdc
Base Current Peak
IBM
200
mAdc
Total Device Dissipation
@ TA = 25
C
Derate above 25
C
PD
625
5.0
mW
mW/
C
Total Device Dissipation
@ TC = 25
C
Derate above 25
C
PD
1.5
12
Watts
mW/
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to
+150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction to Ambient
R
JA
200
C/W
Thermal Resistance,
Junction to Case
R
JC
83.3
C/W
http://onsemi.com
Device
Package
Shipping
ORDERING INFORMATION
BC556B
TO92
CASE 29
TO92
STYLE 17
5000 Units/Box
3
2
1
BC556BRL1
TO92
2000/Tape & Reel
COLLECTOR
1
2
BASE
3
EMITTER
BC556BZL1
TO92
2000/Ammo Pack
BC557
TO92
5000 Units/Box
BC557AZL1
TO92
2000/Ammo Pack
BC557B
TO92
5000 Units/Box
BC557BRL1
TO92
2000/Tape & Reel
BC557BZL1
TO92
2000/Ammo Pack
BC557C
TO92
5000 Units/Box
BC557CZL1
TO92
2000/Ammo Pack
BC558B
TO92
5000 Units/Box
BC558BRL1
TO92
2000/Tape & Reel
BC558BZL1
TO92
2000/Ammo Pack
BC558C
TO92
5000 Units/Box
BC558CRL1
TO92
2000/Tape & Reel
BC558ZL1
TO92
2000/Ammo Pack
BC558CZL1
TO92
2000/Ammo Pack
BC558BRL
TO92
2000/Tape & Reel
BC557ZL1
TO92
2000/Ammo Pack
BC557A
TO92
5000 Units/Box
BC556B, BC557, A, B, C, BC558B, C
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(IC = 2.0 mAdc, IB = 0)
BC556
BC557
BC558
V(BR)CEO
65
45
30




V
CollectorBase Breakdown Voltage
(IC = 100
Adc)
BC556
BC557
BC558
V(BR)CBO
80
50
30




V
EmitterBase Breakdown Voltage
(IE = 100
m
Adc, IC = 0)
BC556
BC557
BC558
V(BR)EBO
5.0
5.0
5.0




V
CollectorEmitter Leakage Current
(VCES = 40 V)
BC556
(VCES = 20 V)
BC557
BC558
(VCES = 20 V, TA = 125
C)
BC556
BC557
BC558
ICES





2.0
2.0
2.0


100
100
100
4.0
4.0
4.0
nA
A
BC556B, BC557, A, B, C, BC558B, C
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 10
Adc, VCE = 5.0 V)
A Series Device
B Series Devices
C Series Devices
(IC = 2.0 mAdc, VCE = 5.0 V)
BC557
A Series Device
B Series Devices
C Series Devices
(IC = 100 mAdc, VCE = 5.0 V)
A Series Device
B Series Devices
C Series Devices
hFE


120
120
180
420


90
150
270
170
290
500
120
180
300


800
220
460
800


CollectorEmitter Saturation Voltage
(IC = 10 mAdc, IB = 0.5 mAdc)
(IC = 10 mAdc, IB = see Note 1)
(IC = 100 mAdc, IB = 5.0 mAdc)
VCE(sat)


0.075
0.3
0.25
0.3
0.6
0.65
V
BaseEmitter Saturation Voltage
(IC = 10 mAdc, IB = 0.5 mAdc)
(IC = 100 mAdc, IB = 5.0 mAdc)
VBE(sat)

0.7
1.0

V
BaseEmitter On Voltage
(IC = 2.0 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 5.0 Vdc)
VBE(on)
0.55
0.62
0.7
0.7
0.82
V
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
BC556
BC557
BC558
fT


280
320
360


MHz
Output Capacitance
(VCB = 10 V, IC = 0, f = 1.0 MHz)
Cob
3.0
6.0
pF
Noise Figure
(IC = 0.2 mAdc, VCE = 5.0 V,
BC556
RS = 2.0 k
W
, f = 1.0 kHz,
f = 200 Hz)
BC557
BC558
NF


2.0
2.0
2.0
10
10
10
dB
SmallSignal Current Gain
(IC = 2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz)
BC557
A Series Device
B Series Devices
C Series Devices
hfe
125
125
240
450



900
260
500
900
Note 1: IC = 10 mAdc on the constant base current characteristics, which yields the point IC = 11 mAdc, VCE = 1.0 V.
BC556B, BC557, A, B, C, BC558B, C
http://onsemi.com
4
BC557/BC558
Figure 1. Normalized DC Current Gain
IC, COLLECTOR CURRENT (mAdc)
2.0
Figure 2. "Saturation" and "On" Voltages
IC, COLLECTOR CURRENT (mAdc)
-0.2
0.2
Figure 3. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 4. BaseEmitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
-0.6
-0.7
-0.8
-0.9
-1.0
-0.5
0
-0.2
-0.4
-0.1
-0.3
1.6
1.2
2.0
2.8
2.4
-1.2
-1.6
-2.0
-0.02
-1.0
-10
0
-20
-0.1
-0.4
-0.8
h FE
, NORMALIZED DC CURRENT
GAIN
V
,
VOL
T
AGE (VOL
TS)
V CE
, COLLECT
OR-EMITTER VOL
T
AGE (V)
VB
,
TEMPERA
TURE COEFFICIENT
(mV/
C)
1.5
1.0
0.7
0.5
0.3
-0.2
-10
-100
-1.0
TA = 25
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = -10 V
VCE = -10 V
TA = 25
C
-55
C to +125
C
IC = -100 mA
IC = -20 mA
-0.5 -1.0 -2.0
-5.0 -10 -20
-50 -100 -200
-0.1 -0.2
-0.5 -1.0 -2.0
-5.0 -10 -20
-50 -100
IC = -200 mA
IC = -50 mA
IC =
-10 mA
Figure 5. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10
Figure 6. CurrentGain Bandwidth Product
IC, COLLECTOR CURRENT (mAdc)
-0.4
1.0
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
-0.5
C, CAP
ACIT
ANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT
(MHz)
T
TA = 25
C
Cob
Cib
-0.6
-1.0
-2.0
-4.0 -6.0
-10
-20 -30 -40
150
-1.0
-2.0 -3.0 -5.0
-10
-20 -30 -50
VCE = -10 V
TA = 25
C
TA = 25
C
1.0
BC556B, BC557, A, B, C, BC558B, C
http://onsemi.com
5
BC556
Figure 7. DC Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 8. "On" Voltage
IC, COLLECTOR CURRENT (mA)
-0.8
-1.0
-0.6
-0.2
-0.4
1.0
2.0
-0.1
-1.0
-10
-200
-0.2
0.2
0.5
-0.2
-1.0
-10
-200
TJ = 25
C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = -5.0 V
Figure 9. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 10. BaseEmitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
-1.0
-1.2
-1.6
-2.0
-0.02
-1.0
-10
0
-20
-0.1
-0.4
-0.8
V CE
, COLLECT
OR-EMITTER VOL
T
AGE (VOL
TS)
VB
,
TEMPERA
TURE COEFFICIENT
(mV/
C)
-0.2
-2.0
-10
-200
-1.0
TJ = 25
C
IC =
-10 mA
h FE
, DC CURRENT
GAIN (NORMALIZED)
V
,
VOL
T
AGE (VOL
TS)
VCE = -5.0 V
TA = 25
C
0
-0.5
-2.0
-5.0
-20
-50 -100
-0.05
-0.2
-0.5
-2.0
-5.0
-100 mA
-20 mA
-1.4
-1.8
-2.2
-2.6
-3.0
-0.5
-5.0
-20
-50 -100
-55
C to 125
C
VB for VBE
-2.0 -5.0
-20 -50 -100
Figure 11. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
40
Figure 12. CurrentGain Bandwidth Product
IC, COLLECTOR CURRENT (mA)
-0.1 -0.2
-1.0
-50
2.0
-2.0
-10
-100
100
200
500
50
20
20
10
6.0
4.0
-1.0
-10
-100
VCE = -5.0 V
C, CAP
ACIT
ANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT T
-0.5
-5.0
-20
TJ = 25
C
Cob
Cib
8.0
-50 mA
-200 mA
BC556B, BC557, A, B, C, BC558B, C
http://onsemi.com
6
Figure 13. Thermal Response
t, TIME (ms)
1.0
r(t), TRANSIENT
THERMAL
2.0
5.0
1.0
0.5
0.2
0.1
RESIST
ANCE (NORMALIZED)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
20
50
10
200
500
100
1.0 k
2.0 k
5.0 k
10
Figure 14. Active Region Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (V)
-200
-1.0
I C
, COLLECT
OR CURRENT
(mA)
TA = 25
C
D = 0.5
0.2
0.1
0.05
SINGLE PULSE
SINGLE PULSE
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
3 ms
TJ = 25
C
Z
q
JC
(t) = (t) R
q
JC
R
q
JC
= 83.3
5
C/W MAX
Z
q
JA
(t) = r(t) R
q
JA
R
q
JA
= 200
5
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
T
C
= P
(pk)
R
q
JC
(t)
t1
t2
P(pk)
DUTY CYCLE, D = t1/t2
-100
-50
-10
-5.0
-2.0
-5.0
-10
-30 -45 -65 -100
1 s
BC558
BC557
BC556
The safe operating area curves indicate ICVCE limits of the
transistor that must be observed for reliable operation. Collector
load lines for specific circuits must fall below the limits indicated by
the applicable curve.
The data of Figure 14 is based upon TJ(pk) = 150
C; TC or TA is
variable depending upon conditions. Pulse curves are valid for
duty cycles to 10% provided TJ(pk)
150
C. TJ(pk) may be
calculated from the data in Figure 13. At high case or ambient
temperatures, thermal limitations will reduce the power than can
be handled to values less than the limitations imposed by second
breakdown.
BC556B, BC557, A, B, C, BC558B, C
http://onsemi.com
7
PACKAGE DIMENSIONS
TO92
(TO226)
CASE 2911
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION XX
C
V
D
N
N
X X
SEATING
PLANE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.175
0.205
4.45
5.20
B
0.170
0.210
4.32
5.33
C
0.125
0.165
3.18
4.19
D
0.016
0.021
0.407
0.533
G
0.045
0.055
1.15
1.39
H
0.095
0.105
2.42
2.66
J
0.015
0.020
0.39
0.50
K
0.500
---
12.70
---
L
0.250
---
6.35
---
N
0.080
0.105
2.04
2.66
P
---
0.100
---
2.54
R
0.115
---
2.93
---
V
0.135
---
3.43
---
1
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
BC556B, BC557, A, B, C, BC558B, C
http://onsemi.com
8
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without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be
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PUBLICATION ORDERING INFORMATION
JAPAN: ON Semiconductor, Japan Customer Focus Center
4321 NishiGotanda, Shinagawaku, Tokyo, Japan 1410031
Phone: 81357402700
Email: r14525@onsemi.com
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
BC556/D
Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
Fax: 3036752176 or 8003443867 Toll Free USA/Canada
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