Semiconductor Components Industries, LLC, 2001
June, 2000 Rev. 1
1
Publication Order Number:
BC636/D
BC636, BC636-16, BC638,
BC640, BC640-16
High Current Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
BC636
BC638
BC640
VCEO
45
60
80
Vdc
Collector-Base Voltage
BC636
BC638
BC640
VCBO
45
60
80
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
Collector Current -- Continuous
IC
0.5
Adc
Total Device Dissipation
@ TA = 25
C
Derate above 25
C
PD
625
5.0
mW
mW/
C
Total Device Dissipation
@ TC = 25
C
Derate above 25
C
PD
1.5
12
Watts
mW/
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
55 to
+150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction to Ambient
R
JA
200
C/W
Thermal Resistance,
Junction to Case
R
JC
83.3
C/W
Device
Package
Shipping
ORDERING INFORMATION
BC636
TO92
http://onsemi.com
CASE 29
TO92
STYLE 14
5000 Units/Box
3
2
1
BC636ZL1
TO92
2000/Ammo Pack
COLLECTOR
2
3
BASE
1
EMITTER
BC63616ZL1
TO92
2000/Ammo Pack
BC638
TO92
5000 Units/Box
BC638ZL1
TO92
2000/Ammo Pack
BC640
TO92
5000 Units/Box
BC640ZL1
TO92
2000/Ammo Pack
BC64016
TO92
5000 Units/Box
BC636, BC63616, BC638, BC640, BC64016
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TA = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
BC636
BC638
BC640
V(BR)CEO
45
60
80
--
--
--
--
--
--
Vdc
CollectorBase Breakdown Voltage
(IC = 100
Adc, IE = 0)
BC636
BC638
BC640
V(BR)CBO
45
60
80
--
--
--
--
--
--
Vdc
EmitterBase Breakdown Voltage
(IE = 10
m
Adc, IC = 0)
V(BR)EBO
5.0
--
--
Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
(VCB = 30 Vdc, IE = 0, TA = 125
C)
ICBO
--
--
--
--
100
10
nAdc
Adc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 5.0 mAdc, VCE = 2.0 Vdc)
(IC = 150 mAdc, VCE = 2.0 Vdc)
BC636
BC63616
BC638
BC640
BC64016
(IC = 500 mA, VCE = 2.0 V)
hFE
25
40
100
40
40
100
25
--
--
--
--
--
--
--
--
250
250
160
160
250
--
--
CollectorEmitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
--
--
0.25
0.5
0.5
--
Vdc
BaseEmitter On Voltage
(IC = 500 mAdc, VCE = 2.0 Vdc)
VBE(on)
--
--
1.0
Vdc
DYNAMIC CHARACTERISTICS
CurrentGain -- Bandwidth Product
(IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz)
fT
--
150
--
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
--
9.0
--
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cib
--
110
--
pF
1. Pulse Test: Pulse Width
300
s, Duty Cycle 2.0%.
BC636, BC63616, BC638, BC640, BC64016
http://onsemi.com
3
I C
, COLLECT
OR CURRENT
(mA)
h FE
, DC CURRENT
GAIN
f, CURRENT-GAIN BANDWIDTH PRODUCT
(MHz)
T
V
,
VOL
T
AGE (VOL
TS)
V,
TEMPERA
TURE COEFFICIENTS (mV/
C)
-1000
-1
-2
-5
-10
-20
-50
-100
-200
-500
-100
-1
-2 -3 -4 -5 -7 -10
-20 -30-40 -50 -70
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. Active Region Safe Operating Area
BC636
BC638
BC640
PD TA 25
C
PD TC 25
C
SOA = 1S
PD TC 25
C
PD TA 25
C
500
200
100
50
20
-1
-3 -5
-10
-30 -50 -100
-300 -500 -1000
IC, COLLECTOR CURRENT (mA)
Figure 2. DC Current Gain
VCE = -2 V
500
300
100
50
20
-1
-10
-100
-1000
IC, COLLECTOR CURRENT (mA)
Figure 3. Current Gain Bandwidth Product
-1
-0.8
-0.6
-0.4
-0.2
0
-1
-10
IC, COLLECTOR CURRENT (mA)
Figure 4. "Saturation" and "On" Voltages
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = -2 V
VCE(sat) @ IC/IB = 10
-0.2
-1.0
-2.2
-1.6
IC, COLLECTOR CURRENT (mA)
Figure 5. Temperature Coefficients
VCE = -2 VOLTS
T = 0
C to +100
C
V for VBE
-A
-B
-L
VCE = -2 V
-100
-1000
-1
-3 -5
-10
-30 -50 -100
-300 -500 -1000
BC636, BC63616, BC638, BC640, BC64016
http://onsemi.com
4
PACKAGE DIMENSIONS
TO92
(TO226)
CASE 2911
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION XX
C
V
D
N
N
X X
SEATING
PLANE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.175
0.205
4.45
5.20
B
0.170
0.210
4.32
5.33
C
0.125
0.165
3.18
4.19
D
0.016
0.021
0.407
0.533
G
0.045
0.055
1.15
1.39
H
0.095
0.105
2.42
2.66
J
0.015
0.020
0.39
0.50
K
0.500
---
12.70
---
L
0.250
---
6.35
---
N
0.080
0.105
2.04
2.66
P
---
0.100
---
2.54
R
0.115
---
2.93
---
V
0.135
---
3.43
---
1
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
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without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or
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Phone: 81357402700
Email: r14525@onsemi.com
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For additional information, please contact your local
Sales Representative.
BC636/D
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