This document,
MC74HC4066/D
has been canceled and
replaced by
MC74HC4066A/D
LAN was sent 9/28/01
http://onsemi.com
MC54/74HC4066
Quad Analog Switch/
Multiplexer/Demultiplexer
HighPerformance SiliconGate CMOS
The MC54/74HC4066 utilizes silicongate CMOS technology to achieve
fast propagation delays, low ON resistances, and low OFFchannel leakage
current. This bilateral switch/multiplexer/demultiplexer controls analog and
digital voltages that may vary across the full powersupply range (from V
CC
to GND).
The HC4066 is identical in pinout to the metalgate CMOS MC14016 and
MC14066. Each device has four independent switches. The device has
been designed so that the ON resistances (R
ON
) are much more linear over
input voltage than R
ON
of metalgate CMOS analog switches.
This device is identical in both function and pinout to the HC4016. The
ON/OFF control inputs are compatible with standard CMOS outputs; with
pullup resistors, they are compatible with LSTTL outputs. For analog
switches with voltagelevel translators, see the HC4316.
Fast Switching and Propagation Speeds
High ON/OFF Output Voltage Ratio
Low Crosstalk Between Switches
Diode Protection on All Inputs/Outputs
Wide PowerSupply Voltage Range (V
CC
GND) = 2.0 to 12.0 Volts
Analog Input Voltage Range (V
CC
GND) = 2.0 to 12.0 Volts
Improved Linearity and Lower ON Resistance over Input Voltage than
the MC14016 or MC14066 or HC4016
Low Noise
Chip Complexity: 44 FETs or 11 Equivalent Gates
LOGIC DIAGRAM
X
A
Y
A
1
2
A ON/OFF CONTROL 13
X
B
Y
B
4
3
B ON/OFF CONTROL 5
X
C
Y
C
8
9
C ON/OFF CONTROL 6
X
D
Y
D
11
10
D ON/OFF CONTROL 12
ANALOG
OUTPUTS/INPUTS
ANALOG INPUTS/OUTPUTS = X
A
, X
B
, X
C
, X
D
PIN 14 = V
CC
PIN 7 = GND
MC54/74HC4066
FUNCTION TABLE
PIN ASSIGNMENT
11
12
13
14
8
9
10
5
4
3
2
1
7
6
Y
D
X
D
D ON/OFF
CONTROL
A ON/OFF
CONTROL
V
CC
X
C
Y
C
X
B
Y
B
Y
A
X
A
GND
C ON/OFF
CONTROL
B ON/OFF
CONTROL
On/Off Control
State of
Input
Analog Switch
L
Off
H
On
D SUFFIX
SOIC PACKAGE
CASE 751A03
N SUFFIX
PLASTIC PACKAGE
CASE 64606
ORDERING INFORMATION
MC54HCXXXXJ
MC74HCXXXXN
MC74HCXXXXD
MC74HCXXXXDT
Ceramic
Plastic
SOIC
TSSOP
1
14
1
14
1
14
DT SUFFIX
TSSOP PACKAGE
CASE 948G01
J SUFFIX
CERAMIC PACKAGE
CASE 63208
1
14
MC54/74HC4066
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
V
CC
Positive DC Supply Voltage (Referenced to GND)
0.5 to + 14.0
V
V
IS
Analog Input Voltage (Referenced to GND)
0.5 to V
CC
+ 0.5
V
V
in
Digital Input Voltage (Referenced to GND)
1.5 to V
CC
+ 1.5
V
I
DC Current Into or Out of Any Pin
25
mA
P
D
Power Dissipation in Still Air, Plastic or Ceramic DIP
SOIC Package
TSSOP Package
750
500
450
mW
T
stg
Storage Temperature
65 to + 150
_
C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP, SOIC or TSSOP Package)
(Ceramic DIP)
260
300
_
C
* Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
Derating -- Plastic DIP: 10 mW/
_
C from 65
_
to 125
_
C
Ceramic DIP: 10 mW/
_
C from 100
_
to 125
_
C
SOIC Package: 7 mW/
_
C from 65
_
to 125
_
C
TSSOP Package: 6.1 mW/
_
C from 65
_
to 125
_
C
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
V
CC
Positive DC Supply Voltage (Referenced to GND)
2.0
12.0
V
V
IS
Analog Input Voltage (Referenced to GND)
GND
V
CC
V
V
in
Digital Input Voltage (Referenced to GND)
GND
V
CC
V
V
IO
*
Static or Dynamic Voltage Across Switch
--
1.2
V
T
A
Operating Temperature, All Package Types
55
+ 125
_
C
t
r
, t
f
Input Rise and Fall Time, ON/OFF Control
Inputs (Figure 10)
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 9.0 V
V
CC
= 12.0 V
0
0
0
0
1000
500
400
250
ns
* For voltage drops across the switch greater than 1.2 V (switch on), excessive V
CC
current may
be drawn; i.e., the current out of the switch may contain both V
CC
and switch input components.
The reliability of the device will be unaffected unless the Maximum Ratings are exceeded.
DC ELECTRICAL CHARACTERISTIC
Digital Section
(Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Test Conditions
V
CC
V
55 to
25
_
C
v
85
_
C
v
125
_
C
Unit
V
IH
Minimum HighLevel Voltage
ON/OFF Control Inputs
R
on
= Per Spec
2.0
4.5
9.0
12.0
1.5
3.15
6.3
8.4
1.5
3.15
6.3
8.4
1.5
3.15
6.3
8.4
V
V
IL
Maximum LowLevel Voltage
ON/OFF Control Inputs
R
on
= Per Spec
2.0
4.5
9.0
12.0
0.3
0.9
1.8
2.4
0.3
0.9
1.8
2.4
0.3
0.9
1.8
2.4
V
I
in
Maximum Input Leakage Current
ON/OFF Control Inputs
V
in
= V
CC
or GND
12.0
0.1
1.0
1.0
A
I
CC
Maximum Quiescent Supply
Current (per Package)
V
in
= V
CC
or GND
V
IO
= 0 V
6.0
12.0
2
8
20
80
40
160
A
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this highimpedance cir-
cuit. For proper operation, V
in
and
V
out
should be constrained to the
range GND
v
(V
in
or V
out
)
v
V
CC
.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or V
CC
).
Unused outputs must be left open.
I/O pins must be connected to a
properly terminated line or bus.
MC54/74HC4066
DC ELECTRICAL CHARACTERISTICS
Analog Section
(Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Test Conditions
V
CC
V
55 to
25
_
C
v
85
_
C
v
125
_
C
Unit
R
on
Maximum "ON" Resistance
V
in
= V
IH
V
IS
= V
CC
to GND
I
S
v
2.0 mA (Figures 1, 2)
2.0
4.5
9.0
12.0
--
170
85
85
--
215
106
106
--
255
130
130
V
in
= V
IH
V
IS
= V
CC
or GND (Endpoints)
I
S
v
2.0 mA (Figures 1, 2)
2.0
4.5
9.0
12.0
--
85
63
63
--
106
78
78
--
130
95
95
R
on
Maximum Difference in "ON"
Resistance Between Any Two
Channels in the Same Package
V
in
= V
IH
V
IS
= 1/2 (V
CC
GND)
I
S
v
2.0 mA
2.0
4.5
9.0
12.0
--
30
20
20
--
35
25
25
--
40
30
30
I
off
Maximum OffChannel Leakage
Current, Any One Channel
V
in
= V
IL
V
IO
= V
CC
or GND
Switch Off (Figure 3)
12.0
0.1
0.5
1.0
A
I
on
Maximum OnChannel Leakage
Current, Any One Channel
V
in
= V
IH
V
IS
= V
CC
or GND
(Figure 4)
12.0
0.1
0.5
1.0
A
At supply voltage (V
CC
GND) approaching 2 V the analog switchon resistance becomes extremely nonlinear. Therefore, for lowvoltage
operation, it is recommended that these devices only be used to control digital signals.
AC ELECTRICAL CHARACTERISTICS
(C
L
= 50 pF, ON/OFF Control Inputs: t
r
= t
f
= 6 ns)
Guaranteed Limit
Symbol
Parameter
V
CC
V
55 to
25
_
C
v
85
_
C
v
125
_
C
Unit
t
PLH
,
t
PHL
Maximum Propagation Delay, Analog Input to Analog Output
(Figures 8 and 9)
2.0
4.5
9.0
12.0
50
10
10
10
65
13
13
13
75
15
15
15
ns
t
PLZ
,
t
PHZ
Maximum Propagation Delay, ON/OFF Control to Analog Output
(Figures 10 and 11)
2.0
4.5
9.0
12.0
150
30
30
30
190
38
30
30
225
45
30
30
ns
t
PZL
,
t
PZH
Maximum Propagation Delay, ON/OFF Control to Analog Output
(Figures 10 and 1 1)
2.0
4.5
9.0
12.0
125
25
25
25
160
32
32
32
185
37
37
37
ns
C
Maximum Capacitance
ON/OFF Control Input
--
10
10
10
pF
Control Input = GND
Analog I/O
Feedthrough
--
--
35
1.0
35
1.0
35
1.0
Typical @ 25
C, V
CC
= 5.0 V
C
PD
Power Dissipation Capacitance (Per Switch) (Figure 13)*
15
pF
MC54/74HC4066
ADDITIONAL APPLICATION CHARACTERISTICS
(Voltages Referenced to GND Unless Noted)
Symbol
Parameter
Test Conditions
V
CC
V
Limit*
25
_
C
54/74HC
Unit
BW
Maximum OnChannel Bandwidth or
Minimum Frequency Response
(Figure 5)
f
in
= 1 MHz Sine Wave
Adjust f
in
Voltage to Obtain 0 dBm at V
OS
Increase f
in
Frequency Until dB Meter Reads 3 dB
R
L
= 50
, C
L
= 10 pF
4.5
9.0
12.0
150
160
160
MHz
--
OffChannel Feedthrough Isolation
(Figure 6)
f
in
Sine Wave
Adjust f
in
Voltage to Obtain 0 dBm at V
IS
f
in
= 10 kHz, R
L
= 600
, C
L
= 50 pF
4.5
9.0
12.0
50
50
50
dB
f
in
= 1.0 MHz, R
L
= 50
, C
L
= 10 pF
4.5
9.0
12.0
40
40
40
--
Feedthrough Noise, Control to
Switch
(Figure 7)
V
in
v
1 MHz Square Wave (t
r
= t
f
= 6 ns)
Adjust R
L
at Setup so that I
S
= 0 A
R
L
= 600
, C
L
= 50 pF
4.5
9.0
12.0
60
130
200
mV
PP
R
L
= 10 k
, C
L
= 10 pF
4.5
9.0
12.0
30
65
100
--
Crosstalk Between Any Two Switches
(Figure 12)
f
in
Sine Wave
Adjust f
in
Voltage to Obtain 0 dBm at V
IS
f
in
= 10 kHz, R
L
= 600
, C
L
= 50 pF
4.5
9.0
12.0
70
70
70
dB
f
in
= 1.0 MHz, R
L
= 50
, C
L
= 10 pF
4.5
9.0
12.0
80
80
80
THD
Total Harmonic Distortion
(Figure 14)
f
in
= 1 kHz, R
L
= 10 k
, C
L
= 50 pF
THD = THD
Measured
THD
Source
V
IS
= 4.0 V
PP
sine wave
V
IS
= 8.0 V
PP
sine wave
V
IS
= 11.0 V
PP
sine wave
4.5
9.0
12.0
0.10
0.06
0.04
%
* Guaranteed limits not tested. Determined by design and verified by qualification.
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