Semiconductor Components Industries, LLC, 2001
November, 2001 Rev. 3
1
Publication Order Number:
MJD31/D
MJD31, MJD31C (NPN),
MJD32, MJD32C (PNP)
MJD31C and MJD32C are Preferred Devices
Complementary Power
Transistors
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching
applications.
Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
Straight Lead Version in Plastic Sleeves ("1" Suffix)
Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix)
Electrically Similar to Popular TIP31 and TIP32 Series
MAXIMUM RATINGS
Rating
Symbol
MJD31
MJD32
MJD31C
MJD32C
Unit
CollectorEmitter Voltage
V
CEO
40
100
Vdc
CollectorBase Voltage
V
CB
40
100
Vdc
EmitterBase Voltage
V
EB
5
Vdc
Collector Current Continuous
Peak
I
C
3
5
Adc
Base Current
I
B
1
Adc
Total Power Dissipation
@ T
C
= 25
_
C
Derate above 25
_
C
P
D
15
0.12
Watts
W/
_
C
Total Power Dissipation (Note 1)
@ T
A
= 25
_
C
Derate above 25
_
C
P
D
1.56
0.012
Watts
W/
_
C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
65 to +150
_
C
1. These ratings are applicable when surface mounted on the minimum pad size
recommended.
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MARKING
DIAGRAMS
DPAK
CASE 369A
STYLE 1
SILICON
POWER TRANSISTORS
3 AMPERES
40 AND 100 VOLTS
15 WATTS
DPAK
STRAIGHT LEADS
CASE 369
STYLE 1
Preferred devices are recommended choices for future use
and best overall value.
MJD3xx
YWW
MJD3xx = Specific Device Code
xx
= 1, 1C, 2 or 2C
Y
= Year
WW
= Work Week
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
1
4
1
4
MJD3xx
YWW
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
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2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
8.3
_
C/W
Thermal Resistance, Junction to Ambient (Note 2)
R
JA
80
_
C/W
Lead Temperature for Soldering Purposes
T
L
260
_
C
2. These ratings are applicable when surface mounted on the minimum pad size recommended.
ELECTRICAL CHARACTERISTICS
(T
C
= 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (Note 3)
(I
C
= 30 mAdc, I
B
= 0)
MJD31, MJD32
MJD31C, MJD32C
V
CEO(sus)
40
100
Vdc
Collector Cutoff Current
(V
CE
= 40 Vdc, I
B
= 0)
MJD31, MJD32
(V
CE
= 60 Vdc, I
B
= 0)
MJD31C, MJD32C
I
CEO
50
Adc
Collector Cutoff Current
(V
CE
= Rated V
CEO
, V
EB
= 0)
ICES
20
Adc
Emitter Cutoff Current
(V
BE
= 5 Vdc, I
C
= 0)
I
EBO
1
mAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(I
C
= 1 Adc, V
CE
= 4 Vdc)
(I
C
= 3 Adc, V
CE
= 4 Vdc)
h
FE
25
10
50
CollectorEmitter Saturation Voltage
(I
C
= 3 Adc, I
B
= 375 mAdc)
V
CE(sat)
1.2
Vdc
BaseEmitter On Voltage
(I
C
= 3 Adc, V
CE
= 4 Vdc)
V
BE(on)
1.8
Vdc
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product (Note 4)
(I
C
= 500 mAdc, V
CE
= 10 Vdc, f
test
= 1 MHz)
f
T
3
MHz
SmallSignal Current Gain
(I
C
= 0.5 Adc, V
CE
= 10 Vdc, f = 1 kHz)
h
fe
20
3. Pulse Test: Pulse Width
v
300
s, Duty Cycle
v
2%.
4. f
T
=
h
fe
f
test
.
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
http://onsemi.com
3
0.03
I
C
, COLLECTOR CURRENT (AMPS)
5
0.07
0.3
3
70
30
300
h FE
, DC CURRENT
GAIN
V
CE
= 2 V
T
J
= 150
C
100
0.1
0.7
25
C
-55
C
50
0.05
0.5
1
25
25
Figure 1. Power Derating
T, TEMPERATURE (
C)
0
50
75
100
125
150
20
15
10
5
P D
, POWER DISSIP
A
TION (W
A
TTS)
Figure 2. Switching Time Test Circuit
Figure 3. DC Current Gain
3
0.03
I
C
, COLLECTOR CURRENT (AMPS)
0.03
0.05 0.07 0.1
0.2
0.5 0.7
3
I
B1
= I
B2
I
C
/I
B
= 10
t
s
= t
s
- 1/8 t
f
T
J
= 25
C
t, TIME
(s)
0.3
2
1
0.7
0.5
0.3
t
s
0.2
0.1
0.07
0.05
1
2
Figure 4. TurnOn Time
2
I
C
, COLLECTOR CURRENT (AMPS)
0.02
I
C
/I
B
= 10
T
J
= 25
C
t, TIME
(s)
1
0.7
0.5
0.3
0.1
0.07
0.05
0.03
0.003
Figure 5. "On" Voltages
I
C
, COLLECTOR CURRENT (AMPS)
1
0.8
V
,
VOL
T
AGE (VOL
TS)
1.4
1.2
0.4
0
+11 V
25
s
0
-9 V
R
B
-4 V
D
1
SCOPE
V
CC
+30 V
R
C
t
r
, t
f
10 ns
DUTY CYCLE = 1%
51
R
B
and R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE I
B
100 mA
MSD6100 USED BELOW I
B
100 mA
REVERSE ALL POLARITIES FOR PNP.
500
7
10
0.03
0.07
0.3
3
0.1
0.7
0.05
0.5
1
t
r
@ V
CC
= 30 V
t
r
@ V
CC
= 10 V
t
d
@ V
BE(off)
= 2 V
0.6
0.2
0.005 0.01 0.02 0.03 0.05 0.1
0.2 0.3 0.5
1
2 3
T
J
= 25
C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 2 V
V
CE(sat)
@ I
C
/I
B
= 10
t
f
@ V
CC
= 30 V
t
f
@ V
CC
= 10 V
2.5
0
2
1.5
1
0.5
T
A
T
C
Figure 6. TurnOff Time
T
A
(SURFACE MOUNT)
T
C
TYPICAL CHARACTERISTICS
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
http://onsemi.com
4
V CE
, COLLECT
OR-EMITTER VOL
T
AGE (VOL
TS)
5
I
B
, BASE CURRENT (mA)
10
20
1.2
0.4
0
50
100 200
500
2
0.8
T
J
= 25
C
1.6
2
1
I
C
= 0.3 A
1000
Figure 7. Collector Saturation Region
300
V
R
, REVERSE VOLTAGE (VOLTS)
CAP
ACIT
ANCE (pF)
C
eb
0.1
200
100
0.5
1
10
40
T
J
= +25
C
t, TIME (ms)
1
0.01
1 k
0.3
0.2
0.07
r(t)
,
TRANSIENT
THERMAL
RESIST
ANCE (NORMALIZED)
R
JC(t)
= r(t) R
JC
R
JC
= 8.33
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
JC(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
SINGLE PULSE
0.01
Figure 8. Capacitance
0.7
D = 0.5
Figure 9. Thermal Response
1 A
3 A
70
50
30
0.2 0.3
2 3
5
20 30
C
cb
0.5
0.1
0.05
0.03
0.02
0.02 0.03 0.05
0.1
0.2 0.3
0.5
1
2
3
5
10
20 30
50
100
200 300 500
0.2
0.1
0.05
0.01
I C
, COLLECT
OR CURRENT
(AMPS)
10
1.5
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.01
3
150
1
0.3
0.2
3
0.05
0.03
WIRE BOND LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
5
7
20
70
10
T
C
= 25
C SINGLE PULSE
T
J
= 150
C
100
s
1 ms
dc
2
0.02
0.1
0.5
2
5
Figure 10. Active Region Safe Operating Area
50
30
100
CURVES APPLY BELOW RATED V
CEO
500
s
MJD31, MJD32
MJD31C, MJD32C
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 10 is based on T
J(pk)
= 150
_C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
v 150_C. T
J(pk)
may be calculated from the data in
Figure 9. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
http://onsemi.com
5
MINIMUM PAD SIZES RECOMMENDED FOR SURFACE MOUNTED APPLICATIONS
0.243 6.172
0.063 1.6
0.1
18
3.0
0.100 2.54
0.165 4.191
0.190 4.826
inches
mm
ORDERING INFORMATION
Device
Package
Shipping
MJD31C
DPAK
75 Units / Rail
MJD31CRL
DPAK
1800 Tape & Reel
MJD31CT4
DPAK
2500 Tape & Reel
MJD31C1
DPAK Straight Leads
75 Units / Rail
MJD31T4
DPAK
2500 Tape & Reel
MJD32C
DPAK
75 Units / Rail
MJD32CRL
DPAK
1800 Tape & Reel
MJD32CT4
DPAK
2500 Tape & Reel
MJD32C1
DPAK Straight Leads
75 Units / Rail
MJD32RL
DPAK
1800 Tape & Reel
MJD32T4
DPAK
2500 Tape & Reel
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