Semiconductor Components Industries, LLC, 2004
August, 2004 - Rev. 6
1
Publication Order Number:
MJD44H11/D
MJD44H11 (NPN)
MJD45H11 (PNP)
Preferred Device
Complementary Power
Transistors
DPAK For Surface Mount Applications
Designed for general purpose power and switching such as output or
driver stages in applications such as switching regulators, converters,
and power amplifiers.
Features
Pb-Free Packages are Available
Lead Formed for Surface Mount Application in Plastic Sleeves
(No Suffix)
Straight Lead Version in Plastic Sleeves ("-1" Suffix)
Lead Formed Version in 16 mm Tape and Reel for Surface Mount
("T4" Suffix)
Electrically Similar to Popular D44H/D45H Series
Low Collector Emitter Saturation Voltage -
V
CE(sat)
= 1.0 Volt Max @ 8.0 Amperes
Fast Switching Speeds
Complementary Pairs Simplifies Designs
Epoxy Meets UL 94, V-0 @ 0.125 in
ESD Ratings: Human Body Model, 3B
u 8000 V
Machine Model, C
u 400 V
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
V
CEO
80
Vdc
Emitter-Base Voltage
V
EB
5
Vdc
Collector Current - Continuous
Peak
I
C
8
16
Adc
Total Power Dissipation @ T
C
= 25
C
Derate above 25
C
P
D
20
0.16
W
W/
C
Total Power Dissipation* @ T
A
= 25
C
Derate above 25
C
P
D
1.75
0.014
W
W/
C
Operating and Storage Junction Temperature
Range
T
J
, T
stg
- 55 to
+ 150
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction-to-Case
R
q
JC
6.25
C/W
Thermal Resistance, Junction-to-Ambient*
R
q
JA
71.4
C/W
Lead Temperature for Soldering
T
L
260
C
*These ratings are applicable when surface mounted on the minimum pad sizes
recommended.
SILICON
POWER TRANSISTORS
8 AMPERES
80 VOLTS
20 WATTS
DPAK-3
CASE 369D
STYLE 1
DPAK
CASE 369C
STYLE 1
MARKING
DIAGRAMS
Preferred devices are recommended choices for future use
and best overall value.
Y
= Year
WW
= Work Week
x
= 4 or 5
1 2
3
4
YWW
J4
xH11
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
1
2
3
4
YWW
J4
xH11
http://onsemi.com
MJD44H11 (NPN) MJD45H11 (PNP)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
C
= 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
(I
C
= 30 mA, I
B
= 0)
V
CEO(sus)
80
-
-
Vdc
Collector Cutoff Current
(V
CE
= Rated V
CEO
, V
BE
= 0)
I
CES
-
-
10
m
A
Emitter Cutoff Current
(V
EB
= 5 Vdc)
I
EBO
-
-
50
m
A
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage
(I
C
= 8 Adc, I
B
= 0.4 Adc)
V
CE(sat)
-
-
1
Vdc
Base-Emitter Saturation Voltage
(I
C
= 8 Adc, I
B
= 0.8 Adc)
V
BE(sat)
-
-
1.5
Vdc
DC Current Gain
(V
CE
= 1 Vdc, I
C
= 2 Adc)
h
FE
60
-
-
-
DC Current Gain
(V
CE
= 1 Vdc, I
C
= 4 Adc)
40
-
-
DYNAMIC CHARACTERISTICS
Collector Capacitance
(V
CB
= 10 Vdc, f
test
= 1 MHz)
MJD44H11
MJD45H11
C
cb
-
-
130
230
-
-
pF
Gain Bandwidth Product
(I
C
= 0.5 Adc, V
CE
= 10 Vdc, f = 20 MHz)
MJD44H11
MJD45H11
f
T
-
-
50
40
-
-
MHz
SWITCHING TIMES
Delay and Rise Times
(I
C
= 5 Adc, I
B1
= 0.5 Adc)
MJD44H11
MJD45H11
t
d
+ t
r
-
-
300
135
-
-
ns
Storage Time
(I
C
= 5 Adc, I
B1
= I
B2
= 0.5 Adc)
MJD44H11
MJD45H11
t
s
-
-
500
500
-
-
ns
Fall Time
(I
C
= 5 Adc, I
B1
= I
B2
= 0.5 Adc)
MJD44H11
MJD45H11
t
f
-
-
140
100
-
-
ns
MJD44H11 (NPN) MJD45H11 (PNP)
http://onsemi.com
3
ORDERING INFORMATION
Device
Package Type
Package
Shipping
MJD44H11
DPAK
369C
75 Units / Rail
MJD44H11-001
DPAK-3
369D
75 Units / Rail
MJD44H11G
DPAK
(Pb-Free)
369C
75 Units / Rail
MJD44H11RL
DPAK
369C
1800 Tape & Reel
MJD44H11T4
DPAK
369C
2500 Tape & Reel
MJD44H11T4G
DPAK
(Pb-Free)
369C
2500 Tape & Reel
MJD44H11T5
DPAK
369C
2500 Tape & Reel
MJD45H11
DPAK
369C
75 Units / Rail
MJD45H11-001
DPAK-3
369D
75 Units / Rail
MJD45H11G
DPAK
(Pb-Free)
369C
75 Units / Rail
MJD45H11RL
DPAK
369C
1800 Tape & Reel
MJD45H11T4
DPAK
369C
2500 Tape & Reel
MJD45H11T4G
DPAK
(Pb-Free)
369C
2500 Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MJD44H11 (NPN) MJD45H11 (PNP)
http://onsemi.com
4
t, TIME (ms)
1
0.01
1 k
0.3
0.2
0.07
r(t)
, EFFECTIVE
TRANSIENT
THERMAL
R
qJC(t)
= r(t) R
qJC
R
qJC
= 6.25
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
q
JC(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.01
RESIST
ANCE (NORMALIZED)
0.7
Figure 1. Thermal Response
0.5
0.1
0.05
0.03
0.02
0.02 0.03 0.05
0.1
0.2 0.3
0.5
1
2
3
5
10
20
30
50
100
200 300
500
0.2
SINGLE PULSE
D = 0.5
0.1
0.02
0.01
0.05
I C
, COLLECT
OR CURRENT
(AMP)
20
1
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.02
3
100
2
0.5
5
0.1
THERMAL LIMIT @ T
C
= 25
C
WIRE BOND LIMIT
5
7
20
70
10
100 ms
dc
0.05
0.3
1
3
10
50
30
Figure 2. Maximum Forward Bias
Safe Operating Area
1 ms
500 ms
5 ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
- V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on T
J(pk)
= 150
_C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
v 150_C. T
J(pk)
may be calculated from the data in
Figure 1. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
25
25
T, TEMPERATURE (
C)
0
50
75
100
125
150
20
15
10
5
P
D
, POWER DISSIP
A
TION (W
A
TTS)
2.5
0
2
1.5
1
0.5
T
A
T
C
Figure 3. Power Derating
T
C
T
A
SURFACE
MOUNT
MJD44H11 (NPN) MJD45H11 (PNP)
http://onsemi.com
5
I
C
, COLLECTOR CURRENT (AMPS)
I
C
, COLLECTOR CURRENT (AMPS)
I
C
, COLLECTOR CURRENT (AMPS)
h FE
, DC CURRENT
GAIN
V
CE
= 4 V
T
J
= 125
C
25
C
-40
C
1000
0.1
Figure 4. MJD44H11 DC Current Gain
10
1
10
100
Figure 5. MJD45H11 DC Current Gain
Figure 6. MJD44H11 Current Gain
versus Temperature
Figure 7. MJD45H11 Current Gain
versus Temperature
I
C
/I
B
= 10
T
J
= 25
C
0.1
Figure 8. MJD44H11 On-Voltages
I
C
, COLLECTOR CURRENT (AMPS)
1
0.8
SA
TURA
TION VOL
T
AGE (VOL
TS)
1.2
0.4
0
0.6
0.2
1
10
T
J
= 25
C
Figure 9. MJD45H11 On-Voltages
V
CE
= 1 V
I
C
/I
B
= 10
T
J
= 25
C
0.1
I
C
, COLLECTOR CURRENT (AMPS)
1
0.8
SA
TURA
TION VOL
T
AGE (VOL
TS)
1.2
0.4
0
0.6
0.2
1
10
h FE
, DC CURRENT
GAIN
1000
0.1
10
1
10
100
V
CE
= 1 V
I
C
, COLLECTOR CURRENT (AMPS)
h FE
, DC CURRENT
GAIN
V
CE
= 4 V
1000
0.1
10
1
10
100
T
J
= 25
C
1 V
T
J
= 125
C
25
C
-40
C
h FE
, DC CURRENT
GAIN
1000
0.1
10
1
10
100
V
CE
= 1 V
V
BE(sat)
V
CE(sat)
V
BE(sat)
V
CE(sat)
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