Semiconductor Components Industries, LLC, 2004
February, 2004 - Rev. 5
1
Publication Order Number:
MMBT3904LT1/D
MMBT3904LT1
Preferred Device
General Purpose Transistor
NPN Silicon
Features
Pb-Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector - Emitter Voltage
V
CEO
40
Vdc
Collector - Base Voltage
V
CBO
60
Vdc
Emitter - Base Voltage
V
EBO
6.0
Vdc
Collector Current - Continuous
I
C
200
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR- 5 Board
(Note 1) T
A
= 25
C
Derate above 25
C
P
D
225
1.8
mW
mW/
C
Thermal Resistance Junction to Ambient
R
q
JA
556
C/W
Total Device Dissipation
Alumina Substrate, (Note 2) T
A
= 25
C
Derate above 25
C
P
D
300
2.4
mW
mW/
C
Thermal Resistance Junction-to-Ambient
R
q
JA
417
C/W
Junction and Storage Temperature
T
J
, T
stg
- 55 to
+150
C
1. FR- 5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
COLLECTOR
3
1
BASE
2
EMITTER
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Preferred devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
MMBT3904LT1
SOT-23
3000 / Tape & Reel
MMBT3904LT1G
SOT-23
3000 / Tape & Reel
MMBT3904LT3
SOT-23
10000 / Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
SOT-23 (TO-236)
CASE 318
Style 6
MARKING
DIAGRAM
3
2
1
1AM
1AM
= Specific Device Code
MMBT3904LT3G
SOT-23
10000 / Tape & Reel
MMBT3904LT1
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2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage (I
C
= 1.0 mAdc, I
B
= 0)
V
(BR)CEO
40
-
Vdc
Collector - Base Breakdown Voltage (I
C
= 10
m
Adc, I
E
= 0)
V
(BR)CBO
60
-
Vdc
Emitter - Base Breakdown Voltage (I
E
= 10
m
Adc, I
C
= 0)
V
(BR)EBO
6.0
-
Vdc
Base Cutoff Current (V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
I
BL
-
50
nAdc
Collector Cutoff Current (V
CE
= 30 Vdc, V
EB
= 3.0 Vdc)
I
CEX
-
50
nAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 50 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 1.0 Vdc)
H
FE
40
70
100
60
30
-
-
300
-
-
-
Collector - Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
V
CE(sat)
-
-
0.2
0.3
Vdc
Base - Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
V
BE(sat)
0.65
-
0.85
0.95
Vdc
SMALL-SIGNAL CHARACTERISTICS
Current - Gain - Bandwidth Product (I
C
= 10 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
f
T
300
-
MHz
Output Capacitance (V
CB
= 5.0 Vdc, I
E
= 0, f = 1.0 MHz)
C
obo
-
4.0
pF
Input Capacitance (V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
C
ibo
-
8.0
pF
Input Impedance (V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
h
ie
1.0
10
k ohms
Voltage Feedback Ratio (V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
h
re
0.5
8.0
X 10
- 4
Small - Signal Current Gain (V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
h
fe
100
400
-
Output Admittance (V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
h
oe
1.0
40
m
mhos
Noise Figure (V
CE
= 5.0 Vdc, I
C
= 100
m
Adc, R
S
= 1.0 k ohms, f = 1.0 kHz)
NF
-
5.0
dB
SWITCHING CHARACTERISTICS
Delay Time
(V
CC
= 3.0 Vdc, V
BE
= - 0.5 Vdc,
t
d
-
35
ns
Rise Time
(V
CC
= 3.0 Vdc, V
BE
= - 0.5 Vdc,
I
C
= 10 mAdc, I
B1
= 1.0 mAdc)
t
r
-
35
ns
Storage Time
(V
CC
= 3.0 Vdc,
t
s
-
200
ns
Fall Time
(V
CC
= 3.0 Vdc,
I
C
= 10 mAdc, I
B1
= I
B2
= 1.0 mAdc)
t
f
-
50
ns
3. Pulse Test: Pulse Width
v
300
m
s, Duty Cycle
v
2.0%.
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
+3 V
275
10 k
1N916
C
S
< 4 pF*
+3 V
275
10 k
C
S
< 4 pF*
< 1 ns
-0.5 V
+10.9 V
300 ns
DUTY CYCLE = 2%
< 1 ns
-9.1 V
+10.9 V
DUTY CYCLE = 2%
t
1
0
10 < t
1
< 500 ms
* Total shunt capacitance of test jig and connectors
MMBT3904LT1
http://onsemi.com
3
TYPICAL TRANSIENT CHARACTERISTICS
Figure 3. Capacitance
REVERSE BIAS VOLTAGE (VOLTS)
2.0
3.0
5.0
7.0
10
1.0
0.1
Figure 4. Charge Data
I
C
, COLLECTOR CURRENT (mA)
5000
1.0
V
CC
= 40 V
I
C
/I
B
= 10
Q, CHARGE (pC)
3000
2000
1000
500
300
200
700
100
50
70
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
CAP
ACIT
ANCE (pF)
1.0
2.0 3.0 5.0 7.0 10
20 30 40
0.2 0.3 0.5 0.7
Q
T
Q
A
C
ibo
C
obo
T
J
= 25
C
T
J
= 125
C
Figure 5. Turn -On Time
I
C
, COLLECTOR CURRENT (mA)
70
100
200
300
500
50
Figure 6. Rise Time
I
C
, COLLECTOR CURRENT (mA)
TIME (ns)
1.0
2.0 3.0
10
20
70
5
100
t , RISE
TIME (ns)
Figure 7. Storage Time
I
C
, COLLECTOR CURRENT (mA)
Figure 8. Fall Time
I
C
, COLLECTOR CURRENT (mA)
5.0 7.0
30
50
200
10
30
7
20
70
100
200
300
500
50
1.0
2.0 3.0
10
20
70
5
100
5.0 7.0
30
50
200
10
30
7
20
70
100
200
300
500
50
1.0
2.0 3.0
10
20
70
5
100
5.0 7.0
30
50
200
10
30
7
20
70
100
200
300
500
50
1.0
2.0 3.0
10
20
70
5
100
5.0 7.0
30
50
200
10
30
7
20
r
t , F
ALL
TIME (ns)
f
t , ST
ORAGE
TIME (ns)
s
V
CC
= 40 V
I
C
/I
B
= 10
V
CC
= 40 V
I
B1
= I
B2
I
C
/I
B
= 20
I
C
/I
B
= 10
I
C
/I
B
= 10
t
r
@ V
CC
= 3.0 V
t
d
@ V
OB
= 0 V
40 V
15 V
2.0 V
I
C
/I
B
= 10
I
C
/I
B
= 20
I
C
/I
B
= 10
I
C
/I
B
= 20
t
s
= t
s
-
1
/
8
t
f
I
B1
=
I
B2
MMBT3904LT1
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4
TYPICAL AUDIO SMALL- SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(V
CE
= 5.0 Vdc, T
A
= 25
C, Bandwidth = 1.0 Hz)
Figure 9.
f, FREQUENCY (kHz)
4
6
8
10
12
2
0.1
Figure 10.
R
S
, SOURCE RESISTANCE (k OHMS)
0
NF
, NOISE FIGURE (dB)
1.0
2.0
4.0
10
20
40
0.2
0.4
0
100
4
6
8
10
12
2
14
0.1
1.0
2.0
4.0
10
20
40
0.2
0.4
100
NF
, NOISE FIGURE (dB)
f = 1.0 kHz
I
C
= 1.0 mA
I
C
= 0.5 mA
I
C
= 50 mA
I
C
= 100 mA
SOURCE RESISTANCE = 200 W
I
C
= 1.0 mA
SOURCE RESISTANCE = 200 W
I
C
= 0.5 mA
SOURCE RESISTANCE = 500 W
I
C
= 100 mA
SOURCE RESISTANCE = 1.0 k
I
C
= 50 mA
h PARAMETERS
(V
CE
= 10 Vdc, f = 1.0 kHz, T
A
= 25
C)
Figure 11. Current Gain
I
C
, COLLECTOR CURRENT (mA)
70
100
200
300
50
Figure 12. Output Admittance
I
C
, COLLECTOR CURRENT (mA)
h , CURRENT
GAIN
h , OUTPUT
ADMITT
ANCE ( mhos)
Figure 13. Input Impedance
I
C
, COLLECTOR CURRENT (mA)
Figure 14. Voltage Feedback Ratio
I
C
, COLLECTOR CURRENT (mA)
30
100
50
5
10
20
2.0
3.0
5.0
7.0
10
1.0
0.1
0.2
1.0
2.0
5.0
0.5
10
0.3
0.5
3.0
0.7
2.0
5.0
10
20
1.0
0.2
0.5
oe
h , VOL
T
AGE FEEDBACK RA
TIO (X 10 )
re
h , INPUT
IMPEDANCE (k OHMS)
ie
0.1
0.2
1.0
2.0
5.0
10
0.3
0.5
3.0
0.1
0.2
1.0
2.0
5.0
10
0.3
0.5
3.0
2
1
0.1
0.2
1.0
2.0
5.0
10
0.3
0.5
3.0
fe
m
-4
MMBT3904LT1
http://onsemi.com
5
TYPICAL STATIC CHARACTERISTICS
Figure 15. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
0.3
0.5
0.7
1.0
2.0
0.2
0.1
h , DC CURRENT
GAIN (NORMALIZED)
0.5
2.0
3.0
10
50
70
0.2
0.3
0.1
100
1.0
0.7
200
30
20
5.0
7.0
FE
V
CE
= 1.0 V
T
J
= +125
C
+25
C
-55
C
Figure 16. Collector Saturation Region
I
B
, BASE CURRENT (mA)
0.4
0.6
0.8
1.0
0.2
0.1
V , COLLECT
OR EMITTER VOL
T
AGE (VOL
TS)
0.5
2.0
3.0
10
0.2
0.3
0
1.0
0.7
5.0
7.0
CE
I
C
= 1.0 mA
T
J
= 25
C
0.07
0.05
0.03
0.02
0.01
10 mA
30 mA
100 mA
Figure 17. "ON" Voltages
I
C
, COLLECTOR CURRENT (mA)
0.4
0.6
0.8
1.0
1.2
0.2
Figure 18. Temperature Coefficients
I
C
, COLLECTOR CURRENT (mA)
V
,
VOL
T
AGE (VOL
TS)
1.0
2.0
5.0
10
20
50
0
100
-0.5
0
0.5
1.0
0
60
80
120
140
160
180
20
40
100
COEFFICIENT
(mV/ C)
200
-1.0
-1.5
-2.0
200
T
J
= 25
C
V
BE(sat)
@ I
C
/I
B
=10
V
CE(sat)
@ I
C
/I
B
=10
V
BE
@ V
CE
=1.0 V
+25
C TO +125
C
-55
C TO +25
C
+25
C TO +125
C
-55
C TO +25
C
q
VC
FOR V
CE(sat)
q
VB
FOR V
BE(sat)
MMBT3904LT1
http://onsemi.com
6
PACKAGE DIMENSIONS
SOT-23 (TO-236)
CASE 318-08
ISSUE AH
D
J
K
L
A
C
B S
H
G
V
3
1
2
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
0.1102
0.1197
2.80
3.04
INCHES
B 0.0472 0.0551
1.20
1.40
C 0.0350 0.0440
0.89
1.11
D 0.0150 0.0200
0.37
0.50
G 0.0701 0.0807
1.78
2.04
H 0.0005 0.0040
0.013
0.100
J 0.0034 0.0070
0.085
0.177
K 0.0140 0.0285
0.35
0.69
L 0.0350 0.0401
0.89
1.02
S 0.0830 0.1039
2.10
2.64
V 0.0177 0.0236
0.45
0.60
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 318-03 AND -07 OBSOLETE, NEW STANDARD
318-08.
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
mm
inches
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
Figure 19. SOT-23
2.0
0.079
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
"Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
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associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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MMBT3904LT1/D
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